JPS6126259A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6126259A
JPS6126259A JP14685084A JP14685084A JPS6126259A JP S6126259 A JPS6126259 A JP S6126259A JP 14685084 A JP14685084 A JP 14685084A JP 14685084 A JP14685084 A JP 14685084A JP S6126259 A JPS6126259 A JP S6126259A
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
mask
hole
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14685084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0576769B2 (enrdf_load_stackoverflow
Inventor
Shigeo Kuroda
黒田 重雄
Motonori Kawaji
河路 幹規
Toshihiko Takakura
俊彦 高倉
Tetsushi Sakai
徹志 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP14685084A priority Critical patent/JPS6126259A/ja
Publication of JPS6126259A publication Critical patent/JPS6126259A/ja
Publication of JPH0576769B2 publication Critical patent/JPH0576769B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP14685084A 1984-07-17 1984-07-17 半導体装置の製造方法 Granted JPS6126259A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14685084A JPS6126259A (ja) 1984-07-17 1984-07-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14685084A JPS6126259A (ja) 1984-07-17 1984-07-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6126259A true JPS6126259A (ja) 1986-02-05
JPH0576769B2 JPH0576769B2 (enrdf_load_stackoverflow) 1993-10-25

Family

ID=15416953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14685084A Granted JPS6126259A (ja) 1984-07-17 1984-07-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6126259A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0576769B2 (enrdf_load_stackoverflow) 1993-10-25

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