JPS6130026B2 - - Google Patents

Info

Publication number
JPS6130026B2
JPS6130026B2 JP4885380A JP4885380A JPS6130026B2 JP S6130026 B2 JPS6130026 B2 JP S6130026B2 JP 4885380 A JP4885380 A JP 4885380A JP 4885380 A JP4885380 A JP 4885380A JP S6130026 B2 JPS6130026 B2 JP S6130026B2
Authority
JP
Japan
Prior art keywords
vapor deposition
deposited
shutter
vapor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4885380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56146879A (en
Inventor
Toshuki Kaeryama
Keisuke Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu General Ltd
Original Assignee
Fujitsu General Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu General Ltd filed Critical Fujitsu General Ltd
Priority to JP4885380A priority Critical patent/JPS56146879A/ja
Publication of JPS56146879A publication Critical patent/JPS56146879A/ja
Publication of JPS6130026B2 publication Critical patent/JPS6130026B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP4885380A 1980-04-14 1980-04-14 Vapor deposition method Granted JPS56146879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4885380A JPS56146879A (en) 1980-04-14 1980-04-14 Vapor deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4885380A JPS56146879A (en) 1980-04-14 1980-04-14 Vapor deposition method

Publications (2)

Publication Number Publication Date
JPS56146879A JPS56146879A (en) 1981-11-14
JPS6130026B2 true JPS6130026B2 (enrdf_load_stackoverflow) 1986-07-10

Family

ID=12814818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4885380A Granted JPS56146879A (en) 1980-04-14 1980-04-14 Vapor deposition method

Country Status (1)

Country Link
JP (1) JPS56146879A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2476951C1 (ru) * 2011-07-27 2013-02-27 Государственное образовательное учреждение высшего профессионального образования "Саратовский государственный технический университет" (СГТУ) Микропрофиль структуры вакуумной интегральной свч-схемы и способ его получения

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102160155B1 (ko) * 2013-03-14 2020-09-28 삼성디스플레이 주식회사 진공증착기
CN107365962A (zh) * 2017-08-29 2017-11-21 京东方科技集团股份有限公司 一种限制结构、限制装置及其调节方法和蒸镀系统

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2476951C1 (ru) * 2011-07-27 2013-02-27 Государственное образовательное учреждение высшего профессионального образования "Саратовский государственный технический университет" (СГТУ) Микропрофиль структуры вакуумной интегральной свч-схемы и способ его получения

Also Published As

Publication number Publication date
JPS56146879A (en) 1981-11-14

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