JPS6130752B2 - - Google Patents

Info

Publication number
JPS6130752B2
JPS6130752B2 JP53106368A JP10636878A JPS6130752B2 JP S6130752 B2 JPS6130752 B2 JP S6130752B2 JP 53106368 A JP53106368 A JP 53106368A JP 10636878 A JP10636878 A JP 10636878A JP S6130752 B2 JPS6130752 B2 JP S6130752B2
Authority
JP
Japan
Prior art keywords
type region
iil
type
transistor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53106368A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5533072A (en
Inventor
Hiroshi Saikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10636878A priority Critical patent/JPS5533072A/ja
Publication of JPS5533072A publication Critical patent/JPS5533072A/ja
Publication of JPS6130752B2 publication Critical patent/JPS6130752B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • H10D84/658Integrated injection logic integrated in combination with analog structures

Landscapes

  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP10636878A 1978-08-30 1978-08-30 Semiconductor device Granted JPS5533072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10636878A JPS5533072A (en) 1978-08-30 1978-08-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10636878A JPS5533072A (en) 1978-08-30 1978-08-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5533072A JPS5533072A (en) 1980-03-08
JPS6130752B2 true JPS6130752B2 (enrdf_load_stackoverflow) 1986-07-15

Family

ID=14431772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10636878A Granted JPS5533072A (en) 1978-08-30 1978-08-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5533072A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4984024A (en) * 1988-05-11 1991-01-08 Ricoh Company, Ltd. Image transfer unit for image recording apparatus

Also Published As

Publication number Publication date
JPS5533072A (en) 1980-03-08

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