JPS6128228B2 - - Google Patents
Info
- Publication number
- JPS6128228B2 JPS6128228B2 JP9605376A JP9605376A JPS6128228B2 JP S6128228 B2 JPS6128228 B2 JP S6128228B2 JP 9605376 A JP9605376 A JP 9605376A JP 9605376 A JP9605376 A JP 9605376A JP S6128228 B2 JPS6128228 B2 JP S6128228B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conductor layer
- bonding
- ohmic
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005275 alloying Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- -1 Ge/Ag Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9605376A JPS5322362A (en) | 1976-08-13 | 1976-08-13 | Semiconductor d evice |
| NL7609676A NL7609676A (nl) | 1975-09-03 | 1976-08-31 | Verbindingsaansluiting voor een halfgeleider- inrichting. |
| DE2639373A DE2639373B2 (de) | 1975-09-03 | 1976-09-01 | Anschlußfleck für ein Halbleiterbauelement |
| GB36641/76A GB1509160A (en) | 1975-09-03 | 1976-09-03 | Bonding pad for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9605376A JPS5322362A (en) | 1976-08-13 | 1976-08-13 | Semiconductor d evice |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5322362A JPS5322362A (en) | 1978-03-01 |
| JPS6128228B2 true JPS6128228B2 (enrdf_load_stackoverflow) | 1986-06-28 |
Family
ID=14154704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9605376A Granted JPS5322362A (en) | 1975-09-03 | 1976-08-13 | Semiconductor d evice |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5322362A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55147746U (enrdf_load_stackoverflow) * | 1979-04-10 | 1980-10-23 |
-
1976
- 1976-08-13 JP JP9605376A patent/JPS5322362A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5322362A (en) | 1978-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7380310B2 (ja) | 電界効果トランジスタ及び半導体装置 | |
| US4141135A (en) | Semiconductor process using lapped substrate and lapped low resistivity semiconductor carrier | |
| US4695869A (en) | GAAS semiconductor device | |
| JPS5879773A (ja) | 電界効果トランジスタ | |
| JPS6128228B2 (enrdf_load_stackoverflow) | ||
| US5329154A (en) | Compound semiconductor integrated circuit having improved electrode bonding arrangements | |
| JPS6020568A (ja) | 半導体装置 | |
| JPS62150869A (ja) | 化合物半導体装置 | |
| JP2950285B2 (ja) | 半導体素子及びその電極の形成方法 | |
| JPS5842631B2 (ja) | 接合ゲ−ト型電界効果トランジスタの製造方法 | |
| JPH05243396A (ja) | 半導体装置及びその製造方法 | |
| JPH01102969A (ja) | 化合物半導体素子 | |
| JP2737654B2 (ja) | 集積回路の製造方法 | |
| JPS62122255A (ja) | 化合物半導体装置 | |
| JPS6159782A (ja) | 半導体装置 | |
| JPS60200570A (ja) | 電子装置 | |
| JPH11307577A (ja) | 半導体装置 | |
| JP3018677B2 (ja) | 半導体装置の製造方法 | |
| JPS62229955A (ja) | 半導体装置 | |
| JPS61220462A (ja) | 化合物半導体装置 | |
| JP2513455B2 (ja) | 半導体装置の製造方法 | |
| JPS58134428A (ja) | 半導体装置の製造方法 | |
| JPS641050B2 (enrdf_load_stackoverflow) | ||
| JPH05299634A (ja) | 化合物半導体素子およびその製法 | |
| JPS6261372A (ja) | ＧａＡｓＬＳＩ用ゲ−トおよびオ−ミツク電極の結合方法 |