JPS6137799B2 - - Google Patents
Info
- Publication number
- JPS6137799B2 JPS6137799B2 JP52013558A JP1355877A JPS6137799B2 JP S6137799 B2 JPS6137799 B2 JP S6137799B2 JP 52013558 A JP52013558 A JP 52013558A JP 1355877 A JP1355877 A JP 1355877A JP S6137799 B2 JPS6137799 B2 JP S6137799B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- channel region
- gate
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 15
- 230000006698 induction Effects 0.000 claims description 11
- 230000003068 static effect Effects 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009532 heart rate measurement Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1355877A JPS5399778A (en) | 1977-02-11 | 1977-02-11 | Mos and mis electrostatic induction transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1355877A JPS5399778A (en) | 1977-02-11 | 1977-02-11 | Mos and mis electrostatic induction transistor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58132570A Division JPS5936960A (ja) | 1983-07-20 | 1983-07-20 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5399778A JPS5399778A (en) | 1978-08-31 |
| JPS6137799B2 true JPS6137799B2 (cs) | 1986-08-26 |
Family
ID=11836496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1355877A Granted JPS5399778A (en) | 1977-02-11 | 1977-02-11 | Mos and mis electrostatic induction transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5399778A (cs) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54144183A (en) * | 1978-05-01 | 1979-11-10 | Handotai Kenkyu Shinkokai | Insulated gate type electrostatic induction transistor and semiconductor integrated circuit |
| JPS5768075A (en) * | 1980-10-16 | 1982-04-26 | Nippon Gakki Seizo Kk | Manufacture of integrated circuit device |
| JPS57211277A (en) * | 1981-06-23 | 1982-12-25 | Seiko Instr & Electronics Ltd | Insulating gate type electrostatic induction transistor and manufacture thereof |
| JPS60207368A (ja) * | 1984-03-31 | 1985-10-18 | Res Dev Corp Of Japan | 相補型ｍｏｓ集積回路の製造方法 |
-
1977
- 1977-02-11 JP JP1355877A patent/JPS5399778A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5399778A (en) | 1978-08-31 |
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