JPS60212221A - Photochemical reaction apparatus - Google Patents

Photochemical reaction apparatus

Info

Publication number
JPS60212221A
JPS60212221A JP6751484A JP6751484A JPS60212221A JP S60212221 A JPS60212221 A JP S60212221A JP 6751484 A JP6751484 A JP 6751484A JP 6751484 A JP6751484 A JP 6751484A JP S60212221 A JPS60212221 A JP S60212221A
Authority
JP
Japan
Prior art keywords
reaction vessel
window
transmission window
ultraviolet rays
photochemical reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6751484A
Other languages
Japanese (ja)
Inventor
Shinji Sugioka
晋次 杉岡
Shinji Suzuki
信二 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP6751484A priority Critical patent/JPS60212221A/en
Publication of JPS60212221A publication Critical patent/JPS60212221A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488Protection of windows for introduction of radiation into the coating chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent ultraviolet rays from being interrupted in its transmission even in long-time operation, by providing a wiper mechanism for scanning the inner surface of the ultraviolet ray pervious window in a reaction vessel. CONSTITUTION:Photo-reactive gas is supplied into a reaction vessel 1 having an ultraviolet ray pervious window 14 by gas supply and exhaust systems 11, 12 and a substrate 4 being an article to be treated is irradiated by an ultraviolet ray source 3 from the outside of the reaction vessel 1 through the pervious window 14 and, further, the inner surface of the pervious window 14 is scanned by a wiper mechanism 5. Because the reaction product accumulated to the pervious window can be wiped off easily and perfectly by this simple structure, the transmission of ultraviolet rays is not interrupted even in long-time operation.

Description

【発明の詳細な説明】 本発明は光化学反応装置に関するものである。[Detailed description of the invention] The present invention relates to a photochemical reaction device.

最近、電子複写機の感光ドラムや太陽電池などに使用さ
れるアモルファスシリコンの薄膜の形成方法が研究され
ている。また、他方では各樵の絶縁膜や保護膜の形成に
も蒸着方法が利用され、用途によっては種々の蒸着方法
が提案されているが、このなかでも光化学反応を利用し
た光化学蒸着方法は被膜形成速度が著しく早く、大面積
部にも均一な被膜を形成できるなどの利点を有し、最近
特に注目を集めている。
Recently, research has been conducted into methods for forming thin films of amorphous silicon used in photosensitive drums of electronic copying machines, solar cells, and the like. On the other hand, vapor deposition methods are also used to form insulating films and protective films for each woodcutter, and various vapor deposition methods have been proposed depending on the application, among which photochemical vapor deposition methods that utilize photochemical reactions are used to form films. It has the advantage of being extremely fast and being able to form a uniform coating even over a large area, and has recently attracted particular attention.

従来の光化学反応を利用した化学蒸着ないしは堆積方法
は、紫外線をよく透過する窓を有する反応容器内に基板
を配置し、光反応用ガスを流すとともに、容器外から、
紫外線光源で当該ガスを光化学反応せしめ、その反応生
成物を基板に蒸着又は、堆積せしめるものであって、前
記の大きな利点を有するが、反面、反応生成物が容器の
透過窓にも蒸着又は堆積してしまい、紫外線の透過を大
きく阻害する欠点があることが分った。このため従来は
、透過窓に油を塗布したり、アルゴンなどの不活性ガス
をフローさせたりして透過窓に蒸着又は堆積することを
抑えていたが、これらの対策では効果が小さく、長時間
操業していると紫外線の透過が次第に阻害されていた。
In conventional chemical vapor deposition or deposition methods that utilize photochemical reactions, a substrate is placed inside a reaction vessel that has a window that allows ultraviolet rays to pass through.
This method photochemically reacts the gas with an ultraviolet light source and deposits the reaction product on the substrate, and has the above-mentioned great advantages, but on the other hand, the reaction product also deposits or deposits on the transparent window of the container. It has been found that there is a drawback in that it greatly impedes the transmission of ultraviolet rays. For this reason, in the past, vapor deposition or deposition on the transmission window was suppressed by applying oil to the transmission window or flowing inert gas such as argon, but these measures had little effect and could last for a long time. During operation, the transmission of ultraviolet rays was gradually blocked.

そこで本発明は、簡単な溝造であって、透過窓の堆積物
を完全に取り去ることが可能であり、長時間操業しても
紫外線の透過が阻害されることのない光化学反応装置を
提供することを目的とし、この目的は、紫外線の透過窓
を有する反応容器と、この反応容器内に元反応性ガスを
供給するガス給排機構と、反応容器外より透過窓を通し
て被処理物でおる基板上を照射する紫外線光源と、透過
窓の内表面を走査するワイパー機構とを含む光化学反応
装置により達成される。そして、このワイパー機構のブ
レード部をテフロンや不織布、もしくは表面をこれらの
材料で覆われたもので構成すれば払拭効果が向上し、更
には、透過窓の内表面に油が塗布されたり、冷却手段が
設けられて低温にすることが可能でおれば堆積物の密着
度が弱くなり、ワイパー機構による払拭を容易に行うこ
とができる。
SUMMARY OF THE INVENTION Therefore, the present invention provides a photochemical reaction device that has a simple groove structure, can completely remove deposits on the transmission window, and does not inhibit the transmission of ultraviolet light even when operated for a long time. The purpose is to provide a reaction vessel having a window for transmitting ultraviolet rays, a gas supply/exhaust mechanism for supplying the original reactive gas into the reaction vessel, and a substrate to be treated from outside the reaction vessel through the window. This is accomplished by a photochemical reaction device that includes an ultraviolet light source that illuminates the top and a wiper mechanism that scans the inner surface of the transmission window. If the blade part of this wiper mechanism is made of Teflon or non-woven fabric, or the surface is covered with these materials, the wiping effect will be improved. If a means is provided and it is possible to lower the temperature, the adhesion of deposits will be weakened and it can be easily wiped away by a wiper mechanism.

以下に図面に示す実施例に基いて本発明を具体的に説明
する。
The present invention will be specifically described below based on embodiments shown in the drawings.

反応容器1には光反応性ガスの導入孔11と、減圧装置
に接続される排気孔12が設けられ、天井部中央には石
英ガラス製の基板支持具16が配設されている。そして
下面には石英ガラスからなる紫外線の透過窓14が設け
られているが、この透過窓14Fi中空となっており、
注水口14aと排水口14bが設けられて、その内部を
冷却水が通過する。もっとも、この透過窓14は一枚の
石英ガラス板であって、冷却手段が設けられていないも
のでもよい。この透過窓14の下方には灯体2が一体に
連設され、その内部にけ反射部材21を介して紫外線光
源である紫外線ランプ6が複数個並設されており、上方
に向けて紫外線が照射される。ここで紫外線ランプ3は
管径が18酬、点灯開始電、圧が350■、点灯電圧が
90Vで電流が5Aの交流点灯の低圧水銀灯であるが、
これに限られるものではなく、無電極型のう/ブ装置や
プラズマ発生装置でもよく、要は所定量の紫外線を発生
させるものであればよい。又、必要に応じて、灯体2内
部は、ガスの給排機構により、ガスをフローさせたり、
真空にすゐことが可能である。
The reaction vessel 1 is provided with a photoreactive gas introduction hole 11 and an exhaust hole 12 connected to a pressure reducing device, and a substrate support 16 made of quartz glass is provided in the center of the ceiling. A UV transmitting window 14 made of quartz glass is provided on the lower surface, and this transmitting window 14Fi is hollow.
A water inlet 14a and a drain 14b are provided, through which cooling water passes. However, the transmission window 14 may be a single quartz glass plate without cooling means. A lamp body 2 is integrally installed below the transparent window 14, and a plurality of ultraviolet lamps 6, which are ultraviolet light sources, are arranged in parallel inside the lamp body 2 through a reflective member 21, and ultraviolet rays are emitted upward. irradiated. Here, the ultraviolet lamp 3 is an AC lighting low-pressure mercury lamp with a tube diameter of 18 mm, a lighting start voltage and pressure of 350 mm, a lighting voltage of 90 V, and a current of 5 A.
The device is not limited to this, and may be an electrodeless type radiation device or a plasma generator, as long as it generates a predetermined amount of ultraviolet rays. In addition, if necessary, the interior of the lamp body 2 may be configured to allow gas to flow through the gas supply/drainage mechanism.
It is possible to sit in a vacuum.

基板支持具15には図示略の温度調節器が取付けられて
おり、これに支持される基板4は外径が160mのアル
ミナ板であって約150℃に加熱されている。なお、こ
の基板支持具15を回転可能としたシ、反応容器1の天
井面を移動可能とし、運搬機構で基板4を出し入れして
多数の基板4を効率良く処理できるようにすることがで
きる。導入孔11からはキャリアガスのアルゴン、光増
感剤の水銀ガス、分解蒸着用ガスの四水素化珪素からな
る混合ガスが反応容器1内に供給されるが、予め混合す
ると反応するような光反応性ガスを使用するときは複数
本の導入孔11を設けて各ガスを個別に導入し、反応容
器1内で混合するようにするのが良い。そして、この導
入孔11には温度調節器を設け、各カスを最適温度に謂
整して光化学反応を増進させるのが良い。
A temperature regulator (not shown) is attached to the substrate support 15, and the substrate 4 supported by this is an alumina plate having an outer diameter of 160 m and is heated to about 150°C. Note that by making the substrate support 15 rotatable, the ceiling surface of the reaction vessel 1 can be made movable, and a large number of substrates 4 can be efficiently processed by moving the substrates 4 in and out using the transport mechanism. A mixed gas consisting of argon as a carrier gas, mercury gas as a photosensitizer, and silicon tetrahydride as a decomposition vaporization gas is supplied from the introduction hole 11 into the reaction vessel 1. When using reactive gases, it is preferable to provide a plurality of introduction holes 11 to introduce each gas individually and mix them within the reaction vessel 1. It is preferable that a temperature regulator is provided in the introduction hole 11 to adjust the temperature of each dreg to an optimum temperature to promote the photochemical reaction.

次に、透過窓14の上にはワイパー5が設けられており
、透過窓14の内表面を走査する。このワイパー5は、
モータMの回転力がリンクを介して了−ム51に伝えら
れて撮り子式往復運動を行うが、第2図に示すように、
アーム51はメインアーム51aとサブアーム51bと
がパンタク″ラフ式に組まれており、走査面積が大きく
なっている。
Next, a wiper 5 is provided above the transmission window 14 and scans the inner surface of the transmission window 14. This wiper 5 is
The rotational force of the motor M is transmitted to the arm 51 via the link to perform a camera-type reciprocating motion, as shown in FIG.
The arm 51 has a main arm 51a and a sub-arm 51b assembled in a pantograph type, and has a large scanning area.

透過窓14の内表面に接触するブレード52はテフロン
や不織布のように密着性が良く、かつ耐久性の優れた材
料からなっており、走査によって透過窓14のくもりを
払拭できる。
The blade 52 that contacts the inner surface of the transparent window 14 is made of a material with good adhesion and durability, such as Teflon or nonwoven fabric, and can wipe away fog on the transparent window 14 by scanning.

しかして上記装置において、反応容器1内が減圧されて
紫外線ラング5が点灯される。そして、導入孔11より
、5 w laHのアルゴン、5閤Hgの四水素化珪素
、5X10−’m−の水銀蒸気が導入されるが、紫外線
は透過窓14を透過して上方の基板4に照射され、これ
によって四水素化珪素が光分解し、アモルファスの珪素
が基板4の表面に蒸着又は堆積される。このとき、光反
応性ガスの一部分は降下して透過窓14の方向に進み、
ここでも光分解が起って生成物が堆積を始める。しかし
、堆積が起ってくもり始めるとワイパー5が透過窓14
の内表面を走査し、ブレード52によってくもりは完全
に払拭される。ことに透過窓14が冷却されているので
、生成物が堆積してもその密着力が弱く、更には、透過
窓14に油を塗布しておくとその密着力を弱めるのに一
段と効果があり、−回の走査によって容易に、かつ完全
に払拭される。因みに、前記の条件によって光分解させ
ると、透過窓14への堆積速度は1分間に1nm程度で
あり、1 nm程度の堆積によって紫外線透過率は95
%となるが、95チ程度が許容限界である。
In the above apparatus, the pressure inside the reaction vessel 1 is reduced and the ultraviolet lamp 5 is turned on. Then, 5 watts of argon, 5 ton of mercury of silicon tetrahydride, and 5×10 m of mercury vapor are introduced through the introduction hole 11, but the ultraviolet rays pass through the transmission window 14 and reach the substrate 4 above. The silicon tetrahydride is photodecomposed and amorphous silicon is evaporated or deposited on the surface of the substrate 4 . At this time, a portion of the photoreactive gas descends and proceeds in the direction of the transmission window 14,
Here too, photolysis occurs and products begin to accumulate. However, when the accumulation occurs and it starts to become cloudy, the wiper 5 moves to the transmission window 14.
The fog is completely wiped away by the blade 52. In particular, since the transmission window 14 is cooled, even if the product is deposited, its adhesion is weak.Furthermore, applying oil to the transmission window 14 is even more effective in weakening the adhesion. , - times of scanning can be easily and completely wiped out. Incidentally, when photodecomposed under the above conditions, the deposition rate on the transmission window 14 is about 1 nm per minute, and the ultraviolet transmittance is 95% by about 1 nm of deposition.
%, but the permissible limit is about 95 inches.

従って、ワイパー5は1分間に1回、ないしはこれより
は少し商い頻度で間欠的νこ走査させれば十分であり、
このワイパー5の走査によって紫外線が遮断される悪影
譬は非常に小さく、無視することができる。
Therefore, it is sufficient to scan the wiper 5 intermittently once every minute or a little more frequently.
The negative effect of blocking ultraviolet rays due to the scanning of the wiper 5 is very small and can be ignored.

以上説明したように、本発明は、透過窓の内表面を走査
するワイパー機構を設けたので、透過窓に堆積した生成
物を容易に、かつ完全に払拭することが可能であり、本
発明によれば、簡単な構造であって、長時間作動させて
も紫外線の透過が阻害されることのない光化学反応装置
を提供することができる。
As explained above, since the present invention is provided with a wiper mechanism that scans the inner surface of the transmission window, it is possible to easily and completely wipe away the products deposited on the transmission window. Accordingly, it is possible to provide a photochemical reaction device that has a simple structure and does not inhibit the transmission of ultraviolet light even when operated for a long time.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明実施例の断面図、第2図はワイパー機構
の説明図である。 1・・・反応容′6r 6・・・紫外線ランプ4・・・
基板 14・・透過窓 5・・・ワイパー52・・ブレ
ード 出願人 ウシオ電機株式会社 代理人 弁理士 出原寅之助 第1図 第2図 手続補正書(自発) 昭和59年8月10日 特許庁長戦 志賀 学 殿 1 事件の表示 昭和59年 特許 願第67514号 2、発明の名称 光化学反応装置 3、 補正をする者 事件との関係 特8ト「出願人 代表者 湯 本 大 城 4、代理人 ” (8411) 弁理士 1)原 賞之助5 補正命
令の日付 6、 4正により増加する発明の数 ナシ7、補正の対
象 明細書の発明の詳細な説明の欄 8 補正の内容 別紙の通り 明細書第7頁7行目の「・・・・点灯される。」の次に
「もっとも、反応容器1内を減圧せずに常圧下で光化学
反応を起させてもよい。」を追加する。 以上
FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is an explanatory diagram of a wiper mechanism. 1... Reaction volume '6r 6... Ultraviolet lamp 4...
Substrate 14...Transparent window 5...Wiper 52...Blade Applicant USHIO INC. Agent Patent attorney Toranosuke Dehara Figure 1 Figure 2 Procedural amendment (voluntary) August 10, 1980 Commissioner of the Japan Patent Office Sen Shiga Manabu 1 Indication of the case 1982 Patent Application No. 67514 2 Title of the invention Photochemical reaction device 3 Relationship with the amended person case Special 8th Applicant Representative Oshiro Yumoto 4, Agent ” (8411) Patent Attorney 1) Shonosuke Hara 5 Date of amendment order 6 Number of inventions increased due to 4th amendment N/A 7 Column 8 for detailed explanation of the invention in the specification subject to amendment 8 Contents of amendment as attached On page 7, line 7 of the specification, next to "...is lit." add "However, the photochemical reaction may be caused under normal pressure without reducing the pressure inside the reaction vessel 1." . that's all

Claims (1)

【特許請求の範囲】 1、紫外線の透過窓を有する反応容器と、この反応容器
内に光反応性ガスを供給するガス給排機構と、反応容器
外より透過窓を通して被処理物である基板上を照射する
紫外線光源と、透過窓の内表面を走査するワイパー機構
とを含む光化学反応装置。 2、 前記ワイパー機構のブレード部はテフロンもしく
は不織布、もしくはこれらで榎われたものである仁とを
特徴とする特許請求の範囲第1項記載の光化学反応装置
。 己 前記透過窓には冷却手段が設けられたことを特徴と
する特許請求の範囲第1項記載の光化学反応装置。 4、前記透過窓の内表面には油が塗布されたことを特徴
とする特許請求の範囲第1項記載の光化学反応装置。
[Scope of Claims] 1. A reaction vessel having a window for transmitting ultraviolet rays, a gas supply/exhaust mechanism for supplying a photoreactive gas into the reaction vessel, and a gas supply/discharge mechanism for supplying a photoreactive gas into the reaction vessel from outside the reaction vessel through the window for transmitting ultraviolet rays onto a substrate as an object to be processed. A photochemical reaction device that includes an ultraviolet light source that irradiates light, and a wiper mechanism that scans the inner surface of a transmission window. 2. The photochemical reaction device according to claim 1, wherein the blade portion of the wiper mechanism is made of Teflon, a nonwoven fabric, or a material coated with these. 2. The photochemical reaction device according to claim 1, wherein the transmission window is provided with a cooling means. 4. The photochemical reaction device according to claim 1, wherein the inner surface of the transmission window is coated with oil.
JP6751484A 1984-04-06 1984-04-06 Photochemical reaction apparatus Pending JPS60212221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6751484A JPS60212221A (en) 1984-04-06 1984-04-06 Photochemical reaction apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6751484A JPS60212221A (en) 1984-04-06 1984-04-06 Photochemical reaction apparatus

Publications (1)

Publication Number Publication Date
JPS60212221A true JPS60212221A (en) 1985-10-24

Family

ID=13347163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6751484A Pending JPS60212221A (en) 1984-04-06 1984-04-06 Photochemical reaction apparatus

Country Status (1)

Country Link
JP (1) JPS60212221A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03134171A (en) * 1989-10-19 1991-06-07 Inco Ltd Infrared ray window
KR20200110184A (en) * 2019-03-15 2020-09-23 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus and substrate processing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03134171A (en) * 1989-10-19 1991-06-07 Inco Ltd Infrared ray window
KR20200110184A (en) * 2019-03-15 2020-09-23 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus and substrate processing method
US11527404B2 (en) 2019-03-15 2022-12-13 Tokyo Electron Limited Substrate processing apparatus and substrate processing method

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