JPS6124287A - 光導電性薄膜の製造方法 - Google Patents

光導電性薄膜の製造方法

Info

Publication number
JPS6124287A
JPS6124287A JP59146404A JP14640484A JPS6124287A JP S6124287 A JPS6124287 A JP S6124287A JP 59146404 A JP59146404 A JP 59146404A JP 14640484 A JP14640484 A JP 14640484A JP S6124287 A JPS6124287 A JP S6124287A
Authority
JP
Japan
Prior art keywords
thin film
temperature
film
cdse
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59146404A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476223B2 (enrdf_load_stackoverflow
Inventor
Kosuke Ikeda
光佑 池田
Yoichi Harada
洋一 原田
Takahiro Nishikura
西倉　孝弘
Toshio Yamashita
敏夫 山下
Noboru Yoshigami
由上　登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59146404A priority Critical patent/JPS6124287A/ja
Publication of JPS6124287A publication Critical patent/JPS6124287A/ja
Publication of JPH0476223B2 publication Critical patent/JPH0476223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe

Landscapes

  • Light Receiving Elements (AREA)
JP59146404A 1984-07-13 1984-07-13 光導電性薄膜の製造方法 Granted JPS6124287A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59146404A JPS6124287A (ja) 1984-07-13 1984-07-13 光導電性薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59146404A JPS6124287A (ja) 1984-07-13 1984-07-13 光導電性薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6124287A true JPS6124287A (ja) 1986-02-01
JPH0476223B2 JPH0476223B2 (enrdf_load_stackoverflow) 1992-12-03

Family

ID=15406933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59146404A Granted JPS6124287A (ja) 1984-07-13 1984-07-13 光導電性薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS6124287A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198271A (ja) * 1987-10-12 1989-04-17 Matsushita Electric Ind Co Ltd 光センサの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198271A (ja) * 1987-10-12 1989-04-17 Matsushita Electric Ind Co Ltd 光センサの製造方法

Also Published As

Publication number Publication date
JPH0476223B2 (enrdf_load_stackoverflow) 1992-12-03

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