JPH0217935B2 - - Google Patents
Info
- Publication number
- JPH0217935B2 JPH0217935B2 JP43185A JP43185A JPH0217935B2 JP H0217935 B2 JPH0217935 B2 JP H0217935B2 JP 43185 A JP43185 A JP 43185A JP 43185 A JP43185 A JP 43185A JP H0217935 B2 JPH0217935 B2 JP H0217935B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- gate
- thickness
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- 230000005669 field effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP43185A JPS61160977A (ja) | 1985-01-08 | 1985-01-08 | 電界効果トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP43185A JPS61160977A (ja) | 1985-01-08 | 1985-01-08 | 電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61160977A JPS61160977A (ja) | 1986-07-21 |
| JPH0217935B2 true JPH0217935B2 (de) | 1990-04-24 |
Family
ID=11473621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP43185A Granted JPS61160977A (ja) | 1985-01-08 | 1985-01-08 | 電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61160977A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4872038A (en) * | 1988-02-24 | 1989-10-03 | Arizona Board Of Regents | Lateral surface superlattice having negative differential conductivity novel process for producing same |
| US5023671A (en) * | 1989-03-27 | 1991-06-11 | International Business Machines Corporation | Microstructures which provide superlattice effects and one-dimensional carrier gas channels |
-
1985
- 1985-01-08 JP JP43185A patent/JPS61160977A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61160977A (ja) | 1986-07-21 |
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