JPS5735373A - Manufacture of planar type thyristor - Google Patents

Manufacture of planar type thyristor

Info

Publication number
JPS5735373A
JPS5735373A JP11194780A JP11194780A JPS5735373A JP S5735373 A JPS5735373 A JP S5735373A JP 11194780 A JP11194780 A JP 11194780A JP 11194780 A JP11194780 A JP 11194780A JP S5735373 A JPS5735373 A JP S5735373A
Authority
JP
Japan
Prior art keywords
current
thyristor
oxygen
planar type
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11194780A
Other languages
Japanese (ja)
Other versions
JPS6146067B2 (en
Inventor
Masaaki Sadamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11194780A priority Critical patent/JPS5735373A/en
Publication of JPS5735373A publication Critical patent/JPS5735373A/en
Publication of JPS6146067B2 publication Critical patent/JPS6146067B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To set the gate trigger current of a thyristor at a desired level by a method wherein thyristor surface charge density is regulated by heating in an atmosphere of oxygen. CONSTITUTION:An SiO2 film 6 is formed on an exposed surface along the junction border of a planar type thyristor silicon chip 1. The film is first heated in an oxygen current and then is let to gradually cool down and be sintered in a nitrogen current. It is again heated in an oxygen current, to be cooled in an nitrogen current again. A cooling speed is selected and a thyristor gate trigger current is set at a desired value.
JP11194780A 1980-08-11 1980-08-11 Manufacture of planar type thyristor Granted JPS5735373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11194780A JPS5735373A (en) 1980-08-11 1980-08-11 Manufacture of planar type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11194780A JPS5735373A (en) 1980-08-11 1980-08-11 Manufacture of planar type thyristor

Publications (2)

Publication Number Publication Date
JPS5735373A true JPS5735373A (en) 1982-02-25
JPS6146067B2 JPS6146067B2 (en) 1986-10-11

Family

ID=14574128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11194780A Granted JPS5735373A (en) 1980-08-11 1980-08-11 Manufacture of planar type thyristor

Country Status (1)

Country Link
JP (1) JPS5735373A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60169142A (en) * 1984-02-10 1985-09-02 Sony Corp Manufacture of semiconductor device
JPH03225959A (en) * 1990-01-31 1991-10-04 Sharp Corp Manufacture of solid-state image sensing element
CN103700591A (en) * 2013-12-26 2014-04-02 鞍山市华辰电力器件有限公司 Method for manufacturing high-voltage large-power thyristor by adopting sintering process

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105575893A (en) 2016-01-05 2016-05-11 京东方科技集团股份有限公司 Display substrate and fabrication method thereof and display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339744A (en) * 1976-09-24 1978-04-11 Keihoku Seiki Seisakushiyo Yuu Long film mount and file sheet

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339744A (en) * 1976-09-24 1978-04-11 Keihoku Seiki Seisakushiyo Yuu Long film mount and file sheet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60169142A (en) * 1984-02-10 1985-09-02 Sony Corp Manufacture of semiconductor device
JPH03225959A (en) * 1990-01-31 1991-10-04 Sharp Corp Manufacture of solid-state image sensing element
CN103700591A (en) * 2013-12-26 2014-04-02 鞍山市华辰电力器件有限公司 Method for manufacturing high-voltage large-power thyristor by adopting sintering process

Also Published As

Publication number Publication date
JPS6146067B2 (en) 1986-10-11

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