JPS5399778A - Mos and mis electrostatic induction transistor - Google Patents

Mos and mis electrostatic induction transistor

Info

Publication number
JPS5399778A
JPS5399778A JP1355877A JP1355877A JPS5399778A JP S5399778 A JPS5399778 A JP S5399778A JP 1355877 A JP1355877 A JP 1355877A JP 1355877 A JP1355877 A JP 1355877A JP S5399778 A JPS5399778 A JP S5399778A
Authority
JP
Japan
Prior art keywords
mis
mos
electrostatic induction
induction transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1355877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6137799B2 (cs
Inventor
Jiyunichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP1355877A priority Critical patent/JPS5399778A/ja
Publication of JPS5399778A publication Critical patent/JPS5399778A/ja
Publication of JPS6137799B2 publication Critical patent/JPS6137799B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Junction Field-Effect Transistors (AREA)
JP1355877A 1977-02-11 1977-02-11 Mos and mis electrostatic induction transistor Granted JPS5399778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1355877A JPS5399778A (en) 1977-02-11 1977-02-11 Mos and mis electrostatic induction transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1355877A JPS5399778A (en) 1977-02-11 1977-02-11 Mos and mis electrostatic induction transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58132570A Division JPS5936960A (ja) 1983-07-20 1983-07-20 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5399778A true JPS5399778A (en) 1978-08-31
JPS6137799B2 JPS6137799B2 (cs) 1986-08-26

Family

ID=11836496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1355877A Granted JPS5399778A (en) 1977-02-11 1977-02-11 Mos and mis electrostatic induction transistor

Country Status (1)

Country Link
JP (1) JPS5399778A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768075A (en) * 1980-10-16 1982-04-26 Nippon Gakki Seizo Kk Manufacture of integrated circuit device
JPS57211277A (en) * 1981-06-23 1982-12-25 Seiko Instr & Electronics Ltd Insulating gate type electrostatic induction transistor and manufacture thereof
JPS60207368A (ja) * 1984-03-31 1985-10-18 Res Dev Corp Of Japan 相補型ｍｏｓ集積回路の製造方法
US5038188A (en) * 1978-05-01 1991-08-06 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated-gate type transistor and semiconductor integrated circuit using such transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5038188A (en) * 1978-05-01 1991-08-06 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated-gate type transistor and semiconductor integrated circuit using such transistor
JPS5768075A (en) * 1980-10-16 1982-04-26 Nippon Gakki Seizo Kk Manufacture of integrated circuit device
JPS57211277A (en) * 1981-06-23 1982-12-25 Seiko Instr & Electronics Ltd Insulating gate type electrostatic induction transistor and manufacture thereof
JPS60207368A (ja) * 1984-03-31 1985-10-18 Res Dev Corp Of Japan 相補型ｍｏｓ集積回路の製造方法

Also Published As

Publication number Publication date
JPS6137799B2 (cs) 1986-08-26

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