JPS6148270B2 - - Google Patents
Info
- Publication number
- JPS6148270B2 JPS6148270B2 JP54019333A JP1933379A JPS6148270B2 JP S6148270 B2 JPS6148270 B2 JP S6148270B2 JP 54019333 A JP54019333 A JP 54019333A JP 1933379 A JP1933379 A JP 1933379A JP S6148270 B2 JPS6148270 B2 JP S6148270B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thyristor
- gate
- turn
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
Landscapes
- Thyristor Switches And Gates (AREA)
- Thyristors (AREA)
- Power Conversion In General (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1933379A JPS55111168A (en) | 1979-02-21 | 1979-02-21 | Turn-off thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1933379A JPS55111168A (en) | 1979-02-21 | 1979-02-21 | Turn-off thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55111168A JPS55111168A (en) | 1980-08-27 |
| JPS6148270B2 true JPS6148270B2 (en:Method) | 1986-10-23 |
Family
ID=11996473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1933379A Granted JPS55111168A (en) | 1979-02-21 | 1979-02-21 | Turn-off thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55111168A (en:Method) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160161A (en) * | 1981-03-27 | 1982-10-02 | Meidensha Electric Mfg Co Ltd | Gate turn-off thyristor |
| JPS57178368A (en) * | 1981-04-27 | 1982-11-02 | Hitachi Ltd | Semiconductor device for breaking current |
| DE4215378C1 (de) * | 1992-05-11 | 1993-09-30 | Siemens Ag | Thyristor mit Durchbruchbereich |
| FR2718900B1 (fr) * | 1994-04-13 | 1996-09-06 | Sgs Thomson Microelectronics | Dispositif de protection contre les surintensités. |
-
1979
- 1979-02-21 JP JP1933379A patent/JPS55111168A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55111168A (en) | 1980-08-27 |
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