JPS6132809B2 - - Google Patents
Info
- Publication number
- JPS6132809B2 JPS6132809B2 JP59183892A JP18389284A JPS6132809B2 JP S6132809 B2 JPS6132809 B2 JP S6132809B2 JP 59183892 A JP59183892 A JP 59183892A JP 18389284 A JP18389284 A JP 18389284A JP S6132809 B2 JPS6132809 B2 JP S6132809B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- diffusion layer
- source
- drain diffusion
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 230000005669 field effect Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000010354 integration Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59183892A JPS6074435A (ja) | 1984-09-03 | 1984-09-03 | Mos型電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59183892A JPS6074435A (ja) | 1984-09-03 | 1984-09-03 | Mos型電界効果トランジスタの製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50154219A Division JPS5854496B2 (ja) | 1975-12-24 | 1975-12-24 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62078250A Division JPS62271429A (ja) | 1987-03-31 | 1987-03-31 | Mos型電界効果トランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6074435A JPS6074435A (ja) | 1985-04-26 |
JPS6132809B2 true JPS6132809B2 (US06818201-20041116-C00086.png) | 1986-07-29 |
Family
ID=16143636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59183892A Granted JPS6074435A (ja) | 1984-09-03 | 1984-09-03 | Mos型電界効果トランジスタの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6074435A (US06818201-20041116-C00086.png) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63180710U (US06818201-20041116-C00086.png) * | 1987-05-14 | 1988-11-22 | ||
JPS6449713U (US06818201-20041116-C00086.png) * | 1987-09-24 | 1989-03-28 | ||
JPH0425012U (US06818201-20041116-C00086.png) * | 1990-06-26 | 1992-02-28 | ||
JPH0443616Y2 (US06818201-20041116-C00086.png) * | 1986-12-30 | 1992-10-15 | ||
JPH0615293B2 (ja) * | 1986-04-16 | 1994-03-02 | ドネリ− コ−ポレイシヨン | パネル組立体を支持体に固着するファスナ |
JPH06173918A (ja) * | 1992-01-16 | 1994-06-21 | Nifco Inc | クリップ |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260223A (ja) * | 1985-09-09 | 1987-03-16 | Seiko Epson Corp | 半導体装置 |
WO1999056308A1 (fr) | 1998-04-28 | 1999-11-04 | Nikon Corporation | Systeme d'exposition et procede de production d'un microdispositif |
-
1984
- 1984-09-03 JP JP59183892A patent/JPS6074435A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0615293B2 (ja) * | 1986-04-16 | 1994-03-02 | ドネリ− コ−ポレイシヨン | パネル組立体を支持体に固着するファスナ |
JPH0443616Y2 (US06818201-20041116-C00086.png) * | 1986-12-30 | 1992-10-15 | ||
JPS63180710U (US06818201-20041116-C00086.png) * | 1987-05-14 | 1988-11-22 | ||
JPS6449713U (US06818201-20041116-C00086.png) * | 1987-09-24 | 1989-03-28 | ||
JPH0425012U (US06818201-20041116-C00086.png) * | 1990-06-26 | 1992-02-28 | ||
JPH06173918A (ja) * | 1992-01-16 | 1994-06-21 | Nifco Inc | クリップ |
Also Published As
Publication number | Publication date |
---|---|
JPS6074435A (ja) | 1985-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3865651A (en) | Method of manufacturing series gate type matrix circuits | |
JPS6132809B2 (US06818201-20041116-C00086.png) | ||
JP2952887B2 (ja) | 半導体装置およびその製造方法 | |
JPS5854496B2 (ja) | 半導体装置の製造方法 | |
JPH0142128B2 (US06818201-20041116-C00086.png) | ||
US3985591A (en) | Method of manufacturing parallel gate matrix circuits | |
KR100326693B1 (ko) | 전력금속산화막반도체(mos)트랜지스터 | |
JP2002507840A (ja) | 二重フィールド酸化プロセスにおけるステッパー・アライメントマークの形成 | |
JPS584456B2 (ja) | Mos シユウセキカイロ | |
JPH01120017A (ja) | パターン形成法 | |
JP3173173B2 (ja) | 半導体装置の製造方法 | |
JPH02280353A (ja) | 半導体集積回路 | |
JPS60263433A (ja) | 半導体装置用位置合せマ−ク | |
JPH05198680A (ja) | 半導体集積回路装置 | |
JPS59130434A (ja) | 半導体装置 | |
JPS62156857A (ja) | メモリ素子を含む半導体装置の製造方法 | |
JPH02162769A (ja) | 相補型薄膜トランジスタの製造方法 | |
JPS616865A (ja) | 半導体集積回路の製造方法 | |
JPS61140164A (ja) | 半導体集積回路の製造方法 | |
JPS61228663A (ja) | 半導体装置 | |
JPH0629176A (ja) | 半導体素子の露光方法 | |
JPS61268057A (ja) | 半導体装置 | |
JPS6410103B2 (US06818201-20041116-C00086.png) | ||
JPH03132068A (ja) | 半導体装置 | |
JPH03156959A (ja) | 半導体装置の製造方法 |