JPS61276252A - Ｃｍｏｓ半導体装置 - Google Patents

Ｃｍｏｓ半導体装置

Info

Publication number
JPS61276252A
JPS61276252A JP60117112A JP11711285A JPS61276252A JP S61276252 A JPS61276252 A JP S61276252A JP 60117112 A JP60117112 A JP 60117112A JP 11711285 A JP11711285 A JP 11711285A JP S61276252 A JPS61276252 A JP S61276252A
Authority
JP
Japan
Prior art keywords
diffusion layer
type
well
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60117112A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0344425B2 (enrdf_load_stackoverflow
Inventor
Junichi Takahashi
順一 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60117112A priority Critical patent/JPS61276252A/ja
Publication of JPS61276252A publication Critical patent/JPS61276252A/ja
Publication of JPH0344425B2 publication Critical patent/JPH0344425B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60117112A 1985-05-30 1985-05-30 Ｃｍｏｓ半導体装置 Granted JPS61276252A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60117112A JPS61276252A (ja) 1985-05-30 1985-05-30 Ｃｍｏｓ半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60117112A JPS61276252A (ja) 1985-05-30 1985-05-30 Ｃｍｏｓ半導体装置

Publications (2)

Publication Number Publication Date
JPS61276252A true JPS61276252A (ja) 1986-12-06
JPH0344425B2 JPH0344425B2 (enrdf_load_stackoverflow) 1991-07-05

Family

ID=14703712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60117112A Granted JPS61276252A (ja) 1985-05-30 1985-05-30 Ｃｍｏｓ半導体装置

Country Status (1)

Country Link
JP (1) JPS61276252A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02307272A (ja) * 1989-05-22 1990-12-20 Matsushita Electron Corp 半導体装置
WO1996032747A1 (en) * 1995-04-12 1996-10-17 National Semiconductor Corporation Structure and fabrication of mosfet having multi-part channel
US6020227A (en) * 1995-09-12 2000-02-01 National Semiconductor Corporation Fabrication of multiple field-effect transistor structure having local threshold-adjust doping

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02307272A (ja) * 1989-05-22 1990-12-20 Matsushita Electron Corp 半導体装置
WO1996032747A1 (en) * 1995-04-12 1996-10-17 National Semiconductor Corporation Structure and fabrication of mosfet having multi-part channel
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
US6078082A (en) * 1995-04-12 2000-06-20 National Semiconductor Corporation Field-effect transistor having multi-part channel
US6576966B1 (en) 1995-04-12 2003-06-10 National Semiconductor Corporation Field-effect transistor having multi-part channel
US6020227A (en) * 1995-09-12 2000-02-01 National Semiconductor Corporation Fabrication of multiple field-effect transistor structure having local threshold-adjust doping
US6127700A (en) * 1995-09-12 2000-10-03 National Semiconductor Corporation Field-effect transistor having local threshold-adjust doping

Also Published As

Publication number Publication date
JPH0344425B2 (enrdf_load_stackoverflow) 1991-07-05

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Legal Events

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