JPS6154255B2 - - Google Patents
Info
- Publication number
- JPS6154255B2 JPS6154255B2 JP10099179A JP10099179A JPS6154255B2 JP S6154255 B2 JPS6154255 B2 JP S6154255B2 JP 10099179 A JP10099179 A JP 10099179A JP 10099179 A JP10099179 A JP 10099179A JP S6154255 B2 JPS6154255 B2 JP S6154255B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- polycrystalline
- insulating film
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 58
- 239000012535 impurity Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10099179A JPS5624948A (en) | 1979-08-07 | 1979-08-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10099179A JPS5624948A (en) | 1979-08-07 | 1979-08-07 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5624948A JPS5624948A (en) | 1981-03-10 |
| JPS6154255B2 true JPS6154255B2 (enrdf_load_stackoverflow) | 1986-11-21 |
Family
ID=14288766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10099179A Granted JPS5624948A (en) | 1979-08-07 | 1979-08-07 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5624948A (enrdf_load_stackoverflow) |
-
1979
- 1979-08-07 JP JP10099179A patent/JPS5624948A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5624948A (en) | 1981-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5296391A (en) | Method of manufacturing a bipolar transistor having thin base region | |
| KR0180325B1 (ko) | 얇은 베이스영역에 누설전류가 흐르지 않는 바이폴라 트랜지스터를 갖는 반도체장치 및 그 제조방법 | |
| US4504332A (en) | Method of making a bipolar transistor | |
| US4892837A (en) | Method for manufacturing semiconductor integrated circuit device | |
| JP2746225B2 (ja) | 半導体装置及びその製造方法 | |
| JPS6252963A (ja) | バイポ−ラトランジスタの製造方法 | |
| JP2924417B2 (ja) | 半導体装置 | |
| US5614425A (en) | Method of fabricating a bipolar transistor operable at high speed | |
| JPH04314350A (ja) | 半導体集積回路装置の製造方法 | |
| JP2565162B2 (ja) | バイポ−ラトランジスタおよびその製造方法 | |
| JPS6154255B2 (enrdf_load_stackoverflow) | ||
| JPS6095969A (ja) | 半導体集積回路の製造方法 | |
| JPS6154256B2 (enrdf_load_stackoverflow) | ||
| KR850001439B1 (ko) | 에피택셜 성장기술에 의한 메사트랜지스터의 제작방법 | |
| KR930000325B1 (ko) | 트랜지스터 및 그 제조방법 | |
| JPH03131037A (ja) | 半導体装置の製造方法 | |
| JPH04348037A (ja) | 半導体装置とその製造方法 | |
| JPH01253272A (ja) | バイポーラトランジスタ | |
| JPH0136709B2 (enrdf_load_stackoverflow) | ||
| JPH027438A (ja) | 半導体装置の製造方法 | |
| JPH0786301A (ja) | バイポーラトランジスタの製造方法 | |
| JPH0228267B2 (enrdf_load_stackoverflow) | ||
| JPH01214166A (ja) | バイポーラトランジスタを有する半導体集積回路装置 | |
| JPS639150A (ja) | 半導体装置の製造方法 | |
| JPS60137036A (ja) | 半導体集積回路の製造方法 |