JPS61502993A - ３ウェルｃｍｏｓ技術 - Google Patents

３ウェルｃｍｏｓ技術

Info

Publication number
JPS61502993A
JPS61502993A JP60502457A JP50245785A JPS61502993A JP S61502993 A JPS61502993 A JP S61502993A JP 60502457 A JP60502457 A JP 60502457A JP 50245785 A JP50245785 A JP 50245785A JP S61502993 A JPS61502993 A JP S61502993A
Authority
JP
Japan
Prior art keywords
well
forming
base layer
conductivity type
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60502457A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0560665B2 (enExample
Inventor
ジヨイ、リチヤード・シー
バートラ、タルサイム・ラル
Original Assignee
アメリカン・マイクロシステムズ・インコ−ポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アメリカン・マイクロシステムズ・インコ−ポレイテッド filed Critical アメリカン・マイクロシステムズ・インコ−ポレイテッド
Publication of JPS61502993A publication Critical patent/JPS61502993A/ja
Publication of JPH0560665B2 publication Critical patent/JPH0560665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
JP60502457A 1984-05-25 1985-05-22 ３ウェルｃｍｏｓ技術 Granted JPS61502993A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61441884A 1984-05-25 1984-05-25
US614418 1984-05-25

Publications (2)

Publication Number Publication Date
JPS61502993A true JPS61502993A (ja) 1986-12-18
JPH0560665B2 JPH0560665B2 (enExample) 1993-09-02

Family

ID=24461177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60502457A Granted JPS61502993A (ja) 1984-05-25 1985-05-22 ３ウェルｃｍｏｓ技術

Country Status (4)

Country Link
EP (1) EP0182876B1 (enExample)
JP (1) JPS61502993A (enExample)
DE (1) DE3580247D1 (enExample)
WO (1) WO1985005736A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7405460B2 (en) 2003-03-20 2008-07-29 Ricoh Company, Ltd. Semiconductor device having a plurality of kinds of wells and manufacturing method thereof

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0369336A3 (en) * 1988-11-14 1990-08-22 National Semiconductor Corporation Process for fabricating bipolar and cmos transistors on a common substrate
EP0562309B1 (en) * 1992-03-25 2002-06-12 Texas Instruments Incorporated Planar process using common alignment marks for well implants
EP0730305A1 (en) * 1995-02-28 1996-09-04 STMicroelectronics S.r.l. High voltage N-channel MOSFET in CMOS-type technology and relating manufacturing process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH616024A5 (enExample) * 1977-05-05 1980-02-29 Centre Electron Horloger
US4412142A (en) * 1980-12-24 1983-10-25 General Electric Company Integrated circuit incorporating low voltage and high voltage semiconductor devices
JPS57155768A (en) * 1981-03-23 1982-09-25 Hitachi Ltd Semiconductor integrated circuit device
US4435896A (en) * 1981-12-07 1984-03-13 Bell Telephone Laboratories, Incorporated Method for fabricating complementary field effect transistor devices
US4442591A (en) * 1982-02-01 1984-04-17 Texas Instruments Incorporated High-voltage CMOS process
JPS58170047A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7405460B2 (en) 2003-03-20 2008-07-29 Ricoh Company, Ltd. Semiconductor device having a plurality of kinds of wells and manufacturing method thereof
US8003476B2 (en) 2003-03-20 2011-08-23 Ricoh Company, Ltd. Semiconductor device having a plurality of kinds of wells and manufacturing method thereof

Also Published As

Publication number Publication date
WO1985005736A1 (en) 1985-12-19
EP0182876A1 (en) 1986-06-04
EP0182876B1 (en) 1990-10-24
JPH0560665B2 (enExample) 1993-09-02
DE3580247D1 (de) 1990-11-29
EP0182876A4 (en) 1986-11-10

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EXPY Cancellation because of completion of term