JPS6130752B2 - - Google Patents

Info

Publication number
JPS6130752B2
JPS6130752B2 JP53106368A JP10636878A JPS6130752B2 JP S6130752 B2 JPS6130752 B2 JP S6130752B2 JP 53106368 A JP53106368 A JP 53106368A JP 10636878 A JP10636878 A JP 10636878A JP S6130752 B2 JPS6130752 B2 JP S6130752B2
Authority
JP
Japan
Prior art keywords
type region
iil
type
transistor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53106368A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5533072A (en
Inventor
Hiroshi Saikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10636878A priority Critical patent/JPS5533072A/ja
Publication of JPS5533072A publication Critical patent/JPS5533072A/ja
Publication of JPS6130752B2 publication Critical patent/JPS6130752B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP10636878A 1978-08-30 1978-08-30 Semiconductor device Granted JPS5533072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10636878A JPS5533072A (en) 1978-08-30 1978-08-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10636878A JPS5533072A (en) 1978-08-30 1978-08-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5533072A JPS5533072A (en) 1980-03-08
JPS6130752B2 true JPS6130752B2 (enrdf_load_stackoverflow) 1986-07-15

Family

ID=14431772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10636878A Granted JPS5533072A (en) 1978-08-30 1978-08-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5533072A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4984024A (en) * 1988-05-11 1991-01-08 Ricoh Company, Ltd. Image transfer unit for image recording apparatus

Also Published As

Publication number Publication date
JPS5533072A (en) 1980-03-08

Similar Documents

Publication Publication Date Title
US3922565A (en) Monolithically integrable digital basic circuit
JPH04245478A (ja) 光半導体装置
US4210925A (en) I2 L Integrated circuit and process of fabrication
US3978515A (en) Integrated injection logic using oxide isolation
US4069495A (en) Semiconductor device for integrated injection logic
GB1533156A (en) Semiconductor integrated circuits
JPS6130752B2 (enrdf_load_stackoverflow)
GB1252803A (enrdf_load_stackoverflow)
US4470061A (en) Integrated injection logic
US4979011A (en) SCR structure for fast turn-on switching
JPS587066B2 (ja) 半導体装置
US5016079A (en) Integrated injection logic gate with heavily doped diffusion
GB1315583A (en) Integrated circuit
CA1097408A (en) Inverter in an integrated injection logic structure
EP0126879B1 (en) Integrated circuit arrangement
JPS6022504B2 (ja) 半導体装置の製造方法
JPH04114469A (ja) 回路内蔵受光素子
US4119998A (en) Integrated injection logic with both grid and internal double-diffused injectors
JPH0618210B2 (ja) ヘテロ接合バイポーラトランジスタ
JPS6025904B2 (ja) 半導体装置の製造方法
JPS63288055A (ja) 半導体装置
JPS6123658B2 (enrdf_load_stackoverflow)
JPS6132823B2 (enrdf_load_stackoverflow)
JPS59181058A (ja) 半導体装置
JPS60187051A (ja) 半導体スイツチング素子