JPS60212220A - Photochemical reaction apparatus - Google Patents

Photochemical reaction apparatus

Info

Publication number
JPS60212220A
JPS60212220A JP6751384A JP6751384A JPS60212220A JP S60212220 A JPS60212220 A JP S60212220A JP 6751384 A JP6751384 A JP 6751384A JP 6751384 A JP6751384 A JP 6751384A JP S60212220 A JPS60212220 A JP S60212220A
Authority
JP
Japan
Prior art keywords
window
reaction vessel
ultraviolet rays
cooling
ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6751384A
Other languages
Japanese (ja)
Inventor
Shinji Sugioka
晋次 杉岡
Shinji Suzuki
信二 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP6751384A priority Critical patent/JPS60212220A/en
Publication of JPS60212220A publication Critical patent/JPS60212220A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488Protection of windows for introduction of radiation into the coating chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps

Abstract

PURPOSE:To prevent ultraviolet rays from receiving the inhibition of transmission by preventing the accumulation of a reaction product to an ultraviolet ray pervious window, by forming the ultraviolet ray pervious window in a reaction vessel from a cooling mechanism or cooling the same in integral manner to the cooling mechanism. CONSTITUTION:Photo-reactive gas is supplied into a reaction vessel having an ultraviolet ray pervious window 14 by gas supply and exhaust mechanisms 11, 12 and a substrate 14 being an article to be treated is irradiated with ultraviolet rays from a light source 3 from the outside of the reaction vessel through the pervious window 14. In this photochemical reaction apparatus, the pervious window 14 is formed of cooling mechanisms 14a, 14b or constituted so as to be integrated with said cooling mechanisms. By this simple structure, no reaction product is accumulated to the ultraviolet ray pervious window and the transmission of ultraviolet rays is not interrupted.

Description

【発明の詳細な説明】 本発明は光化学反応装置に関するものである。[Detailed description of the invention] The present invention relates to a photochemical reaction device.

最近、電子複写機の感光ドラムや太陽電池などに使用さ
れるアモルファスシリコンの薄膜の形成方法が研究され
ている。また、他方では各種の絶縁膜や保護膜の形成に
も蒸着方法が利用され、用途によっては種々の蒸着方法
が提案されているが、このなかでも光化学反応を利用し
た光化学蒸着方法は被膜形成速度が著しく早く、大面積
部にも均一な被膜を形成できるなどの利点を有し、最近
特に注目を集めている。
Recently, research has been conducted into methods for forming thin films of amorphous silicon used in photosensitive drums of electronic copying machines, solar cells, and the like. On the other hand, vapor deposition methods are also used to form various types of insulating films and protective films, and various vapor deposition methods have been proposed depending on the application. It has the advantage of being extremely fast and capable of forming a uniform coating even over a large area, and has recently attracted particular attention.

従来の光化学反応を利用した化学蒸着ないしは堆積方法
は、紫外線をよく透過する窓を有する反応答器内に基板
を配置し、光反応用ガスを流すとともに、容器外から、
紫外線光源で当該ガスを光化学反応せしめ、その反応生
成物を基板に蒸着又は堆積せしめるものであって、前記
の大きな利点を有するが、反面、反応生成物が容器の透
過窓にも蒸着又は堆積してしまい、紫外線の透過を大き
く阻害する欠点があることが分った。
In conventional chemical vapor deposition or deposition methods that utilize photochemical reactions, a substrate is placed inside a reactor that has a window that allows ultraviolet rays to pass through.
This method photochemically reacts the gas with an ultraviolet light source and vaporizes or deposits the reaction product on the substrate, and has the above-mentioned great advantages, but on the other hand, the reaction product also vaporizes or deposits on the transparent window of the container. It has been found that there is a drawback in that it greatly impedes the transmission of ultraviolet rays.

このため従来は、透過窓に油を塗布したり、アルゴンな
どの不活性ガスをフローさせたりして透過窓に蒸着又は
堆積することを抑えていた。しかし油を塗布すると堆積
した反応生成物を除去するのが容易にはなるが堆積する
のを防止する効果は小さく、また、不活性ガス用のノズ
ルを紫外線が線断されないように配置して透過窓に一様
に吹付けるのが困雛であり、これらの対策では十分な効
果を得ることができなかった。
For this reason, in the past, vapor deposition or deposition on the transmission window was suppressed by applying oil to the transmission window or flowing an inert gas such as argon. However, although applying oil makes it easier to remove the accumulated reaction products, it has little effect on preventing the accumulation, and the nozzle for inert gas must be arranged so that the ultraviolet rays are not broken. It is difficult to uniformly spray the windows, and these measures have not been able to achieve sufficient effects.

そこで本発明は、光化学反応が低温下では著しく抑制さ
れることを応用して完成したものであり、簡単な構造で
あって、紫外線透過窓に生成物が堆積せず、紫外線の透
過が阻害されることのない光化学反応装置を提供するこ
とを目的とする。そしてその構成は、紫外線の透過窓を
有する反応容器と、この反応容器内に光反応性ガスを供
給するガス給排機構と、反応容器外より透過窓を通して
被処理物である基板上を照射する紫外線光源とを含む光
化学反応装置であって、該透過窓は冷却機構からなるか
、もしくは冷却機構と一体となったことを特徴とするも
のである。
Therefore, the present invention was completed by applying the fact that photochemical reactions are significantly suppressed at low temperatures, and has a simple structure that prevents products from accumulating on the ultraviolet-transmitting window and inhibits the transmission of ultraviolet rays. The purpose of this invention is to provide a photochemical reaction device that does not cause any damage. The structure consists of a reaction vessel having a window for transmitting ultraviolet rays, a gas supply/exhaust mechanism that supplies a photoreactive gas into the reaction vessel, and a substrate to be processed that is irradiated from outside the reaction vessel through the window. The present invention is a photochemical reaction device including an ultraviolet light source, and the transmission window is comprised of a cooling mechanism or is integrated with the cooling mechanism.

以下に図面に示す実施例に基いて本発明を具体的に説明
する。
The present invention will be specifically described below based on embodiments shown in the drawings.

第1図において反応容器1には光反応性ガスの導入孔1
1と、減圧装置に接続される排気孔12が設けられ、内
部中央には石英ガラス製の基板支持台15が上下動可能
に配置されている。そして、上面は石英ガラスからなる
紫外線の透過窓14が設けられているが、その上部に灯
体2が一体に連設され、その天井部には反射部材21を
介して紫外線光源である紫外線ランプ5が複数個並設さ
れている。ここで紫外線ランプ5は管径が18鴎、点灯
開始電圧が550■、点灯電圧が90Vで電流が5Nの
交流点灯の低圧水銀灯であるが、これに限られるもので
はなく、無電極型のランプ装置やプラズマ発生装置でも
よく、襞は所定量の紫外線を発生させるものであればよ
い。又、必要に応じて、灯体2内部は、ガスをフローさ
せたり真窒にすることが可能である。
In FIG. 1, a reaction vessel 1 has a photoreactive gas introduction hole 1.
1 and an exhaust hole 12 connected to a pressure reducing device, and a substrate support stand 15 made of quartz glass is arranged in the center of the interior so as to be movable up and down. The upper surface is provided with an ultraviolet light transmitting window 14 made of quartz glass, and a lamp body 2 is integrally connected to the upper part of the window 14, and an ultraviolet lamp, which is an ultraviolet light source, is connected to the ceiling through a reflective member 21. 5 are arranged in parallel. Here, the ultraviolet lamp 5 is an AC lighting low-pressure mercury lamp with a tube diameter of 18mm, a lighting start voltage of 550cm, a lighting voltage of 90V, and a current of 5N, but is not limited to this, and is an electrodeless lamp. It may be a device or a plasma generator, and the folds may be of any type as long as they generate a predetermined amount of ultraviolet light. Further, if necessary, the inside of the lamp body 2 can be made to flow with gas or to be filled with nitrogen.

基板支持台13に#−を図示略の温度副節器が取付けら
れており、これに支持される基板4は外径が160mの
アルミナ板であって約150Cに加熱されている。なお
、この基板支持台15をターンテーブル状に回転可能と
したり、反応容器1内を移動可能とし、運搬機構で基板
4を出し入れして多数の基板4を効率良く処理できるよ
うにすることができる。導入孔11からはキャリアガス
のアルゴン、光増感剤の水銀ガス、分解蒸着用ガスの四
水素化珪素からなる混合ガスが反応容器1内に供給され
るが、予め混合すると反応するような元反応性ガスを使
用するときは複数本の導入孔11を設けて各ガスを個別
に導入し、反応容器1内で混合するようにするのが良い
。そして、この導入孔11には温度調節器を設け、各ガ
スを最適温度に調整してた化学反応を増進させるのが良
い。
A sub-temperature regulator (#- not shown) is attached to the substrate support stand 13, and the substrate 4 supported by this is an alumina plate having an outer diameter of 160 m and is heated to about 150C. Note that this substrate support stand 15 can be made rotatable like a turntable or movable within the reaction vessel 1, so that a large number of substrates 4 can be efficiently processed by loading and unloading the substrates 4 with a transport mechanism. . A mixed gas consisting of argon as a carrier gas, mercury gas as a photosensitizer, and silicon tetrahydride as a decomposition vaporization gas is supplied from the introduction hole 11 into the reaction vessel 1. When using reactive gases, it is preferable to provide a plurality of introduction holes 11 to introduce each gas individually and mix them within the reaction vessel 1. It is preferable that a temperature regulator is provided in this introduction hole 11 to enhance the chemical reaction in which each gas is adjusted to an optimum temperature.

次に透過窓14の構成を説明すると、本実施例では透過
窓14は中空の板材からなり、両端には注入口14aと
排出口14bが設けられておシ、その内部を気体や液体
の冷却媒体が通過できるようになっている。従って透過
窓14自体が冷却機構を構成しているが、冷却媒体も紫
外線の透過を阻害しない純水や液体窒素などが選ばれる
。第2図は中空部材が2層になった例を示すが、これは
透過窓14ヲ例えば0層程度まで冷却するには液体窒素
などの冷却媒体を使用しなければならないが、これらの
冷却媒体の使用量は少なくしたい。従って、ランプ6に
近い上層に不凍液を通してランプ6よりの熱を遮断して
下層に流れる液体窒素への熱の伝達を小さくするもので
あり、これによって液体窒素の必要量を少なくするもの
である。更に第5図は、紫外線透過材料からなるパイプ
15を透過窓14の表面に固着したものであり、このパ
イプ15内を同じく紫外線透過性の気体−や液体の冷却
媒体が通過する。従って、冷却機構と透過窓とが一体と
なったものであり、これによって透過窓14が冷却され
る。
Next, the structure of the transmission window 14 will be explained. In this embodiment, the transmission window 14 is made of a hollow plate, and an inlet 14a and an outlet 14b are provided at both ends, and the inside thereof is cooled for gas or liquid. Allows the medium to pass through. Therefore, the transmission window 14 itself constitutes a cooling mechanism, and the cooling medium is selected from pure water, liquid nitrogen, or the like, which does not inhibit the transmission of ultraviolet rays. Figure 2 shows an example in which the hollow member has two layers, but this means that in order to cool the transmission window 14 to about 0 layers, a cooling medium such as liquid nitrogen must be used. I want to use less. Therefore, the antifreeze solution is passed in the upper layer near the lamp 6 to block the heat from the lamp 6 and to reduce the transfer of heat to the liquid nitrogen flowing in the lower layer, thereby reducing the amount of liquid nitrogen required. Further, in FIG. 5, a pipe 15 made of an ultraviolet-transparent material is fixed to the surface of the transmission window 14, and a gas or liquid cooling medium, which is also transparent to ultraviolet light, passes through the pipe 15. Therefore, the cooling mechanism and the transmission window are integrated, and the transmission window 14 is thereby cooled.

しかして上記装置において、反応容器1内が減圧されて
紫外線ランプ6が点灯される。そして、導入孔11より
、5■Hgのアルゴン、3wHgの四水素化珪素、5 
X 10−smHgの水銀蒸気が導入されるが、紫外線
は透過窓14f、透過して基板4に照射され、これによ
って四水素化珪素が光分解し、アモルファスの珪素が基
a4上に蒸着又は堆積される。このとき、光反応性ガス
の一部分は上昇して透過窓14の方向に進むが、透過窓
14が冷却されているのでこの近傍での四水素化珪素の
5を分解が抑制される。ことに冷却媒体に液体窒素など
を使用して透過窓14を一30℃程度まで冷却すればほ
とんど光分解されず、従って長時間操業しても透過窓1
4に堆積せず、くもることがない。
In the above apparatus, the pressure inside the reaction vessel 1 is reduced and the ultraviolet lamp 6 is turned on. Then, from the introduction hole 11, argon of 5■Hg, silicon tetrahydride of 3wHg,
Mercury vapor of be done. At this time, a portion of the photoreactive gas rises and moves toward the transmission window 14, but since the transmission window 14 is cooled, decomposition of silicon tetrahydride 5 in the vicinity is suppressed. In particular, if the transmission window 14 is cooled down to about -30°C using liquid nitrogen or the like as a cooling medium, it will hardly be photodecomposed, so even if it is operated for a long time, the transmission window 14 will remain
4. Does not accumulate and does not become cloudy.

また、冷却水で冷却してもその効果は大きくて、はとん
どくもらないが、仮に少々堆積してもその密着力が弱く
、容易に拭き去ることができる。
Also, cooling with cooling water has a large effect and is not overwhelming, but even if a small amount accumulates, its adhesion is weak and can be easily wiped off.

以上説明したように、本発明は、透過窓が冷却機構から
なるか、もしくは冷却機構と一体となって冷却されるよ
うにしたので、この近傍では光化学反応が抑制され、生
成物が堆積しない。従って、本発明によれば、簡単な構
造でありで、紫外線透過窓に生成物が堆積せず、紫外線
の透過が阻害されることのない光化学反応装置を提供す
ることができる。
As explained above, in the present invention, the transmission window is composed of a cooling mechanism or is cooled integrally with the cooling mechanism, so that photochemical reactions are suppressed in this vicinity, and no products are deposited. Therefore, according to the present invention, it is possible to provide a photochemical reaction device that has a simple structure, does not deposit products on the ultraviolet light transmission window, and does not inhibit the transmission of ultraviolet light.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図、第6図は本発明実施レリの断面図であ
る。 1・・・反応容器 2・・・灯体 6・・・紫外線ラン
グ4・・・基板 14・・・透過窓 15・・・パイプ
出願人 ウシオ電機株式会社 代理人 弁理士 田原寅之助 手続補正書(自発) 昭和59年8月10日 特許庁長官 志賀 学 殿 1、事件の表示 昭和59年 特許 願第 67513号2、発明の名称
 光化学反応装置 3、 補正をする者 事件との関係 特許出願人 代表者湯本犬蔵 4、代理人 氏 名 (8411) 弁理士 1)原 寅之助5、 
補正命令の日付 6、補正により増加する発明の数 ナシ7、補正の対象 明細書の発明の詳細な説明の欄 8、補正の内容 別紙の通り 明細書第7頁13行目の「・・ 点灯される。」の次に
「もっとも、反応容器l内を減圧せずに常圧下で光化学
反応を起させてもよい。」を追加する。 以上
FIGS. 1, 2, and 6 are cross-sectional views of a ray implementing the present invention. 1...Reaction vessel 2...Lamp 6...Ultraviolet rung 4...Substrate 14...Transmission window 15...Pipe applicant Ushio Inc. representative Patent attorney Toranosuke Tahara procedural amendment ( (Voluntary initiative) August 10, 1980 Manabu Shiga, Commissioner of the Patent Office1, Indication of the case 1982 Patent Application No. 675132, Title of the invention Photochemical reaction device 3, Relationship to the person making the amendment case Representative of the patent applicant Inuzou Yumoto 4, Agent Name (8411) Patent Attorney 1) Toranosuke Hara 5,
Date of amendment order 6, Number of inventions to be increased by the amendment N/A 7, Detailed explanation of the invention in the specification subject to amendment 8, Contents of the amendment As shown in the attached sheet, "..." on page 7, line 13 of the specification lights up. "However, the photochemical reaction may be caused under normal pressure without reducing the pressure inside the reaction vessel l." is added. that's all

Claims (1)

【特許請求の範囲】 1、紫外線の透過窓を有する反応容器と、この反応容器
内に光反応性ガスを供給するガス給排機構と、反応容器
外より透過窓を通して被処理物である基板上を照射する
紫外線光源とを含む光化学反応装置であって、該透過窓
は冷却機構からなるか、もしくは冷却機構と一体となっ
たことを特徴とする光化学反応装置。 2、 前記透過窓は中空部材からなり、その内部を紫外
線を透過する冷却媒体が通過するようにしたことを特徴
とする特許請求の範囲第1項記載の光化学反応装1.置
。 己 前記中空部材が多層であることを特徴とする特許請
求の範囲第2項記載の光化学反応装置。 4、前記透過窓の表面に紫外線透過材料からなるパイプ
などの中空部材を固着し、その内部を紫外線を透過する
冷却媒体が通過するようにしたことを特徴とする特許請
求の範囲第1項記載の光化学反応装置。
[Scope of Claims] 1. A reaction vessel having a window for transmitting ultraviolet rays, a gas supply/exhaust mechanism for supplying a photoreactive gas into the reaction vessel, and a gas supply/discharge mechanism for supplying a photoreactive gas into the reaction vessel from outside the reaction vessel through the window for transmitting ultraviolet rays onto a substrate as an object to be processed. 1. A photochemical reaction device comprising: an ultraviolet light source for irradiating ultraviolet light, wherein the transmission window comprises a cooling mechanism or is integrated with the cooling mechanism. 2. The photochemical reaction device according to claim 1, wherein the transmission window is made of a hollow member, through which a cooling medium that transmits ultraviolet rays passes. Place. The photochemical reaction device according to claim 2, wherein the hollow member is multilayered. 4. A hollow member such as a pipe made of an ultraviolet-transmitting material is fixed to the surface of the transparent window, and a cooling medium that transmits ultraviolet rays passes through the inside thereof. photochemical reaction device.
JP6751384A 1984-04-06 1984-04-06 Photochemical reaction apparatus Pending JPS60212220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6751384A JPS60212220A (en) 1984-04-06 1984-04-06 Photochemical reaction apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6751384A JPS60212220A (en) 1984-04-06 1984-04-06 Photochemical reaction apparatus

Publications (1)

Publication Number Publication Date
JPS60212220A true JPS60212220A (en) 1985-10-24

Family

ID=13347134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6751384A Pending JPS60212220A (en) 1984-04-06 1984-04-06 Photochemical reaction apparatus

Country Status (1)

Country Link
JP (1) JPS60212220A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61170573A (en) * 1985-01-23 1986-08-01 Canon Inc Photo cvd device
JPS62127469A (en) * 1985-11-27 1987-06-09 Hitachi Ltd Vapor growth apparatus
JPS63192872A (en) * 1987-02-04 1988-08-10 Nippon Tairan Kk Method for preventing clouding of light incident window in photo vapor growth device
JPS63277769A (en) * 1987-05-08 1988-11-15 Fuji Electric Co Ltd Device for utilizing photochemical reaction
JPH03134171A (en) * 1989-10-19 1991-06-07 Inco Ltd Infrared ray window
JPH08296045A (en) * 1995-04-27 1996-11-12 Hiroshima Nippon Denki Kk Film forming method and device therefor
JP2011041886A (en) * 2009-08-20 2011-03-03 Ushio Inc Ultraviolet irradiation apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4928463U (en) * 1972-06-15 1974-03-11
JPS5630058A (en) * 1979-08-17 1981-03-26 Kawasaki Steel Corp Preventing method for leakage of molten steel through porus brick

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4928463U (en) * 1972-06-15 1974-03-11
JPS5630058A (en) * 1979-08-17 1981-03-26 Kawasaki Steel Corp Preventing method for leakage of molten steel through porus brick

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61170573A (en) * 1985-01-23 1986-08-01 Canon Inc Photo cvd device
JPS62127469A (en) * 1985-11-27 1987-06-09 Hitachi Ltd Vapor growth apparatus
JPH0478717B2 (en) * 1985-11-27 1992-12-11 Hitachi Ltd
JPS63192872A (en) * 1987-02-04 1988-08-10 Nippon Tairan Kk Method for preventing clouding of light incident window in photo vapor growth device
JPS63277769A (en) * 1987-05-08 1988-11-15 Fuji Electric Co Ltd Device for utilizing photochemical reaction
JPH03134171A (en) * 1989-10-19 1991-06-07 Inco Ltd Infrared ray window
JPH08296045A (en) * 1995-04-27 1996-11-12 Hiroshima Nippon Denki Kk Film forming method and device therefor
JP2011041886A (en) * 2009-08-20 2011-03-03 Ushio Inc Ultraviolet irradiation apparatus

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