JPH0329299B2 - - Google Patents

Info

Publication number
JPH0329299B2
JPH0329299B2 JP60060389A JP6038985A JPH0329299B2 JP H0329299 B2 JPH0329299 B2 JP H0329299B2 JP 60060389 A JP60060389 A JP 60060389A JP 6038985 A JP6038985 A JP 6038985A JP H0329299 B2 JPH0329299 B2 JP H0329299B2
Authority
JP
Japan
Prior art keywords
emitter
region
wiring conductor
film
resistive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60060389A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61219171A (ja
Inventor
Masaru Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP60060389A priority Critical patent/JPS61219171A/ja
Publication of JPS61219171A publication Critical patent/JPS61219171A/ja
Publication of JPH0329299B2 publication Critical patent/JPH0329299B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP60060389A 1985-03-25 1985-03-25 マルチセル型トランジスタ Granted JPS61219171A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60060389A JPS61219171A (ja) 1985-03-25 1985-03-25 マルチセル型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60060389A JPS61219171A (ja) 1985-03-25 1985-03-25 マルチセル型トランジスタ

Publications (2)

Publication Number Publication Date
JPS61219171A JPS61219171A (ja) 1986-09-29
JPH0329299B2 true JPH0329299B2 (enrdf_load_stackoverflow) 1991-04-23

Family

ID=13140740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60060389A Granted JPS61219171A (ja) 1985-03-25 1985-03-25 マルチセル型トランジスタ

Country Status (1)

Country Link
JP (1) JPS61219171A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63211673A (ja) * 1987-02-26 1988-09-02 Shindengen Electric Mfg Co Ltd 電力用トランジスタ
JP4934905B2 (ja) * 2001-05-08 2012-05-23 サンケン電気株式会社 半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516427A (en) * 1978-07-21 1980-02-05 Toshiba Corp Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS61219171A (ja) 1986-09-29

Similar Documents

Publication Publication Date Title
US6331466B1 (en) Insulated gate semiconductor device and manufacturing method thereof
JP4624787B2 (ja) ホール素子を備える磁界センサ
US20130009206A1 (en) Semiconductor device
JPS60187072A (ja) ホ−ル素子
US6140680A (en) Integrated power semiconductor transistor with current sensing
US4994880A (en) Semiconductor device constituting bipolar transistor
JPH0329299B2 (enrdf_load_stackoverflow)
US4500900A (en) Emitter ballast resistor configuration
EP0239960B1 (en) Power transistor device
JP2536302B2 (ja) 絶縁ゲ―ト型バイポ―ラトランジスタ
US5844285A (en) Body contact structure for semiconductor device
US4717886A (en) Operational amplifier utilizing resistors trimmed by metal migration
US5010383A (en) Power transistor device and method for making the same
US5204735A (en) High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
CN111668300A (zh) 半导体装置
US4757368A (en) Semiconductor device having electric contacts with precise resistance values
JPH0442919Y2 (enrdf_load_stackoverflow)
JP3253468B2 (ja) 半導体装置
JP3152561B2 (ja) 半導体集積回路
KR920007784B1 (ko) 에미터안정화저항을구비한고주파반도체장치및그제조방법
JP2524553Y2 (ja) 電力用半導体素子
JP3588476B2 (ja) ホール素子
US6198379B1 (en) Semiconductor component with piezoresistive measuring shunts
JPH0691247B2 (ja) 双方向性半導体装置
KR100302195B1 (ko) 트라이악(triac)소자

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees