JPS5533072A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5533072A
JPS5533072A JP10636878A JP10636878A JPS5533072A JP S5533072 A JPS5533072 A JP S5533072A JP 10636878 A JP10636878 A JP 10636878A JP 10636878 A JP10636878 A JP 10636878A JP S5533072 A JPS5533072 A JP S5533072A
Authority
JP
Japan
Prior art keywords
type layers
type
semiconductor device
transistor
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10636878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6130752B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Saikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10636878A priority Critical patent/JPS5533072A/ja
Publication of JPS5533072A publication Critical patent/JPS5533072A/ja
Publication of JPS6130752B2 publication Critical patent/JPS6130752B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP10636878A 1978-08-30 1978-08-30 Semiconductor device Granted JPS5533072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10636878A JPS5533072A (en) 1978-08-30 1978-08-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10636878A JPS5533072A (en) 1978-08-30 1978-08-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5533072A true JPS5533072A (en) 1980-03-08
JPS6130752B2 JPS6130752B2 (enrdf_load_stackoverflow) 1986-07-15

Family

ID=14431772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10636878A Granted JPS5533072A (en) 1978-08-30 1978-08-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5533072A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4984024A (en) * 1988-05-11 1991-01-08 Ricoh Company, Ltd. Image transfer unit for image recording apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4984024A (en) * 1988-05-11 1991-01-08 Ricoh Company, Ltd. Image transfer unit for image recording apparatus

Also Published As

Publication number Publication date
JPS6130752B2 (enrdf_load_stackoverflow) 1986-07-15

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