JPS61276377A - 電界効果型化合物半導体装置 - Google Patents

電界効果型化合物半導体装置

Info

Publication number
JPS61276377A
JPS61276377A JP60118205A JP11820585A JPS61276377A JP S61276377 A JPS61276377 A JP S61276377A JP 60118205 A JP60118205 A JP 60118205A JP 11820585 A JP11820585 A JP 11820585A JP S61276377 A JPS61276377 A JP S61276377A
Authority
JP
Japan
Prior art keywords
layer
gaas
channel
semiconductor device
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60118205A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0156544B2 (cs
Inventor
Masahisa Suzuki
雅久 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60118205A priority Critical patent/JPS61276377A/ja
Publication of JPS61276377A publication Critical patent/JPS61276377A/ja
Publication of JPH0156544B2 publication Critical patent/JPH0156544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material

Landscapes

  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP60118205A 1985-05-31 1985-05-31 電界効果型化合物半導体装置 Granted JPS61276377A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60118205A JPS61276377A (ja) 1985-05-31 1985-05-31 電界効果型化合物半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60118205A JPS61276377A (ja) 1985-05-31 1985-05-31 電界効果型化合物半導体装置

Publications (2)

Publication Number Publication Date
JPS61276377A true JPS61276377A (ja) 1986-12-06
JPH0156544B2 JPH0156544B2 (cs) 1989-11-30

Family

ID=14730795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60118205A Granted JPS61276377A (ja) 1985-05-31 1985-05-31 電界効果型化合物半導体装置

Country Status (1)

Country Link
JP (1) JPS61276377A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01173760A (ja) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd ヘテロ接合電界効果トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01173760A (ja) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd ヘテロ接合電界効果トランジスタ

Also Published As

Publication number Publication date
JPH0156544B2 (cs) 1989-11-30

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