JPS6129554B2 - - Google Patents
Info
- Publication number
- JPS6129554B2 JPS6129554B2 JP51153373A JP15337376A JPS6129554B2 JP S6129554 B2 JPS6129554 B2 JP S6129554B2 JP 51153373 A JP51153373 A JP 51153373A JP 15337376 A JP15337376 A JP 15337376A JP S6129554 B2 JPS6129554 B2 JP S6129554B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- impurity region
- concentration
- impurity
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15337376A JPS5378181A (en) | 1976-12-22 | 1976-12-22 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15337376A JPS5378181A (en) | 1976-12-22 | 1976-12-22 | Semiconductor device and its manufacture |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59234914A Division JPS60121771A (ja) | 1984-11-09 | 1984-11-09 | 半導体装置 |
| JP11463687A Division JPS6323362A (ja) | 1987-05-13 | 1987-05-13 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5378181A JPS5378181A (en) | 1978-07-11 |
| JPS6129554B2 true JPS6129554B2 (enrdf_load_stackoverflow) | 1986-07-07 |
Family
ID=15561028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15337376A Granted JPS5378181A (en) | 1976-12-22 | 1976-12-22 | Semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5378181A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5885526A (ja) * | 1981-11-17 | 1983-05-21 | Sumitomo Electric Ind Ltd | 半導体結晶への不純物ド−ピング方法 |
| JPS58123723A (ja) * | 1982-01-19 | 1983-07-23 | Sumitomo Electric Ind Ltd | 半導体結晶への不純物ド−ピング方法 |
| JPS60121771A (ja) * | 1984-11-09 | 1985-06-29 | Hitachi Ltd | 半導体装置 |
| US4878100A (en) * | 1988-01-19 | 1989-10-31 | Texas Instruments Incorporated | Triple-implanted drain in transistor made by oxide sidewall-spacer method |
| US5045486A (en) * | 1990-06-26 | 1991-09-03 | At&T Bell Laboratories | Transistor fabrication method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5119980A (ja) * | 1974-08-12 | 1976-02-17 | Fujitsu Ltd | Zetsuengeetogatadenkaikokatoranjisutano seizohoho |
-
1976
- 1976-12-22 JP JP15337376A patent/JPS5378181A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5378181A (en) | 1978-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR920009745B1 (ko) | 반도체장치의 제조방법 | |
| JPS61179567A (ja) | 自己整合積層ｃｍｏｓ構造の製造方法 | |
| KR940008571B1 (ko) | 반도체장치의 제조방법 | |
| JPS6129554B2 (enrdf_load_stackoverflow) | ||
| JPS60163452A (ja) | バイポーラデバイスおよび電界効果デバイスを有する集積回路およびその製造方法 | |
| JPS62160770A (ja) | 絶縁ゲート型電界効果トランジスタおよびその製造方法 | |
| JPS6325977A (ja) | 半導体集積回路装置の製造方法 | |
| JPS6323362A (ja) | 半導体装置の製造方法 | |
| JPH05102067A (ja) | 半導体装置の製造方法 | |
| JPS6025028B2 (ja) | 半導体装置の製造方法 | |
| JP3259479B2 (ja) | Ｍｏｓ型半導体装置およびその製造方法 | |
| JPH08213601A (ja) | 半導体装置とその製造方法 | |
| JPS60121771A (ja) | 半導体装置 | |
| JPH05267338A (ja) | 半導体装置の製造方法 | |
| JPS60136377A (ja) | 絶縁ゲ−ト半導体装置の製造法 | |
| JPH0438834A (ja) | Ｍｏｓトランジスタの製造方法 | |
| JPH01117362A (ja) | 半導体集積回路装置の製造方法 | |
| JP3008579B2 (ja) | 半導体装置の製造方法 | |
| KR970005147B1 (ko) | 반도체 장치의 얕은 접합 형성 방법 | |
| JPH03153081A (ja) | 電界効果型トランジスタおよびその製造方法 | |
| JPS5939901B2 (ja) | 半導体装置の製造方法 | |
| JPS61105873A (ja) | 半導体装置の製造方法 | |
| JPS61105872A (ja) | 半導体装置 | |
| JPH06140503A (ja) | 半導体装置とその製造方法 | |
| JPH02240934A (ja) | Ｍｏｓ型半導体装置の製造方法 |