JPH0156544B2 - - Google Patents
Info
- Publication number
- JPH0156544B2 JPH0156544B2 JP60118205A JP11820585A JPH0156544B2 JP H0156544 B2 JPH0156544 B2 JP H0156544B2 JP 60118205 A JP60118205 A JP 60118205A JP 11820585 A JP11820585 A JP 11820585A JP H0156544 B2 JPH0156544 B2 JP H0156544B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- channel
- algaas
- vth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
- H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
Landscapes
- Recrystallisation Techniques (AREA)
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60118205A JPS61276377A (ja) | 1985-05-31 | 1985-05-31 | 電界効果型化合物半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60118205A JPS61276377A (ja) | 1985-05-31 | 1985-05-31 | 電界効果型化合物半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61276377A JPS61276377A (ja) | 1986-12-06 |
| JPH0156544B2 true JPH0156544B2 (cs) | 1989-11-30 |
Family
ID=14730795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60118205A Granted JPS61276377A (ja) | 1985-05-31 | 1985-05-31 | 電界効果型化合物半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61276377A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01173760A (ja) * | 1987-12-28 | 1989-07-10 | Matsushita Electric Ind Co Ltd | ヘテロ接合電界効果トランジスタ |
-
1985
- 1985-05-31 JP JP60118205A patent/JPS61276377A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61276377A (ja) | 1986-12-06 |
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