JPS61214512A - Processing device - Google Patents

Processing device

Info

Publication number
JPS61214512A
JPS61214512A JP60054490A JP5449085A JPS61214512A JP S61214512 A JPS61214512 A JP S61214512A JP 60054490 A JP60054490 A JP 60054490A JP 5449085 A JP5449085 A JP 5449085A JP S61214512 A JPS61214512 A JP S61214512A
Authority
JP
Japan
Prior art keywords
processing chamber
cassette
processing
processed
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60054490A
Other languages
Japanese (ja)
Inventor
Akira Takamatsu
朗 高松
Takeo Yoshimi
吉見　武夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60054490A priority Critical patent/JPS61214512A/en
Priority to KR1019860000916A priority patent/KR860007719A/en
Publication of JPS61214512A publication Critical patent/JPS61214512A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Abstract

PURPOSE:To sharply increase the number of materials processed while the conditions of process are being made uniform by a method wherein a chemical vapor deposition (CVD) device is composed of a processing chamber having a treatment gas feeding path and an exhaust path, a plurality of susceptors which revolve both on orbit and on their own axis in the processing chamber, and a cassette with which a plurality of materials to be processed are retained and placed on the susceptor. CONSTITUTION:A plurality of wafers 11 are installed in upright position on the retaining member 16 provided on the main body 13 which constitutes a cassette 12 leaving a space between them, and the main body is coated with a cover 14 whereon a number of penetrated holes 18 are perforated. Also, exhaust passages 2 are provided on the bottom face of the processing chamber, and a number of flow-out holes 4 are provided on the ceiling of the processing chamber. A turn-table 7 to be used for an orbital revolution, having a heater on the back side, is arranged inside the processing chamber 1 having a blow-out head 3, a plurality of susceptors 9 which rotate on their axis are provided on the turn table, and said cassette 12 is arranged thereon. The processing chamber is constituted as above, reaction gas 6 is sent to a head 3 from a feeding path 5, the reaction gas is jetted out from a flow-out hole 4, it is uniformly fed into the penetrated hole 18 of the cover 14, and brought to contact with both surfaces of the wafer.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、処理技術、特に、ＣＶＤ技術に関し、例えば
、半導体装置の製造において、ウェハにＣＶＤＩＩを形
成するのに利用して有効なものに関す杭 〔背景技術〕 半導体装置の製造において、ウェハにＣＶＤＩＩＩを形
成するＣＶＤ装置として、複数枚のウェハを保持した治
具を１体宛処理室に収容してバッチ処理するように構成
したものが、考えられる。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to processing technology, particularly CVD technology. BACKGROUND ART In manufacturing semiconductor devices, a CVD apparatus for forming CVD III on wafers may be configured such that a jig holding a plurality of wafers is housed in a processing chamber for batch processing. .

しかし、このようなＣＶＤ装置においては、１処理当た
りの処理枚数を増加すると、ウェハ同志における均一性
および一枚のウェハ内における均一性が損なわれるため
、１処理当たりの処理枚数を増加することには限界があ
るという問題点があることが、本発明者によって明らか
にされた。However, in such CVD equipment, increasing the number of wafers processed per process impairs uniformity between wafers and within a wafer, so increasing the number of wafers processed per process is difficult. The inventor of the present invention has found that there is a problem in that there are limitations.

なお、ＣＶＤ技術を述べである例としては、次の文献が
ある。Incidentally, as an example that describes CVD technology, there is the following literature.

ソリッド　ステート　テクノロジー　１９７９シユライ
　Ｐ５１〜Ｐ５７　　ウィリアム　ニー・ブラウン、セ
オドア　アイ・カミンズによる「アン　アナリシス　オ
プ　エルピー　ジ−ブイデーシステム　パラメータズ　
フォー　ポリシリコン。Solid State Technology 1979 Schlei P51-P57 "An Analysis of System Parameters" by William N. Brown and Theodore I. Cummins
Four polysilicon.

シリコンナイトライド、アンド　シリコンダイオキサイ
ド　デボジッション」と題する文献（Ｓ。A document entitled ``Silicon Nitride, and Silicon Dioxide Deposition'' (S.

ｌｉｄ　　　５ｔａｔｓ　　　Ｔｅｃｈｎｏｌｏｇｉｙ
Ｊｕｌｙ　　　１９７９　　　Ｐ５１〜Ｐ５７　　　Ｗ
ｉｌｌｉａｍ　　　Ａ、　　Ｂｒｏｗ、　　Ｔｈｅｏｄ
ｏｒ　　　１．　　Ｋａｍｉｎｓ、　　”Ａｎ　　Ａｎ
ａｌｙｓｉｓ　　　ｏｆ　　　ＬＰ　　　ＣＶＤ　　　
Ｓｙｓｔｅｍ　　　Ｐａｒａｍｅｔｅｒｓ　　　ｆｏｒ
　　　Ｐｏ１ｙｓｉｌｉｃｏｎ　　　５ｉｌｉｃｏｎ　
　　Ｎ１ｔｒｉｄｓ　　　ａｎｄ　　　５ｉｌｉｃ。lid 5tats Technology
July 1979 P51~P57 W
illiam A, Brow, Theod
or 1. Kamins, “An An
lysis of LP CVD
System Parameters for
Polysilicon 5ilicon
N1 trids and 5ilic.

ｎ　　　Ｄｉｏｘｉｄｅ　　　Ｄｓｐｓｉｔｉｏｎ”。n　　　　Dioxide　　Dsposition”.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、均一性を確保しつつ、１処理当たりの
処理数を増加することができる処理技術を提供すること
にある。An object of the present invention is to provide a processing technique that can increase the number of processing per processing while ensuring uniformity.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の遺りである。A brief summary of typical inventions disclosed in this application is as follows.

すなわち、複数の被処理物をそれぞれ納めた複数のカセ
ットを複数のサセプタのそれぞれで保持して被処理物の
処理を行うことにより、１処理当たりの処理数を大幅に
増加させるとともに、各サセプタを自公転させることに
より、各カセット間、カセット内における被処理物同志
、被処理物内についての各処理状態の均一性をそれぞれ
確保するようにしたものである。In other words, by holding a plurality of cassettes containing a plurality of objects to be processed in each of a plurality of susceptors and processing the objects, the number of processing per process can be greatly increased, and each susceptor can be processed. By rotating the cassettes, uniformity of each processing state is ensured between the cassettes, between the objects to be processed within the cassettes, and among the objects to be processed.

〔実施例〕〔Example〕

第１図は本発明の一実施例である低圧ＣＶＤ装置を示す
縦断面図、第２図はその横断面図、第３図はそのカセッ
トの分解斜視図である。FIG. 1 is a longitudinal cross-sectional view showing a low-pressure CVD apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view thereof, and FIG. 3 is an exploded perspective view of the cassette.

本実施例において、この低圧ＣＶＤ装置は処理室１を備
えており、処理室１は上下に分割可能で、しかも、略円
筒形状の気密室を形成し得るように構成されている。処
理室１には室内を排気するための排気路２が接続されて
いる。In this embodiment, the low-pressure CVD apparatus includes a processing chamber 1, which can be divided into upper and lower parts, and is configured to form a substantially cylindrical airtight chamber. An exhaust path 2 for exhausting the interior of the chamber is connected to the processing chamber 1 .

処理室１内の上部には略中空円盤形状に形成された吹き
出しヘッド３が配設されており、このヘッド３には多数
の吹き出し口４が略均−に配されて開設されている。こ
のヘッド３には供給路５が、モノシラン等のような処理
ガスとしての反応ガス６を供給するように接続されてお
り、ヘッド３はこの反応ガス６を吹き出し口４から下方
に向けてシャワー状に吹き出すようになっている。At the upper part of the processing chamber 1, a blowing head 3 formed in a substantially hollow disk shape is disposed, and a large number of blowing ports 4 are opened in the head 3 and are arranged approximately evenly. A supply channel 5 is connected to this head 3 so as to supply a reactive gas 6 as a processing gas such as monosilane, and the head 3 directs this reactive gas 6 downward from an outlet 4 in the form of a shower. It's like it's blowing out.

処理室Ｉ内の下部には略円板形状のターンテーブル７が
水平かつ同心的に配設されており、ターンテーブル７は
処理室１に下から挿入された回転軸８により水平面内に
おいて回転されるようになっている。A substantially disk-shaped turntable 7 is arranged horizontally and concentrically at the lower part of the processing chamber I, and the turntable 7 is rotated in a horizontal plane by a rotating shaft 8 inserted into the processing chamber 1 from below. It has become so.

ターンテーブル７上には小径の円板形状のサセプタ９が
複数、回転軸心周りに略等間隔に配設されており、各サ
セプタ９は適当な駆動手段（図示せず）により水平面内
においてそれぞれ回転されるように構成されている。し
たがって、サセプタ９はターンテーブル７の回転と、そ
れ自身の回転とによりターンテーブル７の軸心周りを自
公転することになる。A plurality of small-diameter disk-shaped susceptors 9 are arranged on the turntable 7 at approximately equal intervals around the rotation axis, and each susceptor 9 is moved in a horizontal plane by an appropriate driving means (not shown). It is configured to be rotated. Therefore, the susceptor 9 rotates around the axis of the turntable 7 due to the rotation of the turntable 7 and its own rotation.

ターンテーブル７の下にはヒータ１０が配設されており
、ヒータ１０はサセプタ９上を加熱し得るように構成さ
れている。A heater 10 is disposed below the turntable 7, and the heater 10 is configured to heat the top of the susceptor 9.

サセプタ９は被処理物としてのウェハ１１を複数枚保持
したカセット１２を載置して回転させ得るように構成さ
れており、カセット１２は第３図に示されているように
構成されている。The susceptor 9 is configured to be able to place and rotate a cassette 12 holding a plurality of wafers 11 as objects to be processed, and the cassette 12 is configured as shown in FIG. 3.

カセット１２は本体１３とカバー１４とを備えており、
本体およびカバーは石英ガラス等から形成されている。The cassette 12 includes a main body 13 and a cover 14.
The main body and cover are made of quartz glass or the like.

本体１３はベース１５と、ベース１５上に互いに平行に
配設されている一対の保持部材１６と、両保持部材１６
．１６に等間隔に互いに対向するようにそれぞれ配され
てウェハ１１を挿入して保持するように刻設されている
複数の保持溝１７とを備えており、両保持部材１６．１
６の対向する溝１７．１７間にウェハ１１を挿入される
ことにより、複数枚のウェハ１１を立てた状態で整列さ
せて保持するようになっている。The main body 13 includes a base 15, a pair of holding members 16 arranged parallel to each other on the base 15, and both holding members 16.
．． 16 are provided with a plurality of holding grooves 17, which are arranged so as to face each other at equal intervals and are carved so as to insert and hold the wafer 11, and both holding members 16.1
By inserting the wafers 11 between the opposing grooves 17.

カバー１４は本体１３に被せられる箱形状に形成されて
おり、各壁には多数の透孔１８が略均−に配されて内外
を連通ずるように多数開設されている。カバー１４は本
体１３に被せられた状態でウェハ１１群を覆うようにな
っている。The cover 14 is formed into a box shape to be placed over the main body 13, and has a large number of through holes 18 arranged approximately evenly in each wall so as to communicate between the inside and the outside. The cover 14 is placed over the main body 13 so as to cover the group of wafers 11.

次に作用を説明する。Next, the action will be explained.

複数枚のウェハ１１を本体１３で保持し、カバー１４に
より覆ったカセット１２はそのまま、各サセプタ９上に
それぞれ載置される。処理室１の気密が保たれ、室内が
排気路２により排気されると、ターンテーブル７および
各サセプタ９がそれぞれ回転される。また、ヒータ１０
により各サセプタ９上のカセット１２内におけろウェハ
１１が加熱される。A cassette 12 holding a plurality of wafers 11 with a main body 13 and covered with a cover 14 is placed on each susceptor 9 as it is. When the processing chamber 1 is kept airtight and the chamber is evacuated through the exhaust path 2, the turntable 7 and each susceptor 9 are rotated. In addition, the heater 10
As a result, the wafers 11 in the cassettes 12 on each susceptor 9 are heated.

この状態において、吹き出しヘッド３から反応ガス６が
シャワー状に吹き出されると、各サセプタ９が自公転し
ているため、吹き出しガス６は各サセプタ９上のカセッ
ト１２にそれぞれ均一に接触することになる。In this state, when the reaction gas 6 is blown out in a shower form from the blow-off head 3, the blown gas 6 comes into uniform contact with the cassettes 12 on each susceptor 9 because each susceptor 9 is rotating. Become.

そして、カセット１２に均一に接触した反応ガス６はカ
セット１２のカバー１４に均一に配されて開設されてい
る透孔１８からカセット１２の内部に流入する。このと
き、透孔１８群は反応ガス６のカセット１２内外に対す
る流通が全体的に均一になるように制御する作用を果た
す。Then, the reaction gas 6 that has uniformly contacted the cassette 12 flows into the interior of the cassette 12 through the through holes 18 that are uniformly arranged and opened in the cover 14 of the cassette 12 . At this time, the group of through holes 18 functions to control the flow of the reaction gas 6 into and out of the cassette 12 so as to be uniform throughout.

カセット１２内を均一に流通する反応ガス６は各ウェハ
間において、かつ、一枚毎のウェハ内において処理面に
均一に接触することになるため、ＣＶＤ反応は均一に行
われ、ＣＶＤ膜が均一に形成されることになる。The reaction gas 6 that flows uniformly within the cassette 12 uniformly contacts the processing surface between each wafer and within each wafer, so that the CVD reaction is uniformly performed and the CVD film is uniform. will be formed.

成膜処理が終了すると、ウェハ１１はカセット１２に収
納されたままの状態で、処理室１から搬出される。ウェ
ハ１１は他の工程においても、このカセット１２に収納
されたままで一括処理されるとともに、移送等のような
作業も一括して取り扱われる。When the film forming process is completed, the wafer 11 is carried out from the processing chamber 1 while being housed in the cassette 12. Even in other processes, the wafers 11 are processed all at once while being housed in the cassette 12, and operations such as transportation are also handled all at once.

〔効果〕〔effect〕

＋１１　　複数の被処理物をそれぞれ収納した複数のカ
セットを複数のサセプタで保持して処理することにより
、１処理当たりの処理数を大幅に増加さセることができ
るため、処理装置の処理能力を大幅に増強することがで
きる。+11 By holding and processing multiple cassettes containing multiple objects to be processed using multiple susceptors, the number of processing per process can be significantly increased, thereby increasing the processing capacity of the processing equipment. It can be significantly enhanced.

（２）複数の被処理物をカセットに収納した状態で処理
することにより、複数の被処理物を一括して取り扱うこ
とができるため、作業性を高めることができる。(2) By processing a plurality of objects to be processed while being housed in a cassette, the plurality of objects to be processed can be handled at once, thereby improving work efficiency.

（３）　　複数のサセプタを公転軸心周りに配設するこ
とにより、平面利用効率を高めることができるため、占
拠面積を抑制することができるとともに、装置を小型化
することができる。(3) By arranging a plurality of susceptors around the revolution axis, it is possible to increase the plane utilization efficiency, so that the occupied area can be suppressed and the device can be downsized.

（４）　　カセットを保持したサセプタを自公転させる
ことにより、処理ガスと均一に接触させることができる
ため、被処理物群間、各被処理物間および被処理物内に
おける処理状態の均一性を確保することができる。(4) By rotating the susceptor that holds the cassette, it is possible to bring it into uniform contact with the processing gas, which improves the uniformity of the processing state between groups of objects to be processed, between each object to be processed, and within an object to be processed. can be secured.

（５）　　カセットに透孔を有するカバーを設けること
により、処理ガスのカセット内外に対する流通を均一に
制御することができるため、処理状態の均一性を一層高
めることができる。(5) By providing the cassette with a cover having through holes, it is possible to uniformly control the flow of processing gas into and out of the cassette, thereby further improving the uniformity of the processing state.

（６）処理ガスを吹き出しヘッドからシャワー状に吹き
出させることにより、自公転するカセットに処理ガスを
均一に降り注ぐことができるため、処理状態の均一性を
一層高めることができる。(6) By blowing out the processing gas from the blow-off head in the form of a shower, the processing gas can be uniformly poured onto the rotating cassette, thereby further improving the uniformity of the processing state.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸説しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the Examples and can be modified in various ways without departing from the gist of the invention. Not even.

例えば、カセットは本体とカバーとから構成するに限ら
ず、カバーは省略してもよい。For example, the cassette is not limited to being composed of a main body and a cover, and the cover may be omitted.

処理ガスは吹き出しヘッドからシャワー状に供給するに
限らずζ処理室に接続した供給路から直接吹き出させる
ように構成してもよい。The processing gas is not limited to being supplied in the form of a shower from the blowing head, but may be directly blown out from a supply path connected to the ζ processing chamber.

サセプタを自公転させる構造はサセプタをターンテーブ
ル上で自転させる構造に限らない。The structure in which the susceptor rotates around its axis is not limited to the structure in which the susceptor rotates on its axis on a turntable.

〔利用分野〕[Application field]

以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である低圧ＣＶＤ装五に通
用した場合について説明したが、それに限定されるもの
ではなく、常圧ＣＶＤ装置やプラズマＣＶＤ装置、さら
には、ドライエツチング装置、エピタキシャル装置、拡
散装置、アニール装置等にも通用することができる。In the above explanation, the invention made by the present inventor was mainly applied to low pressure CVD equipment, which is the background field of application. It can also be used in dry etching equipment, epitaxial equipment, diffusion equipment, annealing equipment, etc.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例である低圧ＣＶＤ装置を示す
縦断面図、 第２図はその横断面図、 第３図はそのカセットの分解斜視図である。 １・・・処理室、２・・・排気路、３・・・吹き出しヘ
ッド、４・・・吹き出し口、５・・・供給路、６・・・
反応ガス（処理ガス）、７・・・ターンテーブル、８・
・・回転軸、９・・・サセプタ、１０・・・ヒータ、１
１・・・ウェハ（被処理物）、１２・・・カセット、１
３・・・本体、１４・・・カバー、１５・・・ベース、
１６・・保持部材、１７・・・保持溝。 第　　１ｖｌＪ 第　　２　　図FIG. 1 is a longitudinal cross-sectional view showing a low-pressure CVD apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view thereof, and FIG. 3 is an exploded perspective view of the cassette. DESCRIPTION OF SYMBOLS 1... Processing chamber, 2... Exhaust path, 3... Blow-off head, 4... Blow-off port, 5... Supply path, 6...
Reaction gas (processing gas), 7... Turntable, 8.
... Rotating shaft, 9... Susceptor, 10... Heater, 1
1... Wafer (workpiece), 12... Cassette, 1
3...Body, 14...Cover, 15...Base,
16... Holding member, 17... Holding groove. 1vlJ Fig. 2

Claims (1)

【特許請求の範囲】 １、処理ガス供給路および排気路を有する処理室と、処
理室内で自公転する複数のサセプタと、被処理物を複数
保持してサセプタに保持されるカセットとを備えている
処理装置。 ２、カセットが、被処理物を保持する本体と、被処理物
を覆う多孔性のカバーとを備えていることを特徴とする
特許請求の範囲第１項記載の処理装置。 ３、処理ガス供給路が、処理ガスをシャワー状に吹き出
すヘッドに接続されていることを特徴とする特許請求の
範囲第１項記載の処理装置。[Claims] 1. A processing chamber having a processing gas supply path and an exhaust path, a plurality of susceptors that rotate around their axis in the processing chamber, and a cassette that holds a plurality of objects to be processed and is held by the susceptor. processing equipment. 2. The processing apparatus according to claim 1, wherein the cassette includes a main body that holds the object to be processed and a porous cover that covers the object to be processed. 3. The processing apparatus according to claim 1, wherein the processing gas supply path is connected to a head that blows out the processing gas in the form of a shower.
JP60054490A 1985-03-20 1985-03-20 Processing device Pending JPS61214512A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60054490A JPS61214512A (en) 1985-03-20 1985-03-20 Processing device
KR1019860000916A KR860007719A (en) 1985-03-20 1986-02-11 Method of processing wave and wave processing device used therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60054490A JPS61214512A (en) 1985-03-20 1985-03-20 Processing device

Publications (1)

Publication Number Publication Date
JPS61214512A true JPS61214512A (en) 1986-09-24

Family

ID=12972080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60054490A Pending JPS61214512A (en) 1985-03-20 1985-03-20 Processing device

Country Status (2)

Country Link
JP (1) JPS61214512A (en)
KR (1) KR860007719A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370142U (en) * 1986-10-24 1988-05-11
US7699067B2 (en) * 2005-12-02 2010-04-20 Hon Hai Precision Industry Co., Ltd. Clamping apparatus for washing optical members

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370142U (en) * 1986-10-24 1988-05-11
US7699067B2 (en) * 2005-12-02 2010-04-20 Hon Hai Precision Industry Co., Ltd. Clamping apparatus for washing optical members

Also Published As

Publication number Publication date
KR860007719A (en) 1986-10-15

Similar Documents

Publication Publication Date Title
TWI768849B (en) Single wafer processing environments with spatial separation
US5556275A (en) Heat treatment apparatus
US20150211119A1 (en) Film deposition apparatus
JPH04115531A (en) Chemical vapor growth device
JPH03287770A (en) Single wafer processing atmospheric cvd device
KR940004735A (en) Semiconductor Wafer Processing Equipment
JP6747220B2 (en) Substrate processing apparatus and substrate processing method
TWI764225B (en) Substrate processing apparatus, manufacturing method of semiconductor device, substrate holder, and program
US20090212014A1 (en) Method and system for performing multiple treatments in a dual-chamber batch processing system
JPH0845909A (en) Sample stand
JPS61214512A (en) Processing device
JP2023113690A (en) Methods of operating spatial deposition tool
JPS63150912A (en) Formation of thin film and apparatus therefor
JPS61212014A (en) Semiconductor wafer processing device using chemical vapor deposition method
JP7048690B2 (en) Substrate processing equipment, semiconductor device manufacturing methods and substrate holders
JP2004014953A (en) Processing system and processing method
JPS6383275A (en) Cvd device
JP2001077042A (en) Vertical type heat-treating device
JPS6343315A (en) Reduced pressure cvd equipment
JP3072219B2 (en) Chemical vapor deposition method and apparatus
JPH06136543A (en) Plasma cvd apparatus
JPS61190948A (en) Film forming device
JPS61214513A (en) Processing device
JPH0322522A (en) Vapor growth device
KR20230030528A (en) Film forming apparatus and film forming method