JPS61219171A - マルチセル型トランジスタ - Google Patents
マルチセル型トランジスタInfo
- Publication number
- JPS61219171A JPS61219171A JP60060389A JP6038985A JPS61219171A JP S61219171 A JPS61219171 A JP S61219171A JP 60060389 A JP60060389 A JP 60060389A JP 6038985 A JP6038985 A JP 6038985A JP S61219171 A JPS61219171 A JP S61219171A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- region
- straight line
- resistive film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000000087 stabilizing effect Effects 0.000 abstract description 17
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 3
- 230000006378 damage Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 208000010392 Bone Fractures Diseases 0.000 description 1
- 206010017076 Fracture Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60060389A JPS61219171A (ja) | 1985-03-25 | 1985-03-25 | マルチセル型トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60060389A JPS61219171A (ja) | 1985-03-25 | 1985-03-25 | マルチセル型トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61219171A true JPS61219171A (ja) | 1986-09-29 |
| JPH0329299B2 JPH0329299B2 (enrdf_load_stackoverflow) | 1991-04-23 |
Family
ID=13140740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60060389A Granted JPS61219171A (ja) | 1985-03-25 | 1985-03-25 | マルチセル型トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61219171A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63211673A (ja) * | 1987-02-26 | 1988-09-02 | Shindengen Electric Mfg Co Ltd | 電力用トランジスタ |
| JP2002334888A (ja) * | 2001-05-08 | 2002-11-22 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5516427A (en) * | 1978-07-21 | 1980-02-05 | Toshiba Corp | Method of manufacturing semiconductor device |
-
1985
- 1985-03-25 JP JP60060389A patent/JPS61219171A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5516427A (en) * | 1978-07-21 | 1980-02-05 | Toshiba Corp | Method of manufacturing semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63211673A (ja) * | 1987-02-26 | 1988-09-02 | Shindengen Electric Mfg Co Ltd | 電力用トランジスタ |
| JP2002334888A (ja) * | 2001-05-08 | 2002-11-22 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0329299B2 (enrdf_load_stackoverflow) | 1991-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |