JPS6152232B2 - - Google Patents
Info
- Publication number
- JPS6152232B2 JPS6152232B2 JP6751784A JP6751784A JPS6152232B2 JP S6152232 B2 JPS6152232 B2 JP S6152232B2 JP 6751784 A JP6751784 A JP 6751784A JP 6751784 A JP6751784 A JP 6751784A JP S6152232 B2 JPS6152232 B2 JP S6152232B2
- Authority
- JP
- Japan
- Prior art keywords
- opening
- container
- reaction vessel
- ultraviolet
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 15
- 238000001020 plasma etching Methods 0.000 claims description 14
- 238000006552 photochemical reaction Methods 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Description
【発明の詳細な説明】 本発明は光化学反応装置に関するものである。[Detailed description of the invention] The present invention relates to a photochemical reaction device.
最近、電子複写機感光ドラムや太陽電池などに
使用されるアモルフアスシリコンの薄膜の形成方
法が研究されている。また、他方では各種の絶縁
膜や保護膜の形成にも蒸着方法が利用され、用途
によつては種々の蒸着方法が提案されているが、
このなかでも光化学反応を利用した光化学蒸着方
法は被膜形成速度が著しく早く、大面積部にも均
一な被膜を形成できるなどの利点を有し、最近特
に注目を集めている。 Recently, research has been conducted into methods of forming thin films of amorphous silicon used in photosensitive drums of electronic copiers, solar cells, and the like. On the other hand, vapor deposition methods are also used to form various insulating films and protective films, and various vapor deposition methods have been proposed depending on the application.
Among these, the photochemical vapor deposition method, which utilizes photochemical reactions, has been attracting particular attention recently because it has the advantage of being extremely fast in film formation and being able to form a uniform film even over a large area.
従来の光化学反応を利用した化学蒸着ないし堆
積方法は、紫外線をよく透過する窓を有する反応
容器内に基板を配置し、光反応用ガスを流すとと
もに、容器外から、紫外線光源で当該ガスを光化
学反応せしめ、その反応生成物を基板に蒸着又は
堆積せしめるものであつて、前記の大きな利点を
有するが、反面、反応生成物が容器の透過窓にも
蒸着又は堆積してしまい、紫外線の透過を大きく
阻害する欠点があることが分つた。 In conventional chemical vapor deposition or deposition methods that utilize photochemical reactions, a substrate is placed inside a reaction vessel that has a window that allows ultraviolet rays to pass through, and a photoreaction gas is passed through it, and the gas is photochemically exposed to an ultraviolet light source from outside the vessel. This method involves reacting and vapor-depositing or depositing the reaction product on the substrate, and has the above-mentioned great advantages, but on the other hand, the reaction product is also vapor-deposited or deposited on the transparent window of the container, which prevents the transmission of ultraviolet rays. It turns out that there are some major drawbacks.
このため従来は、透過窓に油を塗布したり、ア
ルゴンなどの不活性ガスをフローさせたりして透
過窓に蒸着又は堆積することを抑えていたが、こ
れらの対策では効果が小さく、長時間操業してい
ると紫外線の透過が次第に阻害されていた。 For this reason, in the past, vapor deposition or deposition on the transmission window was suppressed by applying oil to the transmission window or flowing inert gas such as argon, but these measures had little effect and could last for a long time. During operation, the transmission of ultraviolet rays was gradually blocked.
そこで本発明は、透過窓の堆積物を完全に取り
去ることが可能であり、長時間操業しても紫外線
の透過が阻害されることのない光化学反応装置を
提供することを目的とする。そして、この目的
は、光反応性ガスの給排機構を備え、紫外線の透
過部材が装着される開口を有する反応容器と、該
透過部材を介して反応容器内に配置された被処理
物である基板に紫外線を照射する紫外線光源と、
放電機構とエツチングガスの給排機構とを備え、
該透過部材がセツトされる開口を有するプラズマ
エツチング容器とからなり、該反応容器とプラズ
マエツチング容器の両開口間を透過部材が移動可
能としたことを特徴とする光化学反応装置によつ
て達成される。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a photochemical reaction device that can completely remove the deposits on the transmission window and that does not impede the transmission of ultraviolet light even when operated for a long time. The purpose is to provide a reaction vessel equipped with a photoreactive gas supply/discharge mechanism and having an opening into which an ultraviolet ray transmitting member is attached, and an object to be processed placed in the reaction vessel through the transmitting member. an ultraviolet light source that irradiates the substrate with ultraviolet light;
Equipped with a discharge mechanism and an etching gas supply/discharge mechanism,
A photochemical reaction device comprising a plasma etching container having an opening into which the transmission member is set, and the transmission member is movable between the openings of the reaction container and the plasma etching container. .
以下に図面に示す実施例に基いて本発明を具体
的に説明する。 The present invention will be specifically described below based on embodiments shown in the drawings.
反応容器１には光反応性ガスの導入孔１１と、
減圧装置に接続される排気孔１２が設けられ、内
部中央には石英ガラス製の基板支持台１３が上下
動可能に配設されている。反応容器１の上方は解
放されて開口１４が設けられている。この開口１
４の上方には間隙１５を介して灯体２が設置さ
れ、その天井部には反射部材２１を介して紫外線
光源である紫外線ランプ３が複数個並設されてい
る。ここで紫外線ランプ３は管径が18mm、点灯開
始電圧が350V、点灯電圧が90Vで電流が5Aの交
流点灯の低圧水銀灯であるが、これに限られるも
のではなく、無電極型のランプ装置やプラズマ発
生装置でもよく、要は所定量の紫外線を発生させ
るものであればよい。又、必要に応じて、灯体２
内部はガスをフローさせたり、真空にすることが
可能である。 The reaction vessel 1 has a photoreactive gas introduction hole 11,
An exhaust hole 12 connected to a pressure reducing device is provided, and a substrate support stand 13 made of quartz glass is arranged in the center of the interior so as to be movable up and down. The upper part of the reaction vessel 1 is open and provided with an opening 14. This opening 1
A lamp body 2 is installed above the lamp 4 with a gap 15 in between, and a plurality of ultraviolet lamps 3, which are ultraviolet light sources, are arranged in parallel on the ceiling of the lamp body 2 with a reflective member 21 interposed therebetween. Here, the ultraviolet lamp 3 is an AC lighting low-pressure mercury lamp with a tube diameter of 18 mm, a lighting start voltage of 350 V, a lighting voltage of 90 V, and a current of 5 A, but is not limited to this, and may be an electrodeless lamp device or It may be a plasma generator, as long as it generates a predetermined amount of ultraviolet light. Also, if necessary, light body 2
It is possible to allow gas to flow inside or to create a vacuum.
基板支持台１３には図示略の温度調節器が取付
けられており、これに支持される基板９は外径が
160mmのアルミナ板であつて約150℃に加熱されて
いる。なお、この基板支持台１３をターンテーブ
ル状に回転可能としたり、反応容器１内を移動可
能とし、運搬機構で基板９を出し入れして多数の
基板９を効率良く処理できるようにすることがで
きる。導入孔１１からはキヤリアガスのアルゴ
ン、光増感剤の水銀ガス、分解蒸着用ガスの四水
素化珪素からなる混合ガスが反応容器１内に供給
されるが、予め混合すると反応するような光反応
性ガスを使用するときは複数本の導入孔１１を設
けて各ガスを個別に導入し、反応容器１内で混合
するようにするのが良い。そして、この導入孔１
１には温度調節器を設け、各ガスを最適温度に調
整して光化学反応を増進させるのが良い。 A temperature controller (not shown) is attached to the substrate support stand 13, and the substrate 9 supported by this has an outer diameter of
It is a 160mm alumina plate heated to approximately 150℃. Note that this substrate support stand 13 can be made rotatable like a turntable or movable within the reaction vessel 1, so that a large number of substrates 9 can be efficiently processed by loading and unloading the substrates 9 with a transport mechanism. . A mixed gas consisting of argon as a carrier gas, mercury gas as a photosensitizer, and silicon tetrahydride as a decomposition vaporization gas is supplied from the introduction hole 11 into the reaction vessel 1. When using a reactive gas, it is preferable to provide a plurality of introduction holes 11 to introduce each gas individually and mix them within the reaction vessel 1. And this introduction hole 1
1 is preferably equipped with a temperature controller to adjust each gas to an optimal temperature to promote photochemical reactions.
次に、反応容器１から所定距離の位置にプラズ
マエツチング容器４が設置され、下面には、塩素
やフツ素、またはこれらの化合物であるエツチン
グガスの注入孔４１と排出孔４２が設けられてい
る。プラズマエツチング容器４の上方は解放され
て開口４３が形成されているが、この開口４３は
反応容器１の開口１４と同形状であり、かつ同レ
ベルの高さに位置する。更にプラズマエツチング
容器４内には電極５ａ，５ｂが対向して配設さ
れ、これに高周波光源６が接続されて両電極５
ａ，５ｂ間で放電される。そしてこの放電により
エツチングガスがプラズマ状態となり、プラズマ
粒子が周囲に投射される。又、このプラズマ放電
を生じさせる手段としては、無電極でもよく、要
は、プラズマを発生できればよい。 Next, a plasma etching container 4 is installed at a predetermined distance from the reaction container 1, and an injection hole 41 and a discharge hole 42 for an etching gas such as chlorine, fluorine, or a compound thereof are provided on the bottom surface. . The upper part of the plasma etching container 4 is open to form an opening 43, which has the same shape as the opening 14 of the reaction container 1 and is located at the same level. Furthermore, electrodes 5a and 5b are disposed facing each other in the plasma etching container 4, and a high frequency light source 6 is connected to the electrodes 5a and 5b.
Discharge occurs between a and 5b. This discharge turns the etching gas into a plasma state, and plasma particles are projected to the surroundings. Further, the means for generating this plasma discharge may be electrodeless, as long as it can generate plasma.
反応容器１とプラズマエツチング容器４の中間
には回転部材７が立設され、これには石英ガラス
板からなる２枚の紫外線透過部材８ａ，８ｂが
180度間隔で取付けられている。この透過部材の
一方８ａは、回転部材７が回転することにより、
間隙１５を通つて開口１４上で停止、そしてわず
かに回転部材７が降下して開口１４に密着して装
着される。このとき、他方の透過部材８ｂも開口
４３に同時に密着する。もつとも、この透過部材
８ａ，８ｂは上記の様な回転運動に限らず、例え
ば往復運動でもよく、両開口１４，４３間を移動
してこれらに密着して装着できるものであればよ
い。 A rotating member 7 is installed between the reaction vessel 1 and the plasma etching vessel 4, and two ultraviolet transmitting members 8a and 8b made of quartz glass plates are mounted on this rotating member 7.
They are installed at 180 degree intervals. As the rotating member 7 rotates, one of the transparent members 8a
The rotary member 7 passes through the gap 15 and stops on the opening 14, and the rotating member 7 is slightly lowered and installed in close contact with the opening 14. At this time, the other transparent member 8b also comes into close contact with the opening 43 at the same time. However, the transparent members 8a and 8b are not limited to the above-mentioned rotational motion, and may be reciprocated, for example, as long as they can move between the openings 14 and 43 and be attached in close contact therewith.
しかして上記装置において、透過部材８ａが開
口１４に密着した状態で反応容器１内が減圧さ
れ、紫外線ランプ３が点灯される。もつとも、反
応容器１内を減圧せずに常圧下で光化学反応を起
させてもよい。そして、導入孔１１より５mmHg
のアルゴン、３mmHgの四水素化珪素、３×10-3
mmHgの水銀蒸気が導入されるが、紫外線は透過
部材８ａを透過して下方の基板９に照射され、こ
れによつて四水素化珪素が光分解し、アモルフア
スの珪素が基板９の表面に蒸着又は堆積される。
このとき、光反応性ガスの一部分は上昇して透過
部材８ａの方向に進み、ここでも光分解が起つて
生成物が堆積を始める。従つて、紫外線の透過率
が徐々に低下するが、上記の条件で光蒸着した場
合は、一枚の基板９に対する蒸着又は堆積は約30
分以内で完了するが、この時間内では紫外線の透
過率は約70％までしか低下せず、許容範囲内であ
る。次に、蒸着が完了すると基板９が搬出され、
未処理の基板９が搬入されるが、これと同時に回
転部材７が180度回転して透過部材８ａは開口４
３にセツトされ、かつ透過部材８ｂは開口１４に
装着される。そして、反応容器１内は減圧され、
上記と同条件下で再び光蒸着されるが、これと同
時に、プラズマエツチング容器４内には注入孔４
１よりエツチングガスとして0.5mmHgのCF4が注
入される。そして、電極５ａ，５ｂに0.5W／cm2
のパワーが加えられるとCF4がプラズマ状態とな
り、その粒子が透過部材８ａの表面に投射され
る。このため、堆積物はプラズマエツチング作用
により容易に除去されて、透過率は約１分後に
100％近くまで回復する。なお、このプラズマエ
ツチングに要する時間は、基板９上に光蒸着する
に要する時間よりずつと短かく、これらが併行し
て行われるためにこのプラズマエツチングによつ
て１サイクルの時間が長くなることがない。そし
て、反応容器１内での光蒸着が完了すると、再び
回転部材７が回転して、堆積物の除去された透過
部材８ａが開口１４に装着され、以上のサイクル
が繰返される。又、薄膜を堆積中、透過部材の紫
外線透過率が小さくなつた場合、必要に応じて、
８ａと８ｂをサイクルさせる。このため、透過部
材８ａ，８ｂの紫外線透過率は常に許容範囲に保
たれ、良好な状態で光蒸着することができる。 In the above apparatus, the pressure inside the reaction vessel 1 is reduced while the transmission member 8a is in close contact with the opening 14, and the ultraviolet lamp 3 is turned on. However, the photochemical reaction may be caused under normal pressure without reducing the pressure inside the reaction vessel 1. Then, 5mmHg from the introduction hole 11
of argon, 3 mmHg of silicon tetrahydride, 3 x 10 -3
Mercury vapor of mmHg is introduced, and ultraviolet light passes through the transmission member 8a and is irradiated onto the substrate 9 below, whereby silicon tetrahydride is photodecomposed and amorphous silicon is deposited on the surface of the substrate 9. or deposited.
At this time, a portion of the photoreactive gas rises and travels toward the transmission member 8a, where photolysis also occurs and products begin to accumulate. Therefore, the transmittance of ultraviolet rays gradually decreases, but when optical evaporation is performed under the above conditions, the evaporation or deposition on one substrate 9 is approximately 30 minutes.
It takes less than a minute, but within this time, the UV transmittance only decreases to about 70%, which is within an acceptable range. Next, when the vapor deposition is completed, the substrate 9 is carried out,
An unprocessed substrate 9 is carried in, and at the same time, the rotating member 7 rotates 180 degrees, and the transparent member 8a opens into the opening 4.
3, and the transparent member 8b is attached to the opening 14. Then, the pressure inside the reaction vessel 1 is reduced,
Photo-evaporation is carried out again under the same conditions as above, but at the same time, an injection hole 4 is formed in the plasma etching container 4.
From step 1, 0.5 mmHg of CF 4 is injected as an etching gas. Then, 0.5W/cm 2 was applied to the electrodes 5a and 5b.
When the power is applied, CF 4 becomes a plasma state, and its particles are projected onto the surface of the transmission member 8a. Therefore, the deposits are easily removed by the plasma etching action, and the transmittance decreases after about 1 minute.
Recovers to nearly 100%. Note that the time required for this plasma etching is much shorter than the time required for photo-evaporation on the substrate 9, and since these processes are performed in parallel, the time for one cycle may become longer due to this plasma etching. do not have. When the photo-evaporation within the reaction vessel 1 is completed, the rotating member 7 rotates again, the transparent member 8a from which the deposits have been removed is attached to the opening 14, and the above cycle is repeated. Also, if the ultraviolet transmittance of the transmitting member decreases while depositing the thin film, if necessary,
Cycle 8a and 8b. Therefore, the ultraviolet transmittance of the transmitting members 8a and 8b is always maintained within an allowable range, and photo-evaporation can be performed in good condition.
以上説明したように、本発明は、反応容器とは
別にプラズマエツチング容器を設置し、紫外線透
過部材を両容器の開口間を移動するようにしたの
で、光蒸着と併行して透過部材の堆積物を完全に
除去することができる。従つて本発明によれば、
長時間操業しても紫外線の透過が阻害されること
のない光化学反応装置を提供することが可能とな
る。 As explained above, in the present invention, a plasma etching container is installed separately from a reaction container, and the ultraviolet transmitting member is moved between the openings of both containers, so that the deposits of the transmitting member are removed simultaneously with photoevaporation. can be completely removed. According to the invention, therefore:
It becomes possible to provide a photochemical reaction device in which the transmission of ultraviolet rays is not inhibited even when operated for a long time.
第１図は本発明実施例の断面図、第２図は透過
部材の移動説明図である。
１……反応容器、１４……開口、３……紫外線
ランプ、４……プラズマエツチング容器、４３…
…開口、５ａ，５ｂ……電極、８ａ，８ｂ……透
過部材、９……基板。
FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is an explanatory diagram of movement of a transparent member. DESCRIPTION OF SYMBOLS 1... Reaction container, 14... Opening, 3... Ultraviolet lamp, 4... Plasma etching container, 43...
...Opening, 5a, 5b... Electrode, 8a, 8b... Transmissive member, 9... Substrate.
Claims (1)
過部材が装着される開口を有する反応容器と、該
透過部材を介して反応容器内に配置された被処理
物である基板に紫外線を照射する紫外線光源と、
放電機構とエツチングガスの給排機構とを備え、
該透過部材がセツトされる開口を有するプラズマ
エツチング容器とからなり、該反応容器とプラズ
マエツチング容器の両開口間を透過部材が移動可
能としたことを特徴とする光化学反応装置。1. A reaction vessel equipped with a photoreactive gas supply/discharge mechanism and having an opening into which an ultraviolet ray transmitting member is attached, and irradiating ultraviolet rays onto a substrate, which is an object to be processed, placed in the reaction vessel through the transmitting member. an ultraviolet light source that
Equipped with a discharge mechanism and an etching gas supply/discharge mechanism,
1. A photochemical reaction device comprising a plasma etching container having an opening into which the transmission member is set, the transmission member being movable between the openings of the reaction container and the plasma etching container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6751784A JPS60212224A (en) | 1984-04-06 | 1984-04-06 | Photochemical reaction apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6751784A JPS60212224A (en) | 1984-04-06 | 1984-04-06 | Photochemical reaction apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60212224A JPS60212224A (en) | 1985-10-24 |
| JPS6152232B2 true JPS6152232B2 (en) | 1986-11-12 |
Family
ID=13347249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6751784A Granted JPS60212224A (en) | 1984-04-06 | 1984-04-06 | Photochemical reaction apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60212224A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6428925A (en) * | 1987-07-24 | 1989-01-31 | Semiconductor Energy Lab | Formation of insulating film |
| TW201239131A (en) * | 2011-03-22 | 2012-10-01 | Ind Tech Res Inst | Transmission mechanism and the deposition apparatus using the same |
-
1984
- 1984-04-06 JP JP6751784A patent/JPS60212224A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60212224A (en) | 1985-10-24 |
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