JPS6124042A - 磁気光学記憶素子の製造方法 - Google Patents
磁気光学記憶素子の製造方法Info
- Publication number
- JPS6124042A JPS6124042A JP14623484A JP14623484A JPS6124042A JP S6124042 A JPS6124042 A JP S6124042A JP 14623484 A JP14623484 A JP 14623484A JP 14623484 A JP14623484 A JP 14623484A JP S6124042 A JPS6124042 A JP S6124042A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent dielectric
- dielectric film
- refractive index
- rare earth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003860 storage Methods 0.000 title abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 109
- 239000010409 thin film Substances 0.000 claims description 26
- 229910052723 transition metal Inorganic materials 0.000 claims description 23
- -1 rare earth transition metal Chemical class 0.000 claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 12
- 150000004767 nitrides Chemical class 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 229920001296 polysiloxane Polymers 0.000 abstract description 2
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 3
- 150000002910 rare earth metals Chemical class 0.000 abstract 3
- 230000007704 transition Effects 0.000 abstract 3
- 238000010276 construction Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 8
- 230000005374 Kerr effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
- G11B11/10589—Details
- G11B11/10593—Details for improving read-out properties, e.g. polarisation of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14623484A JPS6124042A (ja) | 1984-07-13 | 1984-07-13 | 磁気光学記憶素子の製造方法 |
CA000462506A CA1224270A (en) | 1983-09-16 | 1984-09-05 | Magneto-optic memory element |
US06/648,741 US4610912A (en) | 1983-09-16 | 1984-09-10 | Magneto-optic memory element |
DE8484306341T DE3481878D1 (de) | 1983-09-16 | 1984-09-17 | Magnetooptisches speicherelement. |
EP84306341A EP0139474B1 (en) | 1983-09-16 | 1984-09-17 | Magneto-optic memory element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14623484A JPS6124042A (ja) | 1984-07-13 | 1984-07-13 | 磁気光学記憶素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6124042A true JPS6124042A (ja) | 1986-02-01 |
JPH0422291B2 JPH0422291B2 (enrdf_load_stackoverflow) | 1992-04-16 |
Family
ID=15403136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14623484A Granted JPS6124042A (ja) | 1983-09-16 | 1984-07-13 | 磁気光学記憶素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6124042A (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6226660A (ja) * | 1985-07-26 | 1987-02-04 | Mitsubishi Electric Corp | 磁気光学記憶素子の製造方法 |
JPS62121945A (ja) * | 1985-11-22 | 1987-06-03 | Mitsubishi Electric Corp | 磁気光学記憶素子の製造方法 |
JPS62226452A (ja) * | 1986-03-27 | 1987-10-05 | Nec Corp | 光磁気記録媒体 |
JPS62285255A (ja) * | 1986-06-04 | 1987-12-11 | Konica Corp | 光磁気記録媒体 |
JPS63285738A (ja) * | 1987-05-19 | 1988-11-22 | Canon Inc | 光学的磁気記録媒体 |
JPH0258746A (ja) * | 1988-08-24 | 1990-02-27 | Hitachi Maxell Ltd | 光磁気記録媒体 |
JPH076421A (ja) * | 1993-06-14 | 1995-01-10 | Nec Corp | 光磁気記録媒体 |
-
1984
- 1984-07-13 JP JP14623484A patent/JPS6124042A/ja active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6226660A (ja) * | 1985-07-26 | 1987-02-04 | Mitsubishi Electric Corp | 磁気光学記憶素子の製造方法 |
JPS62121945A (ja) * | 1985-11-22 | 1987-06-03 | Mitsubishi Electric Corp | 磁気光学記憶素子の製造方法 |
JPS62226452A (ja) * | 1986-03-27 | 1987-10-05 | Nec Corp | 光磁気記録媒体 |
JPS62285255A (ja) * | 1986-06-04 | 1987-12-11 | Konica Corp | 光磁気記録媒体 |
JPS63285738A (ja) * | 1987-05-19 | 1988-11-22 | Canon Inc | 光学的磁気記録媒体 |
JPH0258746A (ja) * | 1988-08-24 | 1990-02-27 | Hitachi Maxell Ltd | 光磁気記録媒体 |
JPH076421A (ja) * | 1993-06-14 | 1995-01-10 | Nec Corp | 光磁気記録媒体 |
Also Published As
Publication number | Publication date |
---|---|
JPH0422291B2 (enrdf_load_stackoverflow) | 1992-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |