JPS6142869B2 - - Google Patents

Info

Publication number
JPS6142869B2
JPS6142869B2 JP54057723A JP5772379A JPS6142869B2 JP S6142869 B2 JPS6142869 B2 JP S6142869B2 JP 54057723 A JP54057723 A JP 54057723A JP 5772379 A JP5772379 A JP 5772379A JP S6142869 B2 JPS6142869 B2 JP S6142869B2
Authority
JP
Japan
Prior art keywords
ccd
infrared
connecting member
sensing element
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54057723A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55150279A (en
Inventor
Soichi Imai
Hiroshi Takigawa
Shoji Doi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5772379A priority Critical patent/JPS55150279A/ja
Publication of JPS55150279A publication Critical patent/JPS55150279A/ja
Publication of JPS6142869B2 publication Critical patent/JPS6142869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/157CCD or CID infrared image sensors
    • H10F39/1575CCD or CID infrared image sensors of the hybrid type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1301Shape
    • H01L2224/13016Shape in side view

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Wire Bonding (AREA)
JP5772379A 1979-05-10 1979-05-10 Infrared ray camera device Granted JPS55150279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5772379A JPS55150279A (en) 1979-05-10 1979-05-10 Infrared ray camera device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5772379A JPS55150279A (en) 1979-05-10 1979-05-10 Infrared ray camera device

Publications (2)

Publication Number Publication Date
JPS55150279A JPS55150279A (en) 1980-11-22
JPS6142869B2 true JPS6142869B2 (enrdf_load_stackoverflow) 1986-09-24

Family

ID=13063853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5772379A Granted JPS55150279A (en) 1979-05-10 1979-05-10 Infrared ray camera device

Country Status (1)

Country Link
JP (1) JPS55150279A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229342A (ja) * 1985-04-03 1986-10-13 Fujitsu Ltd バンプ電極の接続方法
JP2574145B2 (ja) * 1985-05-10 1997-01-22 富士通株式会社 半導体装置
US5485010A (en) * 1994-01-13 1996-01-16 Texas Instruments Incorporated Thermal isolation structure for hybrid thermal imaging system
US6794725B2 (en) * 1999-12-21 2004-09-21 Xerox Corporation Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources
JP2007214191A (ja) * 2006-02-07 2007-08-23 Sumitomo Heavy Ind Ltd 放射線検出器および放射線検査装置
JP5287694B2 (ja) * 2009-12-21 2013-09-11 富士通株式会社 電子装置の製造方法及び電子部品製造装置

Also Published As

Publication number Publication date
JPS55150279A (en) 1980-11-22

Similar Documents

Publication Publication Date Title
US4206470A (en) Thin film interconnect for multicolor IR/CCD
US5120960A (en) Infrared image detecting device and method
US5904495A (en) Interconnection technique for hybrid integrated devices
JPH07311083A (ja) 赤外検出器及び感熱撮像システムの製造方法
JPS6142869B2 (enrdf_load_stackoverflow)
US5436450A (en) Infrared detector local biasing structure and method
JPH03276750A (ja) ハイブリッド素子及びその製造方法
CN100440520C (zh) 半导体装置及其制造方法
US20230282665A1 (en) Close butted collocated variable technology imaging arrays on a single roic
US4364973A (en) Method for fabricating a solid-state imaging device using photoconductive film
JP3940804B2 (ja) ハイブリッド型半導体装置及びその製造方法
JPS6258553B2 (enrdf_load_stackoverflow)
GB2241605A (en) Infrared photodiodes, arrays and their manufacture
JPS63308970A (ja) ハイブリッド型赤外線検出装置
US4025793A (en) Radiation detector with improved electrical interconnections
JP2576383B2 (ja) バンプ接合によるハイブリッド構造素子の製造方法
JPH05343407A (ja) 基板接続用バンプ電極
JPH05152551A (ja) 固体撮像素子の製造方法
JP2763131B2 (ja) 固体撮像装置
Lesser Very large format back illuminated CCDs
JPS63280452A (ja) 焦電型赤外線撮像素子
KR100290442B1 (ko) 열영상반도체소자
JPH04293240A (ja) 赤外線撮像装置
JPH05129581A (ja) 光電変換装置
JPH01161775A (ja) 固体撮像装置