JPS61234064A - 半導体振動検出装置 - Google Patents

半導体振動検出装置

Info

Publication number
JPS61234064A
JPS61234064A JP60074447A JP7444785A JPS61234064A JP S61234064 A JPS61234064 A JP S61234064A JP 60074447 A JP60074447 A JP 60074447A JP 7444785 A JP7444785 A JP 7444785A JP S61234064 A JPS61234064 A JP S61234064A
Authority
JP
Japan
Prior art keywords
film
semiconductor
cantilever beam
movable piece
vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60074447A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0523068B2 (enExample
Inventor
Shigeo Hoshino
重夫 星野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP60074447A priority Critical patent/JPS61234064A/ja
Priority to DE19863611969 priority patent/DE3611969A1/de
Priority to US06/849,862 priority patent/US4672849A/en
Publication of JPS61234064A publication Critical patent/JPS61234064A/ja
Publication of JPH0523068B2 publication Critical patent/JPH0523068B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
    • G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/40—Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H35/00—Switches operated by change of a physical condition
    • H01H35/14—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S73/00—Measuring and testing
    • Y10S73/01—Vibration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Pressure Sensors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
JP60074447A 1985-04-10 1985-04-10 半導体振動検出装置 Granted JPS61234064A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60074447A JPS61234064A (ja) 1985-04-10 1985-04-10 半導体振動検出装置
DE19863611969 DE3611969A1 (de) 1985-04-10 1986-04-09 Halbleiter-schwingungserfassungsstruktur
US06/849,862 US4672849A (en) 1985-04-10 1986-04-09 Semiconductor vibration detecting structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074447A JPS61234064A (ja) 1985-04-10 1985-04-10 半導体振動検出装置

Publications (2)

Publication Number Publication Date
JPS61234064A true JPS61234064A (ja) 1986-10-18
JPH0523068B2 JPH0523068B2 (enExample) 1993-03-31

Family

ID=13547497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074447A Granted JPS61234064A (ja) 1985-04-10 1985-04-10 半導体振動検出装置

Country Status (3)

Country Link
US (1) US4672849A (enExample)
JP (1) JPS61234064A (enExample)
DE (1) DE3611969A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010204069A (ja) * 2009-03-06 2010-09-16 Advanced Telecommunication Research Institute International センサ装置の製造方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2599833B1 (fr) * 1986-06-10 1992-02-14 Metravib Sa Capteur de grandeurs mecaniques integre sur silicium et procede de fabrication
DE3703946A1 (de) * 1987-02-09 1988-08-18 Fraunhofer Ges Forschung Frequenzselektiver schwingungssensor
GB2215914B (en) * 1988-03-17 1991-07-03 Emi Plc Thorn A microengineered diaphragm pressure switch and a method of manufacture thereof
DE4000903C1 (enExample) * 1990-01-15 1990-08-09 Robert Bosch Gmbh, 7000 Stuttgart, De
US5233213A (en) * 1990-07-14 1993-08-03 Robert Bosch Gmbh Silicon-mass angular acceleration sensor
JP3426295B2 (ja) * 1992-09-25 2003-07-14 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 電子装置を検査する方法および装置
US5559358A (en) * 1993-05-25 1996-09-24 Honeywell Inc. Opto-electro-mechanical device or filter, process for making, and sensors made therefrom
US5982608A (en) * 1998-01-13 1999-11-09 Stmicroelectronics, Inc. Semiconductor variable capacitor
DE19841947C2 (de) * 1998-09-14 2003-02-06 Mu Sen Mikrosystemtechnik Gmbh Verfahren zum Messen von Körperschall zur Verwendung für die technische Diagnostik
US6452502B1 (en) 1998-10-15 2002-09-17 Intel Corporation Method and apparatus for early detection of reliability degradation of electronic devices
US6094144A (en) * 1998-10-15 2000-07-25 Intel Corporation Method and apparatus for early detection of reliability degradation of electronic devices
IL130818A (en) 1999-07-06 2005-07-25 Intercure Ltd Interventive-diagnostic device
EP1538970B1 (en) 2002-08-09 2020-06-17 Intercure Ltd. Generalized metronome for modification of biorhythmic activity
JP4744849B2 (ja) * 2004-11-11 2011-08-10 株式会社東芝 半導体装置
JP4929753B2 (ja) * 2006-02-22 2012-05-09 オムロン株式会社 薄膜構造体の形成方法並びに薄膜構造体、振動センサ、圧力センサ及び加速度センサ
JP4328981B2 (ja) * 2007-01-25 2009-09-09 セイコーエプソン株式会社 圧電振動子の製造方法
US9659717B2 (en) * 2014-02-18 2017-05-23 Analog Devices Global MEMS device with constant capacitance
JP6604626B2 (ja) * 2015-08-21 2019-11-13 国立大学法人東北大学 検出装置
US10830787B2 (en) * 2018-02-20 2020-11-10 General Electric Company Optical accelerometers for use in navigation grade environments

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938621A (ja) * 1982-08-27 1984-03-02 Nissan Motor Co Ltd 振動分析装置
JPH0655655A (ja) * 1992-08-04 1994-03-01 Matsushita Electric Works Ltd 積層板の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010204069A (ja) * 2009-03-06 2010-09-16 Advanced Telecommunication Research Institute International センサ装置の製造方法

Also Published As

Publication number Publication date
JPH0523068B2 (enExample) 1993-03-31
DE3611969C2 (enExample) 1988-04-28
DE3611969A1 (de) 1986-10-16
US4672849A (en) 1987-06-16

Similar Documents

Publication Publication Date Title
JPH0523068B2 (enExample)
US5155061A (en) Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures
EP0102069B1 (en) Vibration analyzing device
US6861276B2 (en) Method for fabricating a single chip multiple range pressure transducer device
US5060526A (en) Laminated semiconductor sensor with vibrating element
JP3367113B2 (ja) 加速度センサ
JP3627761B2 (ja) 半導体力学量センサの製造方法
JPH0750789B2 (ja) 半導体圧力変換装置の製造方法
WO2000022397A1 (fr) Capteur de pression capacitif
EP0870170A2 (en) Micro-electro-mechanics systems (mems)
EP0629286A1 (en) ACTUATORS AND MICROSENSORS IN SOI TECHNOLOGY.
JPH05190872A (ja) 半導体圧力センサおよびその製造方法
JPH1022509A (ja) センサ装置
US5911157A (en) Tunnel effect sensor
JPH05281251A (ja) 加速度センサおよびその製造方法
JPWO2002101836A1 (ja) 半導体装置およびその製造方法
JP3331648B2 (ja) 半導体加速度センサ
JPH08262039A (ja) 走査型プローブ顕微鏡
JP3314631B2 (ja) 振動式トランスデューサとその製造方法
JP3343901B2 (ja) 振動式トランスデューサとその製造方法
CN110589755A (zh) 一种嵌入多晶硅电阻的双面自对准刻蚀硅悬臂梁阵列热电变换器
JPH1144705A (ja) 半導体加速度センサおよびその製造方法
JPS61212052A (ja) 梁構造体を有する半導体装置
JPH08320339A (ja) 半導体力学量センサ
JPH07244071A (ja) 加速度センサの感度調整装置