JPS6130417B2 - - Google Patents
Info
- Publication number
- JPS6130417B2 JPS6130417B2 JP12754277A JP12754277A JPS6130417B2 JP S6130417 B2 JPS6130417 B2 JP S6130417B2 JP 12754277 A JP12754277 A JP 12754277A JP 12754277 A JP12754277 A JP 12754277A JP S6130417 B2 JPS6130417 B2 JP S6130417B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- etching
- gas plasma
- aluminum
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- 239000011856 silicon-based particle Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 20
- 239000007789 gas Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- -1 CF 4 containing O 2 Chemical compound 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12754277A JPS5461465A (en) | 1977-10-26 | 1977-10-26 | Method of fabricating semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12754277A JPS5461465A (en) | 1977-10-26 | 1977-10-26 | Method of fabricating semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5461465A JPS5461465A (en) | 1979-05-17 |
| JPS6130417B2 true JPS6130417B2 (enrdf_load_stackoverflow) | 1986-07-14 |
Family
ID=14962576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12754277A Granted JPS5461465A (en) | 1977-10-26 | 1977-10-26 | Method of fabricating semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5461465A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0238314U (enrdf_load_stackoverflow) * | 1988-09-08 | 1990-03-14 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142654A (en) * | 1980-04-09 | 1981-11-07 | Toshiba Corp | Manufacture of semiconductor device |
-
1977
- 1977-10-26 JP JP12754277A patent/JPS5461465A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0238314U (enrdf_load_stackoverflow) * | 1988-09-08 | 1990-03-14 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5461465A (en) | 1979-05-17 |
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