JPS6250553B2 - - Google Patents
Info
- Publication number
- JPS6250553B2 JPS6250553B2 JP59063411A JP6341184A JPS6250553B2 JP S6250553 B2 JPS6250553 B2 JP S6250553B2 JP 59063411 A JP59063411 A JP 59063411A JP 6341184 A JP6341184 A JP 6341184A JP S6250553 B2 JPS6250553 B2 JP S6250553B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transmission window
- reaction
- reaction vessel
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005540 biological transmission Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 19
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 15
- 238000006552 photochemical reaction Methods 0.000 claims description 15
- 229910052753 mercury Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 206010070834 Sensitisation Diseases 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000002165 photosensitisation Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/488—Protection of windows for introduction of radiation into the coating chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6341184A JPS60209246A (ja) | 1984-04-02 | 1984-04-02 | 光化学反応装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6341184A JPS60209246A (ja) | 1984-04-02 | 1984-04-02 | 光化学反応装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60209246A JPS60209246A (ja) | 1985-10-21 |
| JPS6250553B2 true JPS6250553B2 (zh) | 1987-10-26 |
Family
ID=13228519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6341184A Granted JPS60209246A (ja) | 1984-04-02 | 1984-04-02 | 光化学反応装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60209246A (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2001009C (en) * | 1989-10-19 | 2000-11-28 | Richard S. Adams | Infrared window |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60126822A (ja) * | 1983-12-14 | 1985-07-06 | Toshiba Corp | 光気相成長方法及び光気相成長装置 |
-
1984
- 1984-04-02 JP JP6341184A patent/JPS60209246A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60126822A (ja) * | 1983-12-14 | 1985-07-06 | Toshiba Corp | 光気相成長方法及び光気相成長装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60209246A (ja) | 1985-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6150150B2 (zh) | ||
| JPS6250553B2 (zh) | ||
| JPS60212220A (ja) | 光化学反応装置 | |
| JPS60209248A (ja) | 光化学反応装置 | |
| JPS59207621A (ja) | 薄膜形成方法 | |
| JPS60209247A (ja) | 光化学反応装置 | |
| JPH0372712B2 (zh) | ||
| JPS60212224A (ja) | 光化学反応装置 | |
| JPS6150149B2 (zh) | ||
| JPS6156279A (ja) | 成膜方法 | |
| JPH0334538A (ja) | 光励起反応装置 | |
| JPS6064426A (ja) | 気相反応薄膜形成方法および装置 | |
| JPH0353391B2 (zh) | ||
| JP2629773B2 (ja) | 多層薄膜の形成方法 | |
| JPS6150152B2 (zh) | ||
| JPS6156278A (ja) | 成膜方法 | |
| JPH04365318A (ja) | 表面処理装置 | |
| JPS60219728A (ja) | 堆積膜の形成法 | |
| JPS59145780A (ja) | 光化学蒸着装置 | |
| JPS58193726A (ja) | 蒸着方法 | |
| JPS62284079A (ja) | 光化学的気相堆積装置 | |
| JPS59145779A (ja) | 光化学蒸着装置 | |
| JPS6156281A (ja) | 成膜方法 | |
| JPH0294430A (ja) | 光ｃｖｄ装置 | |
| JPS59129771A (ja) | 光化学蒸着方法 |