JPS6151869A - 半導体記憶装置およびその製造方法 - Google Patents

半導体記憶装置およびその製造方法

Info

Publication number
JPS6151869A
JPS6151869A JP59174540A JP17454084A JPS6151869A JP S6151869 A JPS6151869 A JP S6151869A JP 59174540 A JP59174540 A JP 59174540A JP 17454084 A JP17454084 A JP 17454084A JP S6151869 A JPS6151869 A JP S6151869A
Authority
JP
Japan
Prior art keywords
capacitor
patterns
fine
memory device
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59174540A
Other languages
English (en)
Japanese (ja)
Inventor
Katsuhiro Tsukamoto
塚本　克博
Kenji Sugimoto
謙二 杉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59174540A priority Critical patent/JPS6151869A/ja
Priority to DE19853521891 priority patent/DE3521891A1/de
Publication of JPS6151869A publication Critical patent/JPS6151869A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)
JP59174540A 1984-08-20 1984-08-20 半導体記憶装置およびその製造方法 Pending JPS6151869A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59174540A JPS6151869A (ja) 1984-08-20 1984-08-20 半導体記憶装置およびその製造方法
DE19853521891 DE3521891A1 (de) 1984-08-20 1985-06-19 Halbleiterspeichereinrichtung und verfahren zur herstellung derselben

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59174540A JPS6151869A (ja) 1984-08-20 1984-08-20 半導体記憶装置およびその製造方法

Publications (1)

Publication Number Publication Date
JPS6151869A true JPS6151869A (ja) 1986-03-14

Family

ID=15980323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59174540A Pending JPS6151869A (ja) 1984-08-20 1984-08-20 半導体記憶装置およびその製造方法

Country Status (2)

Country Link
JP (1) JPS6151869A (https=)
DE (1) DE3521891A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992005584A1 (de) * 1990-09-13 1992-04-02 Siemens Aktiengesellschaft Hochintegrierbare schaltungsstruktur und herstellungsverfahren dafür
US5204280A (en) * 1992-04-09 1993-04-20 International Business Machines Corporation Process for fabricating multiple pillars inside a dram trench for increased capacitor surface
DE19713052A1 (de) * 1997-03-27 1998-10-01 Siemens Ag Kondensatorstruktur
DE19940825A1 (de) * 1999-08-27 2001-04-05 Infineon Technologies Ag Kondensatorstruktur

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1319011A (fr) * 1961-05-01 1963-02-22 Pacific Semiconductors Traitement de surface du silicium
US3457633A (en) * 1962-12-31 1969-07-29 Ibm Method of making crystal shapes having optically related surfaces
GB1439351A (en) * 1972-06-02 1976-06-16 Texas Instruments Inc Capacitor
US3945825A (en) * 1974-05-22 1976-03-23 Rca Corporation Method for producing width-modulated surface relief patterns
US3894872A (en) * 1974-07-17 1975-07-15 Rca Corp Technique for fabricating high Q MIM capacitors
US4055423A (en) * 1976-04-15 1977-10-25 Rca Corporation Organic medium for thin-phase holography
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
US4403827A (en) * 1980-09-12 1983-09-13 Mcdonnell Douglas Corporation Process for producing a diffraction grating
US4336320A (en) * 1981-03-12 1982-06-22 Honeywell Inc. Process for dielectric stenciled microcircuits
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置
JPS5982761A (ja) * 1982-11-04 1984-05-12 Hitachi Ltd 半導体メモリ
JPS59161860A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 半導体メモリ装置
JPS60113963A (ja) * 1983-11-25 1985-06-20 Toshiba Corp 半導体記憶装置
DE3404673A1 (de) * 1984-02-10 1985-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Photolithographische einrichtung und damit hergestellte magnetische oberflaechenspeicher

Also Published As

Publication number Publication date
DE3521891C2 (https=) 1992-07-30
DE3521891A1 (de) 1986-02-20

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