JPS6142261B2 - - Google Patents
Info
- Publication number
- JPS6142261B2 JPS6142261B2 JP1885780A JP1885780A JPS6142261B2 JP S6142261 B2 JPS6142261 B2 JP S6142261B2 JP 1885780 A JP1885780 A JP 1885780A JP 1885780 A JP1885780 A JP 1885780A JP S6142261 B2 JPS6142261 B2 JP S6142261B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma etching
- mask
- pattern
- layer
- resistant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 27
- 238000001020 plasma etching Methods 0.000 claims description 26
- 230000007547 defect Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 8
- 239000011247 coating layer Substances 0.000 claims description 6
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000002950 deficient Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1885780A JPS56114950A (en) | 1980-02-18 | 1980-02-18 | Method for correcting mask pattern defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1885780A JPS56114950A (en) | 1980-02-18 | 1980-02-18 | Method for correcting mask pattern defect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56114950A JPS56114950A (en) | 1981-09-09 |
| JPS6142261B2 true JPS6142261B2 (enrdf_load_stackoverflow) | 1986-09-19 |
Family
ID=11983203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1885780A Granted JPS56114950A (en) | 1980-02-18 | 1980-02-18 | Method for correcting mask pattern defect |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56114950A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4548883A (en) * | 1983-05-31 | 1985-10-22 | At&T Bell Laboratories | Correction of lithographic masks |
| JPS62195662A (ja) * | 1986-02-24 | 1987-08-28 | Seiko Instr & Electronics Ltd | マスクリペア方法及び装置 |
-
1980
- 1980-02-18 JP JP1885780A patent/JPS56114950A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56114950A (en) | 1981-09-09 |
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