JPS6142179A - 半導体結合超伝導素子及びその製造方法 - Google Patents
半導体結合超伝導素子及びその製造方法Info
- Publication number
- JPS6142179A JPS6142179A JP16411784A JP16411784A JPS6142179A JP S6142179 A JPS6142179 A JP S6142179A JP 16411784 A JP16411784 A JP 16411784A JP 16411784 A JP16411784 A JP 16411784A JP S6142179 A JPS6142179 A JP S6142179A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- superconducting
- convex portion
- coupled
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 16
- 230000035515 penetration Effects 0.000 claims description 8
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000002887 superconductor Substances 0.000 abstract description 12
- 239000010408 film Substances 0.000 abstract description 10
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract 2
- 230000000149 penetrating effect Effects 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16411784A JPS6142179A (ja) | 1984-08-03 | 1984-08-03 | 半導体結合超伝導素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16411784A JPS6142179A (ja) | 1984-08-03 | 1984-08-03 | 半導体結合超伝導素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6142179A true JPS6142179A (ja) | 1986-02-28 |
| JPH0564473B2 JPH0564473B2 (enrdf_load_stackoverflow) | 1993-09-14 |
Family
ID=15787071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16411784A Granted JPS6142179A (ja) | 1984-08-03 | 1984-08-03 | 半導体結合超伝導素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6142179A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005294782A (ja) * | 2004-03-31 | 2005-10-20 | Takeshi Awaji | 半導体超伝導素子 |
| WO2024069696A1 (ja) | 2022-09-26 | 2024-04-04 | 富士通株式会社 | 量子デバイス、量子演算装置及び量子デバイスの製造方法 |
-
1984
- 1984-08-03 JP JP16411784A patent/JPS6142179A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005294782A (ja) * | 2004-03-31 | 2005-10-20 | Takeshi Awaji | 半導体超伝導素子 |
| WO2024069696A1 (ja) | 2022-09-26 | 2024-04-04 | 富士通株式会社 | 量子デバイス、量子演算装置及び量子デバイスの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0564473B2 (enrdf_load_stackoverflow) | 1993-09-14 |
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