JPS55150279A - Infrared ray camera device - Google Patents

Infrared ray camera device

Info

Publication number
JPS55150279A
JPS55150279A JP5772379A JP5772379A JPS55150279A JP S55150279 A JPS55150279 A JP S55150279A JP 5772379 A JP5772379 A JP 5772379A JP 5772379 A JP5772379 A JP 5772379A JP S55150279 A JPS55150279 A JP S55150279A
Authority
JP
Japan
Prior art keywords
infrared ray
input unit
detector
camera device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5772379A
Other languages
Japanese (ja)
Other versions
JPS6142869B2 (en
Inventor
Soichi Imai
Hiroshi Takigawa
Shoji Doi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5772379A priority Critical patent/JPS55150279A/en
Publication of JPS55150279A publication Critical patent/JPS55150279A/en
Publication of JPS6142869B2 publication Critical patent/JPS6142869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • H01L27/14881—Infrared CCD or CID imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Wire Bonding (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent deterioration of characteristics of an infrared ray camera device due to strain by forming an infrared ray detector and its input unit corresponding thereto asymmetrical in vertical direction and connecting therebetween with conductive material having bent buffer. CONSTITUTION:A CCD and its input unit 15, and a protective layer 18 are formed on a substrate 14, and a resist pattern 19 is formed on predetermined portion thereof. Then, an Au layer 17a is selectively evaporated, and a thick Au layer 17b is superimposed thereon. Subsequently, when the resist 19 is molten and removed, a connecting member 17 is completed in the input unit 15 at the CCD. The connecting member 17 is connected to a semiconductor substrate 10 having the detector 12 in predetermined positional relationship. According to this configuration, the mechanical strain at connecting time does not deteriorate the detector, nor disconnect the connector at the step of thermal hysteresis.
JP5772379A 1979-05-10 1979-05-10 Infrared ray camera device Granted JPS55150279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5772379A JPS55150279A (en) 1979-05-10 1979-05-10 Infrared ray camera device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5772379A JPS55150279A (en) 1979-05-10 1979-05-10 Infrared ray camera device

Publications (2)

Publication Number Publication Date
JPS55150279A true JPS55150279A (en) 1980-11-22
JPS6142869B2 JPS6142869B2 (en) 1986-09-24

Family

ID=13063853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5772379A Granted JPS55150279A (en) 1979-05-10 1979-05-10 Infrared ray camera device

Country Status (1)

Country Link
JP (1) JPS55150279A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229342A (en) * 1985-04-03 1986-10-13 Fujitsu Ltd Connection for bump electrode
JPS61256745A (en) * 1985-05-10 1986-11-14 Fujitsu Ltd Semiconductor device
EP0663696A3 (en) * 1994-01-13 1995-08-16 Texas Instruments Inc
JP2001225502A (en) * 1999-12-21 2001-08-21 Xerox Corp Hybrid device having micro spring inner wiring for achieving high uniformity of integrated light emitting source
JP2007214191A (en) * 2006-02-07 2007-08-23 Sumitomo Heavy Ind Ltd Radiation detector and radiographic examination equipment
JP2011129824A (en) * 2009-12-21 2011-06-30 Fujitsu Ltd Method of manufacturing electronic device, and device for manufacturing electronic component

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229342A (en) * 1985-04-03 1986-10-13 Fujitsu Ltd Connection for bump electrode
JPS61256745A (en) * 1985-05-10 1986-11-14 Fujitsu Ltd Semiconductor device
EP0663696A3 (en) * 1994-01-13 1995-08-16 Texas Instruments Inc
JP2001225502A (en) * 1999-12-21 2001-08-21 Xerox Corp Hybrid device having micro spring inner wiring for achieving high uniformity of integrated light emitting source
JP2007214191A (en) * 2006-02-07 2007-08-23 Sumitomo Heavy Ind Ltd Radiation detector and radiographic examination equipment
JP2011129824A (en) * 2009-12-21 2011-06-30 Fujitsu Ltd Method of manufacturing electronic device, and device for manufacturing electronic component

Also Published As

Publication number Publication date
JPS6142869B2 (en) 1986-09-24

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