JPS60212225A - Photochemical reaction apparatus - Google Patents

Photochemical reaction apparatus

Info

Publication number
JPS60212225A
JPS60212225A JP6751884A JP6751884A JPS60212225A JP S60212225 A JPS60212225 A JP S60212225A JP 6751884 A JP6751884 A JP 6751884A JP 6751884 A JP6751884 A JP 6751884A JP S60212225 A JPS60212225 A JP S60212225A
Authority
JP
Japan
Prior art keywords
gas
window
reaction
pervious window
reaction vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6751884A
Other languages
Japanese (ja)
Inventor
Shinji Sugioka
晋次 杉岡
Shinji Suzuki
信二 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP6751884A priority Critical patent/JPS60212225A/en
Publication of JPS60212225A publication Critical patent/JPS60212225A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488Protection of windows for introduction of radiation into the coating chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent ultraviolet rays from being interrupted in its transmission by preventing the accumulation of a reaction product to an ultraviolet ray pervious window, by blowing cooled gas to the inner surface of the ultraviolet ray pervious window. CONSTITUTION:Photo-reaction gas is supplied into a reaction vessel 1 having an ultraviolet ray pervious window 14 by gas supply and exhaust mechanisms 11, 12 and a substrate 14 being an article to be treated is irradiated by an ultraviolet ray source 3 from the outside of the reaction vessel 1 through the pervious window 14 and, further, cooled gas is blown to the inner surface of the pervious window 14 by a gas injection mechanism 5. As a result, photochemical reaction is suppressed in the vicinity of the inner surface of the pervious window 14 by cooling said inner surface and a reaction product is not accumulated to the pervious window 14. By this simple structure, the reaction product is not accumulated to the ultraviolet ray pervious window and the transmission of ultraviolet rays is not interrupted.

Description

【発明の詳細な説明】 本発明は光化学反応装置直に関するものである。[Detailed description of the invention] The present invention relates to a photochemical reaction device.

最近、砥子袂写喘の感光ドラムや太陽框池などに11i
f用をれるアモルファスシリコンの薄膜の形成方法が研
究されている。また、他方では各種の絶縁膜や保Rφ−
の形成にも蒸涜方法が利用され、用途によってはtハ々
の蒸宥方法が提案されているが、このなかでも光化学反
応を利用した光化学蒸着方法は被膜形成速度が著しく早
く、大面#郡にも均一な被膜を形成できるなどの利点を
有し、最近特に注目をg48めている。
Recently, 11i
A method of forming a thin film of amorphous silicon that can be used for f is being researched. On the other hand, various insulating films and
A vaporization method is also used to form a film, and many vaporization methods have been proposed depending on the application, but among these, the photochemical vapor deposition method that uses photochemical reactions has an extremely fast film formation rate and is suitable for large surface # It has the advantage of being able to form a uniform coating even on grains, and has recently attracted particular attention.

従来の光化学反応を利用した化学蒸着ないL堆積方法は
、紫外線をよく透過する窓をMする反応′4″4I内に
基板を配置し1元反応用ガスを流すとともに、容器外か
ら、紫外線光源で当該ガスを光化学反応せしめ、その反
応生成物を基板に蒸着又は堆積せしめるものであって、
前記の大きな利点を有するが、反面、反応生成物が容器
の透過窓にも蒸着又は堆積してし゛老い、紫外線の透過
を大きく阻害する欠点があることが分った。
In the conventional L deposition method using a photochemical reaction and without chemical vapor deposition, the substrate is placed inside a reaction chamber with a window that transmits ultraviolet rays, a single reaction gas is flowed, and an ultraviolet light source is connected from outside the container. The gas is subjected to a photochemical reaction, and the reaction product is evaporated or deposited on the substrate,
It has been found that, although it has the above-mentioned great advantages, on the other hand, it has the disadvantage that the reaction products are also deposited or deposited on the transmission window of the container, causing aging, which greatly impedes the transmission of ultraviolet rays.

このため従来は、透過祥に油を塗布したり、アルゴンな
どの不活性ガスをフローさせたりして透過窓に蒸着又は
堆積することを抑えていたが、これらの対策では効果が
小さく、長時間4IvI業していると紫外線の透過が次
第に阻害されていた。
For this reason, conventional methods have been to apply oil to the transmission window or to flow inert gas such as argon to suppress vapor deposition or accumulation on the transmission window, but these measures have little effect and can last for a long time. When using 4IvI, the transmission of ultraviolet rays was gradually inhibited.

そこで本発明は、光化学反応が低温下では著しく抑制さ
れることを応用して完成【−だものであり、簡単な構造
であって、紫外線透過窓に生成物が堆積せず、紫外柳の
透過が四番されることのない光化学反応装置4を提供す
ることを目的とする。そしてこの目的は、紫外線の透過
窓をゼする反応容器と、この反応容器内に光反応性ガス
を供給するガス給排14構と、反応容器外より透過窓を
曲して被処理物である基板上を照射する紫外線光源と、
該透過向の内面に冷却されたガスを吹き付ける機構とを
含む光化学反応装置によって達成される。
Therefore, the present invention was completed by applying the fact that photochemical reactions are significantly suppressed at low temperatures.It has a simple structure, no products are deposited on the ultraviolet transmitting window, and the ultraviolet light transmits through the window. It is an object of the present invention to provide a photochemical reaction device 4 in which the photochemical reaction device 4 is free from being damaged. The purpose of this is to provide a reaction vessel with a UV transmission window, 14 gas supply/exhaust structures for supplying photoreactive gas into the reaction vessel, and an object to be treated by bending the transmission window from outside the reaction vessel. an ultraviolet light source that irradiates the substrate;
This is achieved by a photochemical reaction device including a mechanism for spraying cooled gas onto the inner surface in the transmission direction.

以下に図面に示す実施例に基いて本発明を具体的に説明
する。
The present invention will be specifically described below based on embodiments shown in the drawings.

反応容器IKは光反応性ガスの導入孔11と、減圧値−
に接続される排気孔12が般けられ、内部中央には石英
ガラス製の基板支持台13が上下動可能に配設されてい
る。そし℃、上面は石英ガラスからなる紫外線の透過窓
14が設けられ【いるが、その上部に灯体2が一体に−
IL股され、その天#部には反射部材21を介1−て紫
外線元押である紫外線ランプ3が複数個並設されている
。ここで紫外線ランプ3は管径が18都、点灯I叩始亀
圧が350 V、点灯亀子が90Vで磁流が5人の交流
点灯の低圧水銀灯であるが、これに限られるものではな
く、無′tjl極型のランプ装置やプラズマ発生装fi
tでもよく、要は所定量の紫外線を発生させるものであ
ればよい。又、必要に応じて灯体2内部はガスをフロー
させたり、真空にすることが可能である。
The reaction vessel IK has a photoreactive gas introduction hole 11 and a reduced pressure value -
An exhaust hole 12 is provided, and a substrate support stand 13 made of quartz glass is disposed at the center of the interior so as to be movable up and down. The upper surface is provided with an ultraviolet ray transmitting window 14 made of quartz glass, and the lamp body 2 is integrally mounted above the window 14.
A plurality of ultraviolet lamps 3, which are sources of ultraviolet light, are arranged in parallel at the top of the lamp with a reflective member 21 interposed therebetween. Here, the ultraviolet lamp 3 is a low-pressure mercury lamp with a tube diameter of 18 mm, a lighting I start pressure of 350 V, a lighting point of 90 V, and a magnetic current of 5 AC lighting, but it is not limited to this. Non-pole type lamp equipment and plasma generation equipment fi
It may be t, and in short, it is sufficient if it generates a predetermined amount of ultraviolet rays. Furthermore, the interior of the lamp body 2 can be made to flow with gas or be evacuated as necessary.

基板支持台13には図示略の温度棚節器が取′付けられ
ており、これに支持される基&4は外径が160龍のア
ルミナ板であって約150℃に加熱されている。なお、
“この基板支持台13をターンテーブル状に回転可能と
したり、反応容器l内を移動可能とし、運搬機構で基板
4を出り入れして多数の基板4を効案良く処理できるよ
うにすることができる。゛導入孔11からはキャリア゛
ガスのアルゴン、光増感剤の水銀ガス、分解蒸着用ガス
の四水素化珪素からなる混合ガスが反応容器l内に供給
されるが、予め混合すると反応するような光反応性ガス
を使用するときは複数本の導入孔11を設けて各ガスを
門別に尋人し、反応容器1内で混合するようにするのが
良い。そして、この導入孔11には温度鯛節器を設け、
各ガスを最適温度に稠幣【−て光化学反応を増准させる
のが良い。
A temperature controller (not shown) is attached to the substrate support stand 13, and the base &4 supported by this is an alumina plate having an outer diameter of 160mm and is heated to about 150°C. In addition,
“This substrate support stand 13 can be made to be rotatable like a turntable or movable within the reaction vessel l, and a large number of substrates 4 can be effectively processed by taking them in and out with a transport mechanism. A mixed gas consisting of argon as a carrier gas, mercury gas as a photosensitizer, and silicon tetrahydride as a decomposition vaporization gas is supplied from the introduction hole 11 into the reaction vessel l. When using a photoreactive gas that reacts, it is preferable to provide a plurality of introduction holes 11 to introduce each gas separately and mix them in the reaction vessel 1. 11 is equipped with a temperature sea bream dish,
It is best to heat each gas to the optimum temperature to enhance the photochemical reaction.

次に、透禍!414直下の周辺部にはパイプ状のガス申
出機構5が配設され、このガス噴出機構5には適数個の
ノズル51が十回今に取付けられている。そして注入孔
52は、図示略の冷却気体供給湊+、47に接時されて
おり、例えば冷却されたアルゴンガスがこれより供給さ
れて、ノズル51よりy*A暮14の内岩面に−(φに
吹き付けられ、これを冷却するようになっている。冷却
ガスはアルゴンガスに限られないが、不活性であり、紫
外線を透過させるものでな、ければならない。
Next, Touka! A pipe-shaped gas supply mechanism 5 is disposed in the periphery immediately below 414, and an appropriate number of nozzles 51 are attached to this gas ejection mechanism 5. The injection hole 52 is connected to a cooling gas supply port 47 (not shown), and for example, cooled argon gas is supplied from the nozzle 51 to the inner rock surface of the y*A bottom 14. (The cooling gas is sprayed onto φ to cool it. The cooling gas is not limited to argon gas, but it must be inert and must not transmit ultraviolet rays.

しかして上記装置において、反応容器1内が減圧されて
紫外線ランプ3が点灯される。そして、ノズル51より
9#度が零下数十度のアルゴンカスが透過窓14に吹き
付けられ、導入孔11より、5 vtx Hgのアルゴ
ン、3間Hgの四水素化珪素、33 XIO龍Hgの水銀蒸気が導入される。紫外線は透過窓
14を透過して基板4に照射され、これによって四水素
化珪素が光分解し、アモルファスの珪素が基板4上に蒸
着又は堆積される。このとき、光反応性ガスの一部分は
上昇して透過窓14の方向に進むが、透過窓14が冷却
されているのでこの近傍での四水素化珪素の光分解が抑
制される。
In the above apparatus, the pressure inside the reaction vessel 1 is reduced and the ultraviolet lamp 3 is turned on. Then, an argon gas having a temperature of 9 degrees below zero is sprayed from the nozzle 51 onto the transmission window 14, and from the introduction hole 11, argon of 5 vtx Hg, silicon tetrahydride of 3 vtx Hg, and mercury vapor of 33 will be introduced. The ultraviolet rays pass through the transmission window 14 and are irradiated onto the substrate 4, whereby silicon tetrahydride is photodecomposed and amorphous silicon is vapor-deposited or deposited on the substrate 4. At this time, a portion of the photoreactive gas rises and moves toward the transmission window 14, but since the transmission window 14 is cooled, photodecomposition of silicon tetrahydride in this vicinity is suppressed.

ことに透過窓14を一30℃8Ifまで冷却す11ば、
p(とんど光分解されず、従って畏時間操業しても透過
袈14に堆積せず、くもることがない。また、透過窓1
4を一30℃までも冷却1.なくとも、例えば10構糧
度でもその効果は大きくて行とんど〈もらないが、仮に
少々j4[してもその密着力が弱く、容易に拭き去るこ
とができる。
In particular, when the transmission window 14 is cooled to -30°C 8If,
p (is hardly photodecomposed and therefore does not accumulate on the transmission window 14 and does not become cloudy even after hours of operation. In addition, the transmission window 1
4. Cool down to -30℃ 1. Even if you don't use it, the effect is great even if you use it for example at 10 degrees, but even if you use it a little, the adhesion will be weak and you can easily wipe it off.

以上説明したように、本発明は、透過窓の内面に冷却ぜ
れたガスを吹き付ける機構を設け、これを冷却するよう
にしたので、この近傍では光化学反応か抑制され、生成
物が堆積しない。従って、不イリl′114によれば、
簡単な(造であって、紫外線透過窓に生成物が堆4tイ
せず、紫−I/L繰の透過が阻害されることのない光化
学反応装「dを提供することができる。
As explained above, in the present invention, a mechanism is provided to blow cooled gas onto the inner surface of the transmission window to cool it, so that photochemical reactions are suppressed in this vicinity and no products are deposited. Therefore, according to Fuiri l'114,
It is possible to provide a photochemical reaction device which is simple in structure, does not deposit products on the ultraviolet transmitting window, and does not inhibit the transmission of the UV-I/L.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は不発811実柿例のKJr而図面ある。 1・・・反応容器 2・・・灯体 3・・・紫外糾ラン
プ4・・・基〜 l4・・・透Aパ 5・・・ガス噴出{爛構 51・・・ノズル出願人 ウ
シオ電機株式会社 代理人 弁理士 田原寅之助 321 手続補正書(自発) 昭和59年8月10日 特許庁長官 志賀 学 殿 1、事件の表示 昭和59年 特許 1第67518号 2 発明の名称 光化学反応装置 3、 補正をする者 事件との関係 特許出願人 代表者湯本犬蔵 4、代理人 ” (s41r)弁理士田原寅之助 5、 補正命令の日付 6 補j[により増加する発明の数 ナシ7、補正の対
象 明細書の発明の詳細な説明の欄 8、補正の内容 別紙の通り 明細書箱7頁3行目の「・−・・点灯される。」の次に
「もっとも、反応容器1内を減王せずに常圧下で光化学
反応を起させてもよい。」を追加する。 以上 手続補正書(自発) 昭和59年8月28日 特許庁長官 志賀 学 殿 1、事件の表示 昭和59年 特許 1第 67518号2、発明の名称
 光化学反応装置 3、 補正をする者 事件との関係 特許出願人 代表者湯本犬蔵 4、代理人 方式 n 別紙の通り 明細書第6貞3行目の「・・・・ 点灯される。」の次
に「もっとも、反応容器1内を減圧せずに常圧下で光化
学反応を起させてもよい。」を追加する。 以上
The drawing is a KJr drawing of the unexploded 811 real persimmon example. 1... Reaction vessel 2... Light body 3... Ultraviolet condensing lamp 4... Group ~ 14... Transparent A panel 5... Gas ejection structure 51... Nozzle applicant Ushio Inc. Agent for Co., Ltd. Patent attorney Toranosuke Tahara 321 Procedural amendment (spontaneous) August 10, 1980 Manabu Shiga, Commissioner of the Patent Office 1, Indication of the case 1981 Patent No. 1 No. 67518 2 Name of the invention Photochemical reaction device 3, Relationship with the case of the person making the amendment Patent applicant representative Inuzo Yumoto 4, agent” (s41r) Patent attorney Toranosuke Tahara 5 Date of amendment order 6 Supplement j [Number of inventions increased due to N/A 7, Specifications subject to amendment Column 8 of the Detailed Description of the Invention of the Book, Contents of the Amendment As shown in the appendix, on page 7 of the specification box, line 3, after "...is lit.", "However, the inside of the reaction vessel 1 must be lightened." The photochemical reaction may be allowed to occur under normal pressure.'' is added. Written amendment to the above procedure (voluntary) August 28, 1980 Manabu Shiga, Commissioner of the Patent Office1, Indication of the case 1982 Patent No. 1 No. 675182, Title of the invention Photochemical reaction device 3, Person making the amendment Related Patent applicant representative Inuzo Yumoto 4, agent method n As shown in the attached document, in the 3rd line of the 6th line of the specification, after ``...'' is followed by ``However, the pressure inside the reaction vessel 1 will not be reduced. may be allowed to undergo a photochemical reaction under normal pressure.'' is added. that's all

Claims (1)

【特許請求の範囲】[Claims] 紫外線の透過竪を・hする反応容器と、この反応容器内
に光反応性ガスを供給するガス給排機構と、反応容器外
より透過窓を通して被処理物である基板上を照射する紫
外線光源と、Ra yrφ窓の内面に冷却されたガスを
吹き付ける機構とを含む光化学反応装置。
A reaction vessel that transmits ultraviolet rays vertically, a gas supply/exhaust mechanism that supplies a photoreactive gas into the reaction vessel, and an ultraviolet light source that irradiates a substrate, which is an object to be processed, from outside the reaction vessel through a transmission window. , a mechanism for spraying cooled gas onto the inner surface of a Rayrφ window.
JP6751884A 1984-04-06 1984-04-06 Photochemical reaction apparatus Pending JPS60212225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6751884A JPS60212225A (en) 1984-04-06 1984-04-06 Photochemical reaction apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6751884A JPS60212225A (en) 1984-04-06 1984-04-06 Photochemical reaction apparatus

Publications (1)

Publication Number Publication Date
JPS60212225A true JPS60212225A (en) 1985-10-24

Family

ID=13347277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6751884A Pending JPS60212225A (en) 1984-04-06 1984-04-06 Photochemical reaction apparatus

Country Status (1)

Country Link
JP (1) JPS60212225A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6220872A (en) * 1985-07-19 1987-01-29 Oak Seisakusho:Kk Optical cvd device
JPH03134171A (en) * 1989-10-19 1991-06-07 Inco Ltd Infrared ray window

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630058A (en) * 1979-08-17 1981-03-26 Kawasaki Steel Corp Preventing method for leakage of molten steel through porus brick

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630058A (en) * 1979-08-17 1981-03-26 Kawasaki Steel Corp Preventing method for leakage of molten steel through porus brick

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6220872A (en) * 1985-07-19 1987-01-29 Oak Seisakusho:Kk Optical cvd device
JPH0246669B2 (en) * 1985-07-19 1990-10-16 Oku Seisakusho Co Ltd
JPH03134171A (en) * 1989-10-19 1991-06-07 Inco Ltd Infrared ray window

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