JPS6141132B2 - - Google Patents

Info

Publication number
JPS6141132B2
JPS6141132B2 JP15780783A JP15780783A JPS6141132B2 JP S6141132 B2 JPS6141132 B2 JP S6141132B2 JP 15780783 A JP15780783 A JP 15780783A JP 15780783 A JP15780783 A JP 15780783A JP S6141132 B2 JPS6141132 B2 JP S6141132B2
Authority
JP
Japan
Prior art keywords
plasma
substrate
electrode
potential
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15780783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5980932A (ja
Inventor
Takashi Tsuchimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15780783A priority Critical patent/JPS5980932A/ja
Publication of JPS5980932A publication Critical patent/JPS5980932A/ja
Publication of JPS6141132B2 publication Critical patent/JPS6141132B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP15780783A 1983-08-31 1983-08-31 プラズマ処理装置 Granted JPS5980932A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15780783A JPS5980932A (ja) 1983-08-31 1983-08-31 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15780783A JPS5980932A (ja) 1983-08-31 1983-08-31 プラズマ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP14375276A Division JPS5368171A (en) 1976-11-30 1976-11-30 Method and apparatus for plasma treatment

Publications (2)

Publication Number Publication Date
JPS5980932A JPS5980932A (ja) 1984-05-10
JPS6141132B2 true JPS6141132B2 (en, 2012) 1986-09-12

Family

ID=15657713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15780783A Granted JPS5980932A (ja) 1983-08-31 1983-08-31 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS5980932A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190428U (en, 2012) * 1986-05-23 1987-12-03

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147642A (ja) * 1984-08-14 1986-03-08 Teru Saamuko Kk プラズマ発生装置
NL8702875A (nl) * 1987-12-01 1989-07-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij fotolak op een laag van siliciumoxide op een halfgeleidersubstraat wordt verwijderd.
JP2767572B2 (ja) * 1995-10-09 1998-06-18 株式会社半導体エネルギー研究所 絶縁膜形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190428U (en, 2012) * 1986-05-23 1987-12-03

Also Published As

Publication number Publication date
JPS5980932A (ja) 1984-05-10

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