JPS6143712B2 - - Google Patents
Info
- Publication number
- JPS6143712B2 JPS6143712B2 JP55095397A JP9539780A JPS6143712B2 JP S6143712 B2 JPS6143712 B2 JP S6143712B2 JP 55095397 A JP55095397 A JP 55095397A JP 9539780 A JP9539780 A JP 9539780A JP S6143712 B2 JPS6143712 B2 JP S6143712B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- insulating film
- image display
- transistor
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 239000010408 film Substances 0.000 claims description 33
- 239000003990 capacitor Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229920001721 polyimide Polymers 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910020968 MoSi2 Inorganic materials 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 239000009719 polyimide resin Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 30
- 239000004973 liquid crystal related substance Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 210000002858 crystal cell Anatomy 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9539780A JPS5720778A (en) | 1980-07-11 | 1980-07-11 | Image display unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9539780A JPS5720778A (en) | 1980-07-11 | 1980-07-11 | Image display unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5720778A JPS5720778A (en) | 1982-02-03 |
| JPS6143712B2 true JPS6143712B2 (OSRAM) | 1986-09-29 |
Family
ID=14136518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9539780A Granted JPS5720778A (en) | 1980-07-11 | 1980-07-11 | Image display unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5720778A (OSRAM) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS582871A (ja) * | 1981-06-29 | 1983-01-08 | 株式会社東芝 | 液晶表示装置 |
| DE3684150D1 (de) * | 1986-09-26 | 1992-04-09 | Ibm | Halbleiter-integrierte anzeige. |
| US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
| US5229644A (en) * | 1987-09-09 | 1993-07-20 | Casio Computer Co., Ltd. | Thin film transistor having a transparent electrode and substrate |
| US5166085A (en) * | 1987-09-09 | 1992-11-24 | Casio Computer Co., Ltd. | Method of manufacturing a thin film transistor |
| JP3039936B2 (ja) * | 1989-08-25 | 2000-05-08 | 株式会社日立製作所 | 電力線の劣化判定方法及びその装置 |
| JP2812851B2 (ja) * | 1993-03-24 | 1998-10-22 | シャープ株式会社 | 反射型液晶表示装置 |
| JPH08190106A (ja) * | 1995-01-10 | 1996-07-23 | Victor Co Of Japan Ltd | アクティブマトリクス装置及びその駆動方法 |
| JP2694126B2 (ja) * | 1995-02-06 | 1997-12-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 液晶表示装置及びその製造方法 |
| US6424388B1 (en) | 1995-04-28 | 2002-07-23 | International Business Machines Corporation | Reflective spatial light modulator array |
| JP3349332B2 (ja) | 1995-04-28 | 2002-11-25 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 反射式空間光変調素子配列及びその形成方法 |
| JP2001125510A (ja) * | 1995-11-17 | 2001-05-11 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型ｅｌ表示装置 |
| US6800875B1 (en) | 1995-11-17 | 2004-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix electro-luminescent display device with an organic leveling layer |
| JP2001109402A (ja) * | 1995-11-17 | 2001-04-20 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| TW309633B (OSRAM) | 1995-12-14 | 1997-07-01 | Handotai Energy Kenkyusho Kk | |
| US6831623B2 (en) | 1996-10-22 | 2004-12-14 | Seiko Epson Corporation | Liquid crystal panel substrate, liquid crystal panel, and electronic equipment and projection type display device both using the same |
| US7872728B1 (en) | 1996-10-22 | 2011-01-18 | Seiko Epson Corporation | Liquid crystal panel substrate, liquid crystal panel, and electronic device and projection display device using the same |
| JP3530362B2 (ja) * | 1996-12-19 | 2004-05-24 | 三洋電機株式会社 | 自発光型画像表示装置 |
| JPH10319860A (ja) | 1997-05-23 | 1998-12-04 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
| JP3283221B2 (ja) * | 1997-07-29 | 2002-05-20 | 株式会社東芝 | 液晶表示素子 |
| US6069405A (en) * | 1997-08-12 | 2000-05-30 | Thomson Licensing S.A. | High capacitance mirror driver cell |
| JP3934236B2 (ja) * | 1998-01-14 | 2007-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US7202497B2 (en) | 1997-11-27 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| GB9827901D0 (en) * | 1998-12-19 | 1999-02-10 | Secr Defence | Active semiconductor |
| US6346730B1 (en) * | 1999-04-06 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate |
-
1980
- 1980-07-11 JP JP9539780A patent/JPS5720778A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5720778A (en) | 1982-02-03 |
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