JPS6135711B2 - - Google Patents

Info

Publication number
JPS6135711B2
JPS6135711B2 JP53046118A JP4611878A JPS6135711B2 JP S6135711 B2 JPS6135711 B2 JP S6135711B2 JP 53046118 A JP53046118 A JP 53046118A JP 4611878 A JP4611878 A JP 4611878A JP S6135711 B2 JPS6135711 B2 JP S6135711B2
Authority
JP
Japan
Prior art keywords
silicon film
polycrystalline silicon
gate
film
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53046118A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54137983A (en
Inventor
Keizo Sakyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4611878A priority Critical patent/JPS54137983A/ja
Publication of JPS54137983A publication Critical patent/JPS54137983A/ja
Publication of JPS6135711B2 publication Critical patent/JPS6135711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP4611878A 1978-04-18 1978-04-18 Manufacture of mos semiconductor device Granted JPS54137983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4611878A JPS54137983A (en) 1978-04-18 1978-04-18 Manufacture of mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4611878A JPS54137983A (en) 1978-04-18 1978-04-18 Manufacture of mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS54137983A JPS54137983A (en) 1979-10-26
JPS6135711B2 true JPS6135711B2 (ca) 1986-08-14

Family

ID=12738070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4611878A Granted JPS54137983A (en) 1978-04-18 1978-04-18 Manufacture of mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS54137983A (ca)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023681A (en) * 1988-10-08 1991-06-11 Hyundai Electronics Industries Co., Ltd. Method for arranging EEPROM cells and a semiconductor device manufactured by the method
US5599727A (en) * 1994-12-15 1997-02-04 Sharp Kabushiki Kaisha Method for producing a floating gate memory device including implanting ions through an oxidized portion of the silicon film from which the floating gate is formed

Also Published As

Publication number Publication date
JPS54137983A (en) 1979-10-26

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