JPS61228687A - 半導体結合超伝導回路装置の製造方法 - Google Patents
半導体結合超伝導回路装置の製造方法Info
- Publication number
- JPS61228687A JPS61228687A JP60069335A JP6933585A JPS61228687A JP S61228687 A JPS61228687 A JP S61228687A JP 60069335 A JP60069335 A JP 60069335A JP 6933585 A JP6933585 A JP 6933585A JP S61228687 A JPS61228687 A JP S61228687A
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- semiconductor
- electrodes
- oxide film
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 239000002887 superconductor Substances 0.000 abstract description 4
- 239000006185 dispersion Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052758 niobium Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 235000012976 tarts Nutrition 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60069335A JPS61228687A (ja) | 1985-04-02 | 1985-04-02 | 半導体結合超伝導回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60069335A JPS61228687A (ja) | 1985-04-02 | 1985-04-02 | 半導体結合超伝導回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61228687A true JPS61228687A (ja) | 1986-10-11 |
| JPH0562831B2 JPH0562831B2 (enrdf_load_stackoverflow) | 1993-09-09 |
Family
ID=13399575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60069335A Granted JPS61228687A (ja) | 1985-04-02 | 1985-04-02 | 半導体結合超伝導回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61228687A (enrdf_load_stackoverflow) |
-
1985
- 1985-04-02 JP JP60069335A patent/JPS61228687A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0562831B2 (enrdf_load_stackoverflow) | 1993-09-09 |
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