JPS61245164A - パタ−ン修正装置 - Google Patents
パタ−ン修正装置Info
- Publication number
- JPS61245164A JPS61245164A JP8727685A JP8727685A JPS61245164A JP S61245164 A JPS61245164 A JP S61245164A JP 8727685 A JP8727685 A JP 8727685A JP 8727685 A JP8727685 A JP 8727685A JP S61245164 A JPS61245164 A JP S61245164A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- ion beam
- pattern
- gas
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 33
- 230000001678 irradiating effect Effects 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 238000007664 blowing Methods 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 10
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 8
- 230000001133 acceleration Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- -1 Gallium ions Chemical class 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 206010064127 Solar lentigo Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005078 molybdenum compound Substances 0.000 description 1
- 150000002752 molybdenum compounds Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8727685A JPS61245164A (ja) | 1985-04-23 | 1985-04-23 | パタ−ン修正装置 |
EP86303036A EP0199585B1 (en) | 1985-04-23 | 1986-04-22 | Apparatus for depositing electrically conductive and/or electrically insulating material on a workpiece |
DE8686303036T DE3672378D1 (de) | 1985-04-23 | 1986-04-22 | Vorrichtung zur abscheidung eines elektrisch leitenden und/oder nichtleitenden materials auf einem gegenstand. |
US07/244,128 US5086230A (en) | 1985-04-23 | 1988-09-14 | Apparatus for forming, correcting pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8727685A JPS61245164A (ja) | 1985-04-23 | 1985-04-23 | パタ−ン修正装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61245164A true JPS61245164A (ja) | 1986-10-31 |
JPS6325660B2 JPS6325660B2 (enrdf_load_stackoverflow) | 1988-05-26 |
Family
ID=13910248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8727685A Granted JPS61245164A (ja) | 1985-04-23 | 1985-04-23 | パタ−ン修正装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61245164A (enrdf_load_stackoverflow) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63153841A (ja) * | 1986-12-18 | 1988-06-27 | Agency Of Ind Science & Technol | 高密度線電極の製造方法 |
JPS63237438A (ja) * | 1987-03-25 | 1988-10-03 | Mitsubishi Electric Corp | 半導体装置の電極形成方法 |
JPS6435913A (en) * | 1987-07-31 | 1989-02-07 | Hitachi Ltd | Method and device for correcting defect of device |
JPS6471149A (en) * | 1987-09-11 | 1989-03-16 | Hitachi Ltd | Formation of wiring and device therefor |
JPH01140742A (ja) * | 1987-11-27 | 1989-06-01 | Hitachi Ltd | イオンビーム加工方法 |
JPH01215022A (ja) * | 1988-02-24 | 1989-08-29 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966124A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 表面処理方法および装置 |
JPS59168652A (ja) * | 1983-03-16 | 1984-09-22 | Hitachi Ltd | 素子修正方法及びその装置 |
JPS6322577A (ja) * | 1986-06-25 | 1988-01-30 | フアルミタリア・カルロ・エルバ・エツセ・ピ−・ア− | t−ブチルエルゴリン誘導体 |
-
1985
- 1985-04-23 JP JP8727685A patent/JPS61245164A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966124A (ja) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | 表面処理方法および装置 |
JPS59168652A (ja) * | 1983-03-16 | 1984-09-22 | Hitachi Ltd | 素子修正方法及びその装置 |
JPS6322577A (ja) * | 1986-06-25 | 1988-01-30 | フアルミタリア・カルロ・エルバ・エツセ・ピ−・ア− | t−ブチルエルゴリン誘導体 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63153841A (ja) * | 1986-12-18 | 1988-06-27 | Agency Of Ind Science & Technol | 高密度線電極の製造方法 |
JPS63237438A (ja) * | 1987-03-25 | 1988-10-03 | Mitsubishi Electric Corp | 半導体装置の電極形成方法 |
JPS6435913A (en) * | 1987-07-31 | 1989-02-07 | Hitachi Ltd | Method and device for correcting defect of device |
JPS6471149A (en) * | 1987-09-11 | 1989-03-16 | Hitachi Ltd | Formation of wiring and device therefor |
JPH01140742A (ja) * | 1987-11-27 | 1989-06-01 | Hitachi Ltd | イオンビーム加工方法 |
JPH01215022A (ja) * | 1988-02-24 | 1989-08-29 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6325660B2 (enrdf_load_stackoverflow) | 1988-05-26 |
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