JPS61216363A - 伝導度変調型半導体装置 - Google Patents

伝導度変調型半導体装置

Info

Publication number
JPS61216363A
JPS61216363A JP60056018A JP5601885A JPS61216363A JP S61216363 A JPS61216363 A JP S61216363A JP 60056018 A JP60056018 A JP 60056018A JP 5601885 A JP5601885 A JP 5601885A JP S61216363 A JPS61216363 A JP S61216363A
Authority
JP
Japan
Prior art keywords
region
exhibiting
conductivity type
type
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60056018A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0578949B2 (enrdf_load_stackoverflow
Inventor
Makoto Hideshima
秀島　誠
Wataru Takahashi
亘 高橋
Masashi Kuwabara
桑原　正志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60056018A priority Critical patent/JPS61216363A/ja
Publication of JPS61216363A publication Critical patent/JPS61216363A/ja
Publication of JPH0578949B2 publication Critical patent/JPH0578949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
JP60056018A 1985-03-22 1985-03-22 伝導度変調型半導体装置 Granted JPS61216363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60056018A JPS61216363A (ja) 1985-03-22 1985-03-22 伝導度変調型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60056018A JPS61216363A (ja) 1985-03-22 1985-03-22 伝導度変調型半導体装置

Publications (2)

Publication Number Publication Date
JPS61216363A true JPS61216363A (ja) 1986-09-26
JPH0578949B2 JPH0578949B2 (enrdf_load_stackoverflow) 1993-10-29

Family

ID=13015320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60056018A Granted JPS61216363A (ja) 1985-03-22 1985-03-22 伝導度変調型半導体装置

Country Status (1)

Country Link
JP (1) JPS61216363A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6490561A (en) * 1987-09-30 1989-04-07 Mitsubishi Electric Corp Semiconductor device
US4920396A (en) * 1987-04-13 1990-04-24 Nissan Motor Company, Limited CMOS having buried layer for carrier recombination
US4972239A (en) * 1986-11-17 1990-11-20 Nissan Motor Company Limited Conductivity modulated MOSFET
US5025293A (en) * 1989-01-25 1991-06-18 Fuji Electric Co., Ltd. Conductivity modulation type MOSFET
US5031009A (en) * 1987-08-13 1991-07-09 Fuji Electric Co., Ltd. Conductivity modulation semiconductor with no negative resistance characteristics
US5221850A (en) * 1991-03-20 1993-06-22 Fuji Electric Co., Ltd. Conductivity-modulating mosfet
EP0578973A1 (en) * 1992-06-12 1994-01-19 Kabushiki Kaisha Toshiba Method of forming short-circuiting regions for insulated gate semiconductor devices
EP0594049A1 (en) * 1992-10-20 1994-04-27 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and manufacturing method thereof
EP0665597A1 (en) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT and manufacturing process therefore
US5519245A (en) * 1989-08-31 1996-05-21 Nippondenso Co., Ltd. Insulated gate bipolar transistor with reverse conducting current
US5981981A (en) * 1993-10-13 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a bipolar structure
WO2017130416A1 (ja) * 2016-01-29 2017-08-03 サンケン電気株式会社 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108773A (ja) * 1981-11-23 1983-06-28 ゼネラル・エレクトリツク・カンパニイ タ−ンオフ時に活性ベ−ス領域から多数キヤリヤを急速に除去する半導体素子およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108773A (ja) * 1981-11-23 1983-06-28 ゼネラル・エレクトリツク・カンパニイ タ−ンオフ時に活性ベ−ス領域から多数キヤリヤを急速に除去する半導体素子およびその製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4972239A (en) * 1986-11-17 1990-11-20 Nissan Motor Company Limited Conductivity modulated MOSFET
US4920396A (en) * 1987-04-13 1990-04-24 Nissan Motor Company, Limited CMOS having buried layer for carrier recombination
US5031009A (en) * 1987-08-13 1991-07-09 Fuji Electric Co., Ltd. Conductivity modulation semiconductor with no negative resistance characteristics
JPS6490561A (en) * 1987-09-30 1989-04-07 Mitsubishi Electric Corp Semiconductor device
US5025293A (en) * 1989-01-25 1991-06-18 Fuji Electric Co., Ltd. Conductivity modulation type MOSFET
US5519245A (en) * 1989-08-31 1996-05-21 Nippondenso Co., Ltd. Insulated gate bipolar transistor with reverse conducting current
US5221850A (en) * 1991-03-20 1993-06-22 Fuji Electric Co., Ltd. Conductivity-modulating mosfet
EP0578973A1 (en) * 1992-06-12 1994-01-19 Kabushiki Kaisha Toshiba Method of forming short-circuiting regions for insulated gate semiconductor devices
EP0594049A1 (en) * 1992-10-20 1994-04-27 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and manufacturing method thereof
US5569941A (en) * 1992-10-20 1996-10-29 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device with a buried gapped semiconductor region
US5981981A (en) * 1993-10-13 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a bipolar structure
EP0665597A1 (en) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT and manufacturing process therefore
US5723349A (en) * 1994-01-27 1998-03-03 Consorzio Pre La Ricerca Sulla Microelettronica Nel Mezzogiorno Process for manufacturing a high conductivity insulated gate bipolar transistor integrater structure
WO2017130416A1 (ja) * 2016-01-29 2017-08-03 サンケン電気株式会社 半導体装置
JPWO2017130416A1 (ja) * 2016-01-29 2018-11-22 サンケン電気株式会社 半導体装置

Also Published As

Publication number Publication date
JPH0578949B2 (enrdf_load_stackoverflow) 1993-10-29

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