JPS6142411B2 - - Google Patents
Info
- Publication number
- JPS6142411B2 JPS6142411B2 JP51042128A JP4212876A JPS6142411B2 JP S6142411 B2 JPS6142411 B2 JP S6142411B2 JP 51042128 A JP51042128 A JP 51042128A JP 4212876 A JP4212876 A JP 4212876A JP S6142411 B2 JPS6142411 B2 JP S6142411B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- substrate
- photoresist
- photoresist film
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- -1 phosphorus ions Chemical class 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4212876A JPS52125276A (en) | 1976-04-14 | 1976-04-14 | Preparation of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4212876A JPS52125276A (en) | 1976-04-14 | 1976-04-14 | Preparation of semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52125276A JPS52125276A (en) | 1977-10-20 |
| JPS6142411B2 true JPS6142411B2 (enrdf_load_stackoverflow) | 1986-09-20 |
Family
ID=12627292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4212876A Granted JPS52125276A (en) | 1976-04-14 | 1976-04-14 | Preparation of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52125276A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS574124A (en) * | 1980-06-10 | 1982-01-09 | Fujitsu Ltd | Manufacture of germanium semiconductor device |
-
1976
- 1976-04-14 JP JP4212876A patent/JPS52125276A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52125276A (en) | 1977-10-20 |
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