JPS6140078A - 半導体レ−ザ装置の製造方法 - Google Patents
半導体レ−ザ装置の製造方法Info
- Publication number
- JPS6140078A JPS6140078A JP16171784A JP16171784A JPS6140078A JP S6140078 A JPS6140078 A JP S6140078A JP 16171784 A JP16171784 A JP 16171784A JP 16171784 A JP16171784 A JP 16171784A JP S6140078 A JPS6140078 A JP S6140078A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mixed crystal
- crystal ratio
- substrate
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 238000003486 chemical etching Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 19
- 238000005253 cladding Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 description 12
- 238000003776 cleavage reaction Methods 0.000 description 8
- 230000007017 scission Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 241001190694 Muda Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000002655 kraft paper Substances 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Weting (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16171784A JPS6140078A (ja) | 1984-07-31 | 1984-07-31 | 半導体レ−ザ装置の製造方法 |
| CA000487734A CA1247947A (en) | 1984-07-31 | 1985-07-30 | Method of manufacturing semiconductor device |
| US06/761,023 US4675074A (en) | 1984-07-31 | 1985-07-31 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16171784A JPS6140078A (ja) | 1984-07-31 | 1984-07-31 | 半導体レ−ザ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6140078A true JPS6140078A (ja) | 1986-02-26 |
| JPH0556675B2 JPH0556675B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-20 |
Family
ID=15740538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16171784A Granted JPS6140078A (ja) | 1984-07-31 | 1984-07-31 | 半導体レ−ザ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6140078A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1984
- 1984-07-31 JP JP16171784A patent/JPS6140078A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0556675B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6215878A (ja) | 半導体レ−ザ装置 | |
| JPS6237911B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPS6140078A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPS6142186A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPH0584075B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JP3108183B2 (ja) | 半導体レーザ素子とその製造方法 | |
| JPS61272987A (ja) | 半導体レ−ザ素子 | |
| JPS60213072A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPS6142185A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPS6142184A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPS6184888A (ja) | 埋込みヘテロ型半導体レ−ザ | |
| JPS5834988A (ja) | 半導体レ−ザの製造方法 | |
| JPH02119285A (ja) | 半導体レーザの製造方法 | |
| KR0179012B1 (ko) | 반도체 레이저 다이오드 제조방법 | |
| JPS6140079A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPH03222488A (ja) | 半導体レーザ素子及びその製造方法 | |
| JPS60161688A (ja) | 半導体レ−ザの製造方法 | |
| JPS59222984A (ja) | 半導体レ−ザ装置 | |
| JPS61284985A (ja) | 半導体レ−ザ装置の作製方法 | |
| JPS62229892A (ja) | 半導体装置およびその製法 | |
| JPS6042885A (ja) | 半導体レ−ザ装置 | |
| JPS63102385A (ja) | 自励発振型半導体レ−ザの製造方法 | |
| JPH0276284A (ja) | 半導体レーザ製造方法 | |
| JPS62144380A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPS6144484A (ja) | 半導体レ−ザの製造方法 |