JPS61232608A - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法

Info

Publication number
JPS61232608A
JPS61232608A JP60074976A JP7497685A JPS61232608A JP S61232608 A JPS61232608 A JP S61232608A JP 60074976 A JP60074976 A JP 60074976A JP 7497685 A JP7497685 A JP 7497685A JP S61232608 A JPS61232608 A JP S61232608A
Authority
JP
Japan
Prior art keywords
substrate
growth
chamber
gaas substrate
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60074976A
Other languages
English (en)
Japanese (ja)
Other versions
JPH035051B2 (enExample
Inventor
Toshiro Hayakawa
利郎 早川
Naohiro Suyama
尚宏 須山
Kousei Takahashi
向星 高橋
Saburo Yamamoto
三郎 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP60074976A priority Critical patent/JPS61232608A/ja
Priority to US06/843,146 priority patent/US4824518A/en
Priority to GB08607458A priority patent/GB2174542B/en
Priority to FR868604353A priority patent/FR2579824B1/fr
Publication of JPS61232608A publication Critical patent/JPS61232608A/ja
Publication of JPH035051B2 publication Critical patent/JPH035051B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2911—
    • H10P14/22—
    • H10P14/3418—
    • H10P14/3421—
    • H10P14/3602—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP60074976A 1985-03-29 1985-04-08 半導体素子の製造方法 Granted JPS61232608A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60074976A JPS61232608A (ja) 1985-04-08 1985-04-08 半導体素子の製造方法
US06/843,146 US4824518A (en) 1985-03-29 1986-03-24 Method for the production of semiconductor devices
GB08607458A GB2174542B (en) 1985-03-29 1986-03-26 A method and apparatus for the production of semiconductor devices
FR868604353A FR2579824B1 (fr) 1985-03-29 1986-03-26 Procede et appareil pour la fabrication de dispositifs semi-conducteurs, utilisant un traitement epitaxial par faisceau moleculaire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074976A JPS61232608A (ja) 1985-04-08 1985-04-08 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS61232608A true JPS61232608A (ja) 1986-10-16
JPH035051B2 JPH035051B2 (enExample) 1991-01-24

Family

ID=13562825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074976A Granted JPS61232608A (ja) 1985-03-29 1985-04-08 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS61232608A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61289621A (ja) * 1985-06-18 1986-12-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分子線エピタキシヤル成長方法
JPS6273705A (ja) * 1985-09-27 1987-04-04 Anelva Corp 分子線エピタキシヤル成長層形成における清浄基板面の保護膜作成方法およびその装置
JP2009182315A (ja) * 2008-02-01 2009-08-13 Nippon Mining & Metals Co Ltd 半導体基板の表面処理方法、半導体基板、及び薄膜形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61289621A (ja) * 1985-06-18 1986-12-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分子線エピタキシヤル成長方法
JPS6273705A (ja) * 1985-09-27 1987-04-04 Anelva Corp 分子線エピタキシヤル成長層形成における清浄基板面の保護膜作成方法およびその装置
JP2009182315A (ja) * 2008-02-01 2009-08-13 Nippon Mining & Metals Co Ltd 半導体基板の表面処理方法、半導体基板、及び薄膜形成方法

Also Published As

Publication number Publication date
JPH035051B2 (enExample) 1991-01-24

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