JPS6138860B2 - - Google Patents
Info
- Publication number
- JPS6138860B2 JPS6138860B2 JP11707379A JP11707379A JPS6138860B2 JP S6138860 B2 JPS6138860 B2 JP S6138860B2 JP 11707379 A JP11707379 A JP 11707379A JP 11707379 A JP11707379 A JP 11707379A JP S6138860 B2 JPS6138860 B2 JP S6138860B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern
- polycrystalline silicon
- wiring
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 61
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 36
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 230000000873 masking effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 59
- 239000011229 interlayer Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 230000010354 integration Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11707379A JPS5642356A (en) | 1979-09-12 | 1979-09-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11707379A JPS5642356A (en) | 1979-09-12 | 1979-09-12 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5642356A JPS5642356A (en) | 1981-04-20 |
| JPS6138860B2 true JPS6138860B2 (US07122547-20061017-C00273.png) | 1986-09-01 |
Family
ID=14702733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11707379A Granted JPS5642356A (en) | 1979-09-12 | 1979-09-12 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5642356A (US07122547-20061017-C00273.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0366559U (US07122547-20061017-C00273.png) * | 1989-10-30 | 1991-06-27 | ||
| JPH0640720B2 (ja) * | 1986-08-01 | 1994-05-25 | 株式会社日立製作所 | 小型回転機 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58121648A (ja) * | 1982-01-13 | 1983-07-20 | Fujitsu Ltd | 多層配線形成方法 |
| JPS6125697A (ja) * | 1984-07-13 | 1986-02-04 | Hitachi Plant Eng & Constr Co Ltd | 廃水の窒素除去装置 |
-
1979
- 1979-09-12 JP JP11707379A patent/JPS5642356A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0640720B2 (ja) * | 1986-08-01 | 1994-05-25 | 株式会社日立製作所 | 小型回転機 |
| JPH0366559U (US07122547-20061017-C00273.png) * | 1989-10-30 | 1991-06-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5642356A (en) | 1981-04-20 |
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