JPS6129555B2 - - Google Patents
Info
- Publication number
- JPS6129555B2 JPS6129555B2 JP13433676A JP13433676A JPS6129555B2 JP S6129555 B2 JPS6129555 B2 JP S6129555B2 JP 13433676 A JP13433676 A JP 13433676A JP 13433676 A JP13433676 A JP 13433676A JP S6129555 B2 JPS6129555 B2 JP S6129555B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- active layer
- gate
- source
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
- 238000000605 extraction Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13433676A JPS5358780A (en) | 1976-11-08 | 1976-11-08 | Field effect type transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13433676A JPS5358780A (en) | 1976-11-08 | 1976-11-08 | Field effect type transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5358780A JPS5358780A (en) | 1978-05-26 |
| JPS6129555B2 true JPS6129555B2 (de) | 1986-07-07 |
Family
ID=15125952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13433676A Granted JPS5358780A (en) | 1976-11-08 | 1976-11-08 | Field effect type transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5358780A (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63217728A (ja) * | 1987-03-05 | 1988-09-09 | Kokusai Electric Co Ltd | コ−ドレス電話システムにおける着呼呼出音鳴動方式 |
| JPH03245642A (ja) * | 1990-02-23 | 1991-11-01 | Nec Corp | 無線電話装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62251121A (ja) * | 1986-04-25 | 1987-10-31 | Diafoil Co Ltd | ポリフエニレンスルフイド未延伸フイルムの製造法 |
-
1976
- 1976-11-08 JP JP13433676A patent/JPS5358780A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63217728A (ja) * | 1987-03-05 | 1988-09-09 | Kokusai Electric Co Ltd | コ−ドレス電話システムにおける着呼呼出音鳴動方式 |
| JPH03245642A (ja) * | 1990-02-23 | 1991-11-01 | Nec Corp | 無線電話装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5358780A (en) | 1978-05-26 |
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