JPS6146067B2 - - Google Patents

Info

Publication number
JPS6146067B2
JPS6146067B2 JP55111947A JP11194780A JPS6146067B2 JP S6146067 B2 JPS6146067 B2 JP S6146067B2 JP 55111947 A JP55111947 A JP 55111947A JP 11194780 A JP11194780 A JP 11194780A JP S6146067 B2 JPS6146067 B2 JP S6146067B2
Authority
JP
Japan
Prior art keywords
layer
thyristor
oxygen
film
nitrogen stream
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55111947A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5735373A (en
Inventor
Masaaki Sadamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11194780A priority Critical patent/JPS5735373A/ja
Publication of JPS5735373A publication Critical patent/JPS5735373A/ja
Publication of JPS6146067B2 publication Critical patent/JPS6146067B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
JP11194780A 1980-08-11 1980-08-11 Manufacture of planar type thyristor Granted JPS5735373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11194780A JPS5735373A (en) 1980-08-11 1980-08-11 Manufacture of planar type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11194780A JPS5735373A (en) 1980-08-11 1980-08-11 Manufacture of planar type thyristor

Publications (2)

Publication Number Publication Date
JPS5735373A JPS5735373A (en) 1982-02-25
JPS6146067B2 true JPS6146067B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-10-11

Family

ID=14574128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11194780A Granted JPS5735373A (en) 1980-08-11 1980-08-11 Manufacture of planar type thyristor

Country Status (1)

Country Link
JP (1) JPS5735373A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10727307B2 (en) 2016-01-05 2020-07-28 Boe Technology Group Co., Ltd. Display substrate and fabrication method thereof, and display device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60169142A (ja) * 1984-02-10 1985-09-02 Sony Corp 半導体装置の製造方法
JPH03225959A (ja) * 1990-01-31 1991-10-04 Sharp Corp 固体撮像素子の製造方法
CN103700591B (zh) * 2013-12-26 2016-03-16 鞍山市华辰电力器件有限公司 采用烧结工艺制造高压大功率晶闸管的方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339744A (en) * 1976-09-24 1978-04-11 Keihoku Seiki Seisakushiyo Yuu Long film mount and file sheet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10727307B2 (en) 2016-01-05 2020-07-28 Boe Technology Group Co., Ltd. Display substrate and fabrication method thereof, and display device

Also Published As

Publication number Publication date
JPS5735373A (en) 1982-02-25

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