JPS6140142B2 - - Google Patents
Info
- Publication number
- JPS6140142B2 JPS6140142B2 JP14835980A JP14835980A JPS6140142B2 JP S6140142 B2 JPS6140142 B2 JP S6140142B2 JP 14835980 A JP14835980 A JP 14835980A JP 14835980 A JP14835980 A JP 14835980A JP S6140142 B2 JPS6140142 B2 JP S6140142B2
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- silicon
- resistance
- polycrystalline silicon
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000007664 blowing Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
Landscapes
- Read Only Memory (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Fuses (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14835980A JPS5772367A (en) | 1980-10-24 | 1980-10-24 | Fusing type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14835980A JPS5772367A (en) | 1980-10-24 | 1980-10-24 | Fusing type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5772367A JPS5772367A (en) | 1982-05-06 |
| JPS6140142B2 true JPS6140142B2 (enrdf_load_stackoverflow) | 1986-09-08 |
Family
ID=15450987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14835980A Granted JPS5772367A (en) | 1980-10-24 | 1980-10-24 | Fusing type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5772367A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58202548A (ja) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | ヒユ−ズ切断半導体装置 |
| JPS59146969U (ja) * | 1983-03-23 | 1984-10-01 | 日本電気株式会社 | 半導体装置 |
| JP2627283B2 (ja) * | 1987-11-06 | 1997-07-02 | セイコー電子工業株式会社 | サーマルヘッド及びその製造方法 |
| JPH04373148A (ja) * | 1991-06-21 | 1992-12-25 | Nippon Steel Corp | 半導体装置のヒューズ構造 |
-
1980
- 1980-10-24 JP JP14835980A patent/JPS5772367A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5772367A (en) | 1982-05-06 |