JPS6131422B2 - - Google Patents
Info
- Publication number
- JPS6131422B2 JPS6131422B2 JP57227568A JP22756882A JPS6131422B2 JP S6131422 B2 JPS6131422 B2 JP S6131422B2 JP 57227568 A JP57227568 A JP 57227568A JP 22756882 A JP22756882 A JP 22756882A JP S6131422 B2 JPS6131422 B2 JP S6131422B2
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- film
- vapor
- gas
- combustion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052739 hydrogen Inorganic materials 0.000 claims description 35
- 239000007789 gas Substances 0.000 claims description 34
- 239000001257 hydrogen Substances 0.000 claims description 34
- 150000002431 hydrogen Chemical class 0.000 claims description 29
- 239000010408 film Substances 0.000 claims description 25
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- -1 aluminum compound Chemical class 0.000 claims description 7
- 238000002485 combustion reaction Methods 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 1
- 150000002830 nitrogen compounds Chemical class 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 15
- 229910006404 SnO 2 Inorganic materials 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910003691 SiBr Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57227568A JPS59120945A (ja) | 1982-12-28 | 1982-12-28 | 水素選択性センサ |
US06/564,446 US4608549A (en) | 1982-12-28 | 1983-12-22 | Hydrogen-selective sensor and manufacturing method therefor |
KR1019830006122A KR870001325B1 (ko) | 1982-12-28 | 1983-12-22 | 가스검지소자 |
EP83307857A EP0115183B1 (en) | 1982-12-28 | 1983-12-22 | Hydrogen-selective sensor |
CA000444091A CA1204474A (en) | 1982-12-28 | 1983-12-22 | Hydrogen-selective sensor and manufacturing method therefor |
DE8383307857T DE3379285D1 (en) | 1982-12-28 | 1983-12-22 | Hydrogen-selective sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57227568A JPS59120945A (ja) | 1982-12-28 | 1982-12-28 | 水素選択性センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59120945A JPS59120945A (ja) | 1984-07-12 |
JPS6131422B2 true JPS6131422B2 (US06534493-20030318-C00184.png) | 1986-07-19 |
Family
ID=16862951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57227568A Granted JPS59120945A (ja) | 1982-12-28 | 1982-12-28 | 水素選択性センサ |
Country Status (5)
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63114629U (US06534493-20030318-C00184.png) * | 1987-01-21 | 1988-07-23 | ||
JPS63124924U (US06534493-20030318-C00184.png) * | 1987-02-05 | 1988-08-15 | ||
JPH0318833U (US06534493-20030318-C00184.png) * | 1989-02-28 | 1991-02-25 | ||
JPWO2004111628A1 (ja) * | 2003-06-12 | 2006-07-20 | 理研計器株式会社 | 接触燃焼式ガスセンサ、及びその製造方法 |
JP4532671B2 (ja) * | 1999-06-01 | 2010-08-25 | 新コスモス電機株式会社 | 水素ガス検知素子 |
JP2016523748A (ja) * | 2013-03-20 | 2016-08-12 | テクニップ フランス | 低温流体処理設備のための保護パネル、並びに、関連するアセンブリ、設備及び方法 |
JP2017173307A (ja) * | 2016-03-18 | 2017-09-28 | パナソニックIpマネジメント株式会社 | 水素センサ及び燃料電池自動車、並びに水素検出方法。 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4638286A (en) * | 1985-03-26 | 1987-01-20 | Enron Corp. | Reactive gas sensor |
JPS61223644A (ja) * | 1985-03-29 | 1986-10-04 | Nohmi Bosai Kogyo Co Ltd | 水素ガス検出素子及びその製法 |
GB8521628D0 (en) * | 1985-08-30 | 1985-10-02 | Atomic Energy Authority Uk | Sensor |
JPS6283641A (ja) * | 1985-10-08 | 1987-04-17 | Sharp Corp | 電界効果型半導体センサ |
DE3604594A1 (de) * | 1986-02-14 | 1987-08-20 | Schott Glaswerke | Duennfilmgassensoren mit hoher messempfindlichkeit als mehrschichtsysteme auf der basis von indiumoxid-tauchschichten zum nachweis von gasspuren in traegergasen |
US4751022A (en) * | 1986-04-24 | 1988-06-14 | Mitsubishi Gas Chemical Company, Inc. | Humidity-sensing component composition |
KR960016712B1 (ko) * | 1986-11-05 | 1996-12-20 | 오오니시 마사후미 | 가스센서 및 그의 제조방법 |
JP2702279B2 (ja) * | 1990-11-30 | 1998-01-21 | 新コスモス電機株式会社 | ガス検知素子 |
WO1993018399A1 (de) * | 1992-03-06 | 1993-09-16 | Siemens Aktiengesellschaft | Anordnung zur detektion von gasen in flüssigkeiten |
DE4431456C2 (de) * | 1994-09-03 | 1996-07-11 | Bosch Gmbh Robert | In Dick- oder Dünnschichttechnik hergestellter Gassensor |
US6265222B1 (en) * | 1999-01-15 | 2001-07-24 | Dimeo, Jr. Frank | Micro-machined thin film hydrogen gas sensor, and method of making and using the same |
DE10213805A1 (de) * | 2001-03-28 | 2002-11-07 | Denso Corp | Gassensor und Verfahren zum Herstellen eines Gassensors |
WO2004066415A2 (en) * | 2003-01-23 | 2004-08-05 | The Penn State Research Foundation | Thin film semi-permeable membranes for gas sensor and catalytic applications |
EP1679507B1 (en) | 2003-10-22 | 2014-03-05 | Murata Manufacturing Co. Ltd. | Proton acceptance type gas sensor |
JP4056987B2 (ja) * | 2004-04-28 | 2008-03-05 | アルプス電気株式会社 | 水素センサ及び水素の検知方法 |
JP2007248424A (ja) * | 2006-03-20 | 2007-09-27 | Atsumi Tec:Kk | 水素センサ |
GB2476123A (en) * | 2009-12-14 | 2011-06-15 | Graviner Ltd Kidde | MOS gas sensor apparatus and method of use |
GB2476122A (en) * | 2009-12-14 | 2011-06-15 | Graviner Ltd Kidde | MOS gas sensor apparatus and method of use |
CN104237339B (zh) * | 2014-09-29 | 2016-09-21 | 南京理工大学 | 一种四氧化三钴-氧化锌/石墨烯三元复合物及其制备方法 |
JP6437689B1 (ja) | 2018-08-07 | 2018-12-12 | 新コスモス電機株式会社 | Mems型半導体式ガス検知素子 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56168542A (en) * | 1980-05-30 | 1981-12-24 | Sharp Corp | Aging device for sno2 series semiconductor gas sensor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1482584A (en) * | 1973-07-13 | 1977-08-10 | Tokyo Shibaura Electric Co | Moisture responsive resistance element |
JPS5320318B2 (US06534493-20030318-C00184.png) * | 1973-12-20 | 1978-06-26 | ||
GB1477082A (en) * | 1974-10-15 | 1977-06-22 | Tokyo Shibaura Electric Co | Gas-sensing material |
WO1980001610A1 (en) * | 1979-01-31 | 1980-08-07 | Rosemount Eng Co Ltd | A method of detecting oxygen and an oxygen sensor therefor |
JPS55162046A (en) * | 1979-06-05 | 1980-12-17 | Matsushita Electric Ind Co Ltd | Temperature compensating element for oxygen concentration detector |
JPS57118150A (en) * | 1981-01-14 | 1982-07-22 | Nec Corp | Gas detecting element |
US4324761A (en) * | 1981-04-01 | 1982-04-13 | General Electric Company | Hydrogen detector |
-
1982
- 1982-12-28 JP JP57227568A patent/JPS59120945A/ja active Granted
-
1983
- 1983-12-22 DE DE8383307857T patent/DE3379285D1/de not_active Expired
- 1983-12-22 US US06/564,446 patent/US4608549A/en not_active Expired - Lifetime
- 1983-12-22 EP EP83307857A patent/EP0115183B1/en not_active Expired
- 1983-12-22 CA CA000444091A patent/CA1204474A/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56168542A (en) * | 1980-05-30 | 1981-12-24 | Sharp Corp | Aging device for sno2 series semiconductor gas sensor |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63114629U (US06534493-20030318-C00184.png) * | 1987-01-21 | 1988-07-23 | ||
JPS63124924U (US06534493-20030318-C00184.png) * | 1987-02-05 | 1988-08-15 | ||
JPH0318833U (US06534493-20030318-C00184.png) * | 1989-02-28 | 1991-02-25 | ||
JP4532671B2 (ja) * | 1999-06-01 | 2010-08-25 | 新コスモス電機株式会社 | 水素ガス検知素子 |
JPWO2004111628A1 (ja) * | 2003-06-12 | 2006-07-20 | 理研計器株式会社 | 接触燃焼式ガスセンサ、及びその製造方法 |
JP4627037B2 (ja) * | 2003-06-12 | 2011-02-09 | 理研計器株式会社 | 接触燃焼式ガスセンサ |
JP2016523748A (ja) * | 2013-03-20 | 2016-08-12 | テクニップ フランス | 低温流体処理設備のための保護パネル、並びに、関連するアセンブリ、設備及び方法 |
JP2017173307A (ja) * | 2016-03-18 | 2017-09-28 | パナソニックIpマネジメント株式会社 | 水素センサ及び燃料電池自動車、並びに水素検出方法。 |
Also Published As
Publication number | Publication date |
---|---|
EP0115183A3 (en) | 1985-09-25 |
JPS59120945A (ja) | 1984-07-12 |
CA1204474A (en) | 1986-05-13 |
US4608549A (en) | 1986-08-26 |
EP0115183B1 (en) | 1989-03-01 |
DE3379285D1 (en) | 1989-04-06 |
EP0115183A2 (en) | 1984-08-08 |
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