JPS6152232B2 - - Google Patents
Info
- Publication number
- JPS6152232B2 JPS6152232B2 JP6751784A JP6751784A JPS6152232B2 JP S6152232 B2 JPS6152232 B2 JP S6152232B2 JP 6751784 A JP6751784 A JP 6751784A JP 6751784 A JP6751784 A JP 6751784A JP S6152232 B2 JPS6152232 B2 JP S6152232B2
- Authority
- JP
- Japan
- Prior art keywords
- opening
- container
- reaction vessel
- ultraviolet
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 15
- 238000001020 plasma etching Methods 0.000 claims description 14
- 238000006552 photochemical reaction Methods 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6751784A JPS60212224A (ja) | 1984-04-06 | 1984-04-06 | 光化学反応装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6751784A JPS60212224A (ja) | 1984-04-06 | 1984-04-06 | 光化学反応装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60212224A JPS60212224A (ja) | 1985-10-24 |
| JPS6152232B2 true JPS6152232B2 (zh) | 1986-11-12 |
Family
ID=13347249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6751784A Granted JPS60212224A (ja) | 1984-04-06 | 1984-04-06 | 光化学反応装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60212224A (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6428925A (en) * | 1987-07-24 | 1989-01-31 | Semiconductor Energy Lab | Formation of insulating film |
| TW201239131A (en) * | 2011-03-22 | 2012-10-01 | Ind Tech Res Inst | Transmission mechanism and the deposition apparatus using the same |
-
1984
- 1984-04-06 JP JP6751784A patent/JPS60212224A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60212224A (ja) | 1985-10-24 |
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