JP3072219B2 - Chemical vapor deposition method and apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition method for forming a thin film such as an insulating film on a semiconductor wafer by evaporating a film forming material in a semiconductor process and a chemical vapor deposition apparatus used in the method. Things.

[0002]

2. Description of the Related Art FIG. 11 is a structural sectional view of a conventional chemical vapor deposition apparatus (hereinafter referred to as a CVD apparatus). Here, as an example, description will be made using a low pressure CVD apparatus. In FIG. 11, 1 is a semiconductor wafer, 2 is a wafer stage, 3 is a clamp claw, 4 is a gripping mechanism having a clamp claw 3, 5
Is a heater, and 6 is a supporting rotating body, which is integrally connected to the wafer stage 2 via a support post 7. The supporting rotator 6 is integrally connected to the large gear 8. 9 is an electric motor,
Reference numeral 10 denotes a small gear, which is fixed to the shaft of the electric motor 9 and meshes with the large gear 8.

[0003] supporting rotator 6 is supported in the reaction vessel 12 by a bearing 11, pressure in the reaction vessel 12 interior of the reaction chamber 14 by slidable vacuum seal 13 between the supporting rotating member 6 and the reaction vessel 12 is predetermined It can be maintained at the atmospheric pressure. 15 is a gas head, 16 and 17 are source gas supply holes, 18 is a mixing chamber, and the supplied source gas is supplied to the mixing chamber 18.
Mixed in. Reference numeral 19 denotes a number of reaction gas introduction holes provided in the gas head 15. Reference numeral 20 denotes an exhaust port.

Next, the operation will be described. A plurality of semiconductor wafers 1 are stored in a cassette (not shown) and
The semiconductor wafer 1 is transferred to the apparatus and supplied to the wafer stage 2 by a handling robot (not shown) provided in the manufacturing apparatus. The semiconductor wafer 1 has clamp claws 3
Is mounted on the wafer stage 2 by the gripping mechanism 4 having Thereafter, the reaction vessel 12 is sealed, and the pressure in the reaction chamber 14 is reduced to a predetermined pressure. The semiconductor wafer 1 mounted on the wafer stage 2 is heated by the heater 5, and the wafer stage 2 mounted with the semiconductor wafer 1 is rotationally driven by the electric motor 9 via the supporting rotating body 6 and the gear unit. On the other hand, the raw material gases supplied through the raw gas supply holes 16 and 17 are mixed in the mixing chamber 18 and the reaction gas is supplied to the gas head 15.
The reaction gas is supplied to the reaction chamber 14 through a plurality of reaction gas introduction holes 19 provided in the semiconductor wafer 1, and a predetermined thin film is formed on the semiconductor wafer 1 by the reaction gas. During the reaction, the wafer stage 2 continues to rotate, and the thickness of the thin film to be formed can be made uniform. The reaction gas involved in the reaction is exhausted from the reaction chamber 14 through the exhaust port 20 as exhaust gas. When the above film forming process is completed, the valve of the source gas supply piping system is closed, and the supply of the reaction gas to the reaction chamber 14 is stopped. Thereafter, the semiconductor wear 1 is taken out of the reaction vessel 12 by a handling robot arranged in the manufacturing apparatus.

[0005]

In recent ultra-large scale integrated circuit (LSI) semiconductor devices, the pattern line width drawn on an integrated circuit tends to be narrower due to miniaturization. On an integrated circuit, processing of a narrow and deep portion such as a trench is required. Since the conventional CVD apparatus is configured as described above, for example, in a film forming process, the film forming surface of the semiconductor wafer 1 during film formation always faces the reaction gas introduction hole 19. For this reason, the film formation surface is only a plane motion perpendicular to the axis of the reaction gas introduction hole 19 of the gas head 15, and when the processing depth is not so deep with respect to the circuit width as in the conventional case, the gas head 15 Only the non-uniformity of the film thickness on the film formation surface of the semiconductor wafer 1 based on the planar arrangement of the reaction gas introduction holes 19 becomes a problem, and the gas head 15 and the film formation surface are leveled by relative plane movement. As a result, a film having a similar thickness could be formed on the bottom surface and the side surface.

However, in the case of a narrow and deep trench, the reaction gas introduction hole 1 in the gas head 15 is merely used.
The thin film on the bottom surface of the trench on the film formation surface of the semiconductor wafer 1 is smooth and the thickness is uniform, instead of the problem of uneven film thickness on the film formation surface of the semiconductor wafer 1 based on the planar arrangement of the semiconductor wafers 9. However, there is a problem that the film thickness becomes thinner on the side wall of the trench, and it becomes difficult to form a smooth and uniform thin film including the side wall and the bottom. In addition, since the distance between the gas head 15 and the wafer stage 2 is fixed, it is difficult to cope with various process conditions.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and can form a smooth and uniform thin film including the side walls and the bottom of a narrow and deep trench formed on an integrated circuit. It is an object of the present invention to provide a chemical vapor deposition method and an apparatus therefor.

[0008]

A chemical vapor deposition apparatus according to the present invention is provided in a reaction chamber that can be sealed from the outside and supplies a reaction gas to the reaction chamber. Exhaust means, and a support means for mounting the workpiece disposed in the reaction chamber such that the surface to be processed faces the reaction gas introducing means and heating the workpiece, and mounted on the support means. First driving means for driving the supporting means or the reactive gas introducing means such that the workpiece and the reactive gas introducing means face each other and move in a plane while facing each other; and a work piece of the workpiece mounted on the supporting means. And a second driving means for driving the supporting means or the reactive gas introducing means so that the processing surface and the reactive gas introducing means face each other while swinging each other.

Further, the first drive means for driving the support means or the reaction gas introduction means is a rotating device for rotating the support means or the reaction gas introduction means. Further, the reaction chamber is further provided with a decompression means.

In addition, a gas head provided in a reaction chamber which can be sealed from the outside and which rectifies a reaction gas pressurized from a plurality of reaction gas introduction holes and supplies it to the reaction chamber, An exhaust port exhausted by an exhaust device provided with a device, and a support provided in the reaction chamber and having a heater for mounting the workpiece so that the workpiece surface faces the gas head and heating the workpiece. And a rotating device for rotating the support or the gas head so as to cut the axial direction of the reaction gas introduction hole by moving the workpiece and the gas head mounted on the support while facing each other in a plane. A swinging device that swings the support base or gas head such that the processing surface of the workpiece mounted on the support base and the reaction gas introduction hole face each other while swinging each other. .

Still further, the support means or the reaction gas introduction means or the support table or the gas head is provided via a parallel moving mechanism so that the distance between the support means and the reaction gas introduction means or the distance between the support table and the gas head can be adjusted. Is arranged. Further, as a chemical vapor deposition method according to the present invention, a workpiece is mounted in a reaction chamber having a reaction gas introduction means and a workpiece support means such that the reaction gas introduction means and the workpiece surface face each other. Performing the step of heating the workpiece, the step of moving the workpiece mounted on the supporting means and the reactive gas introducing means in a plane while mutually facing each other, and the step of moving the workpiece mounted on the supporting means. A step of causing the surface to be processed and the reaction gas introducing means to oscillate with each other while the surface to be processed is opposed to the reaction gas introducing means.

Further, the step of moving the plane is a step of moving the plane by rotating the support means. Also,
Mounting the workpiece such that the gas head and the processing surface of the workpiece face each other in a reaction chamber having a gas head and a support for mounting the workpiece, and heating the workpiece. And a step in which the workpiece mounted on the support and the gas head face each other while rotating the support or the gas head so that the workpiece and the gas head face each other, and a processing surface of the workpiece mounted on the support. And a step of mutually swinging the surface to be processed and the gas head while facing the gas head.

Further, the step of moving in a plane and the step of swinging are performed simultaneously. The method further includes a step of reducing the pressure in the reaction chamber. Further, the method further comprises a step of adjusting the distance between the processing surface and the reaction gas introduction hole according to the processing conditions.

[0014]

In the chemical vapor deposition apparatus constructed as described above, the first driving means for driving the supporting means so that the workpiece moves in a plane while facing the reaction gas introducing means, Since there is provided a supporting means or a second driving means for driving the reaction gas introduction means so that the processing surface and the reaction gas introduction means face each other while swinging each other, the workpiece is provided with respect to the reaction gas introduction means. Since the surface to be processed can be inclined, the reaction gas can easily reach the side wall portion having deep irregularities on the surface to be processed.

Since the first drive means for driving the support means is a rotating device for rotating the support means, continuous planar movement of the workpiece can be easily realized. In addition, since the reaction chamber is provided with a decompression means, the reaction gas can easily reach the side wall portion having deep irregularities on the surface to be processed in the decompression chemical vapor deposition apparatus. In addition, since the supporting means or the reactive gas introducing means or the supporting table or the gas head is provided through the parallel moving mechanism, the distance between the supporting means and the reactive gas introducing means or the distance between the supporting table and the gas head can be adjusted, and processing conditions Setting is easy.

Further, in the chemical vapor deposition method configured as described above, the step of moving the workpiece in a plane while facing the reactive gas introducing means, and the step of moving the workpiece surface of the workpiece to the reactive gas introducing means. And the step of swinging the reaction surface and the reaction gas introduction means while opposing each other, the processing surface of the workpiece is inclined with respect to the reaction gas introduction means,
The reaction gas can easily reach the deep uneven side wall of the surface to be processed.

Further, since the step of moving the plane is a step of moving the plane by rotating the support means, the plane movement is continuous and the processing becomes uniform. Also, since the step of moving the plane and the step of swinging are performed simultaneously, the processing can be performed continuously, and the processing becomes more uniform. In addition, since the process for adjusting the distance between the surface to be processed and the reaction gas introduction hole is adjusted according to the processing conditions, the optimum processing conditions can be set and changed in a short time, and the processing efficiency can be shortened. improves.

[0018]

【Example】

Embodiment 1 FIG. FIG. 1 is a sectional view of a partially broken structure of a CVD apparatus according to an embodiment of the present invention. FIG. 2 shows the swinging device 3.
FIG. 2 is a cross-sectional view of a partially broken structure showing No. 1; Here, as an example, description will be made using a low pressure CVD apparatus.

In FIGS. 1 and 2, reference numeral 1 denotes a semiconductor wafer, 2 denotes a wafer stage serving as a support means or a support table for holding the semiconductor wafer 1, and the semiconductor wafer 1 is held by a gripping mechanism 4 having clamp claws 3 for the wafer stage. 2
Attached to . The gripping mechanism 4 is movable in the direction of arrow A by a linear motion mechanism (not shown). When mounting the semiconductor wafer 1, the semiconductor wafer 1 is inserted by separating the clamp claw 3 from the wafer stage 2, and then the clamp claw 3 is moved closer to the wafer stage 2 to hold the semiconductor wafer 1.

Reference numeral 5 denotes a heater for heating the semiconductor wafer 1 during film formation. Reference numeral 21 denotes a rotating device serving as a first driving means. The rotating device 21 includes a supporting rotator 6, a large gear 8 integrally connected at an upper end of the supporting rotator 6, and a small gear meshing with the large gear 8. And an electric motor 9 integrally connected thereto. The support rotator 6 is rotated by the electric motor 9.

The supporting rotator 6 is supported by the reaction vessel 12 by a bearing 11, and is slidable by a vacuum seal 13 disposed between the supporting rotator 6 and the reaction vessel 12.
2 The internal pressure of the reaction chamber 14 is low, for example, 1 to 30 To.
rr. Since the holding pressure of the slidable vacuum seal 13 is about atmospheric pressure, for example, a vacuum seal using a magnetic fluid can be applied.

An oscillating device 31 as a second driving means is provided inside the supporting rotary member 6. In FIG. 2, 3
Reference numeral 2 denotes a swing drive unit of the swing device 31, and reference numeral 33 denotes a swing driven portion of the swing device 31. The swing drive unit 32 includes an electric motor 34 and a small gear 35. FIG. 3 is a plan view showing the swing driven portion 33. FIG. 4 is a structural sectional view taken along the line IV-IV in FIG.

3 and 4, reference numeral 36 denotes a small gear 35.
, A large gear shaft, 38 a gear shaft support, and 39 a swing table. Large gear 36 and gear support 3
Numerals 8 are fixed to the large gear shaft 37 by keys. The large gear shaft 37 is rotatably connected to the supporting rotating body 6 via a bearing 40. The gear shaft support 38 is integrally fixed to a swing table 39, and the swing table 39 is integrally fixed to the back surface of the wafer stage 2 via a support 41. The swing driven portion 33 integrally connected to the wafer stage 2 in this manner is supported by the support rotating body 6 so as to be swingable. In the swing driven portion 33 of the swing device 31, the position where the surface to be machined faces the reaction gas introduction hole 19 of the gas head 15 is set as a neutral position.

FIG. 5 shows a wafer stage 2 and a heater 5.
FIG. FIG. 6 is a sectional view taken along the line VI-VI in FIG. 5 and 6, the wafer stage 2 has a larger area than the main surface of the semiconductor wafer 1 and has a semiconductor wafer holding surface 42 having a large outer diameter.
In the state of holding the semiconductor wafer 1, an annular protrusion 44 having a constant width inserted from the outer periphery of the semiconductor wafer 1 to provide a minute gap 43 between the semiconductor wafer holding surface 42 and the semiconductor wafer 1. Is provided. Notches 45 are provided at regular intervals in the annular projection 44,
The swing table 39 supplies a predetermined amount of heat transfer gas precisely controlled by a flow rate control device (not shown) from a heat transfer gas supply device (not shown) provided outside via a connecting pipe 46. Hole 4
The wafer is sent to the back of the wafer through 7 and radially flows out from the periphery of the wafer. Reference numeral 48 denotes a guide hole of the gripping mechanism 4, which is provided at three places since there are three clamp claws 3.

A heater 5 is provided on the back of the wafer stage 2.
Are arranged in two parts on the center side and the outer peripheral side in order to equalize the temperature of the wafer stage 2. In FIG. 1, reference numeral 15 denotes a gas head serving as a reaction gas introducing means, which is disposed to face the wafer stage 2 and is fixed to the reaction vessel 12 in this embodiment. FIG. 7 is a plan view of the gas head. The gas head 15 is provided with a number of reaction gas introduction holes 19. The reaction gas rectified by the reaction gas introduction hole 19 is supplied to the processing surface of the semiconductor wafer 1 held on the wafer stage 2 in the reaction chamber 14.

The gas head 15 and the source gas supply hole 16
A mixing chamber 18 is provided between
5 separates the mixing chamber 18 from the reaction chamber 14. The raw material gas supplied through the raw material gas supply holes 16 and 17 is supplied to the mixing chamber 1.
8 and supplied to the reaction chamber 14 from the gas head 15 as a reaction gas. Reference numeral 25 denotes an exhaust groove, which is annularly disposed at a predetermined distance diagonally above the periphery of the wafer stage 2 and is connected to exhaust ports 20 which are exhaust means provided at four locations. Reference numeral 22 denotes a backflow prevention protrusion provided under the exhaust groove 25 over the entire circumference thereof, and while the reaction gas involved in the reaction is sent from the exhaust groove 25 to the exhaust port 20, the wafer stage 2 of the reaction chamber 14 is Prevents backflow to nearby areas.

The exhaust port 20 is connected to a vacuum device 23 through a filter (not shown) that adsorbs the reaction gas, and reduces the pressure of the reaction vessel 12 to a predetermined pressure and exhausts the reaction gas involved in the reaction. The gas is discharged from the reaction chamber 14 to the outside. Reference numeral 24 denotes a cooling pipe for cooling the reaction vessel 12, to which cooling water is supplied from the outside.

Next, the operation will be described. A plurality of semiconductor wafers 1 are stored in a cassette (not shown) and
The semiconductor wafer 1 is transferred to the apparatus and supplied to the wafer stage 2 by a handling robot (not shown) provided in the manufacturing apparatus. The semiconductor wafer 1 has clamp claws 3
Is driven by a linear motion mechanism (not shown) and mounted on the wafer stage 2. When mounting the semiconductor wafer 1, the semiconductor wafer 1 is inserted by separating the clamp claw 3 from the wafer stage 2, and then the clamp claw 3 is moved closer to the wafer stage 2 to hold the semiconductor wafer 1. Thereafter, the reaction vessel 12 is sealed, and the reaction chamber 14 is closed by the vacuum device 23 contacted through the exhaust port 20.
Is reduced to a predetermined pressure.

The wafer stage 2 is heated by the heater 5, and the semiconductor wafer 1 mounted on the wafer stage 2 is supplied to the wafer stage 2, the swing table 39 , the connecting pipe 46, and a predetermined supply from the outside via the supply hole 47. Is uniformly heated by the heat transfer gas. The heat transfer gas is annular projection 44
Is reserved in the gap between the semiconductor wafer 1 and the semiconductor wafer holding surface 42 formed by the notch 45 of the annular projection 44
Radiation flows out of the periphery of the semiconductor wafer 1 through the semiconductor wafer 1 , thereby preventing reaction by-products from adhering to the semiconductor wafer holding surface 42 and the outer peripheral portion of the back surface of the semiconductor wafer 1.

The wafer stage 2 on which the semiconductor wafer 1 is mounted is connected to the supporting rotator 6 via a swinging device 31 and via a small gear 10 and a large gear 8 which constitute a reduction gear together with the supporting rotator 6. The motor 9 is driven to rotate at 3 to 5 rpm. When the swing driven portion 33 is stopped at the neutral position, the rotation of the wafer stage 2 is a plane motion in which the processed surface of the semiconductor wafer 1 cuts the axis of the reaction gas introduction hole 19 of the gas head 15 perpendicularly. Further, the electric motor 34 of the oscillating drive unit 32 of the oscillating device 31 is rotated in the forward and reverse directions via the small gear 35 and the large gear 36, and in addition to this plane movement, the oscillating driven part 33 is supported around the large gear shaft 37 It is swung with respect to the rotating body 6. The speed of this swing is substantially the same as the rotation speed of the supporting rotor 6.

On the other hand, from the source gas supply holes 16 and 17,
For example, source gases such as dichlorosilane (SiH ₂ Cl ₂ ) and ammonia (NH ₃ ) are supplied to the mixing chamber 18, and the supplied source gases are mixed in the mixing chamber 18, and a flow control device (not shown) For example, a reaction gas at a predetermined flow rate accurately controlled by a mass flow controller or the like is supplied from a gas head 15 to a surface to be processed of a semiconductor wafer 1 mounted on a wafer stage 2 of a reaction chamber 14 and heated at a high temperature. In the case of the above-mentioned source gas, a thin film of SiN ₄ is formed on the surface to be processed of the semiconductor wafer 1.

FIG. 7 is a plan view of a gas head of the CVD apparatus. The gas head 15 is provided with a large number of reaction gas introduction holes 19, which are supplied from the gas head 15 to the film formation surface of the semiconductor wafer 1 mounted on the wafer stage 2 at a predetermined interval. The film forming surface of the wafer 1
Reaction gas introduction hole 1 of gas head 15 by rotating device 21
9 in addition to the plane movement which cuts the axis of 9 vertically.
Rocking motion is applied such that the film formation surface of the semiconductor wafer 1 is inclined with respect to the axis of the reaction gas introduction hole 19. For this reason, if the film formation surface of the semiconductor wafer 1 is only a plane motion which cuts the axis of the reaction gas introduction hole 19 of the gas head 15 perpendicularly, the film formation surface of the semiconductor wafer 1 and the planar arrangement of the gas head 15 In other words, only the action of equalizing the reaction conditions determined by, for example, the reaction gas uniformly hits the bottom surface of the trench on the deposition surface of the semiconductor wafer 1 and makes the thickness of the bottom surface of the trench uniform, In addition, since the rocking motion is applied, a state where the film formation surface of the semiconductor wafer 1 is inclined with respect to the axis of the reaction gas introduction hole 19 is added, and the side wall of the trench is formed with the reaction gas introduction hole 19.
The chances of being exposed to the reaction gas that rises directly from the reaction gas introduction hole 19 while having the axis and the inclination angle are increased.

Therefore, not only is the film thickness of the bottom surface of the trench uniform over the entire film formation surface, but also the side wall portion of the trench is formed in the same manner as the bottom surface, and both the side wall portion and the bottom portion are smooth and uniform. A thin film having a large thickness can be formed. The reaction gas that participated in the reaction is
The gas is exhausted from the reaction chamber 14 to the outside from the reaction chamber 14 through the exhaust port 20 by the vacuum device 23.

When the above film forming process is completed, the valve of the source gas supply piping system is closed, and the supply of the reaction gas to the reaction chamber 14 is stopped. After that, the semiconductor wafer 1 is transferred to the reaction vessel 12 by a handling robot provided in the manufacturing apparatus.
Taken out of The rotating motion of the supporting rotator 6 and the oscillating motion of the oscillating device 31 may be performed in a time-division manner or may be performed simultaneously. Simultaneous processing enables continuous processing. For example, in film formation, a more uniform thin film can be realized. Further, in this embodiment, the plane movement of the processing surface perpendicular to the axis of the reaction gas introduction hole 19 of the gas head 15 uses the rotation of the wafer stage 2 on which the processing surface is mounted. The rotation may be performed by rotating the gas head 15 about a rotation axis parallel to the 19 axis.

Embodiment 2 FIG. FIG. 8 is a sectional view of a partially cut structure of a CVD apparatus according to another embodiment of the present invention. In FIG. 8, reference numeral 21 denotes a rotating device as first driving means.
Reference numeral 70 denotes an oscillating gas head as a second driving means. In the first embodiment, the wafer stage performs the plane motion by the rotating device and the oscillating motion by the oscillating device with respect to the facing gas head, but in the second embodiment, the wafer stage uses the facing gas head. In this case, only a rotation for performing a plane motion is performed, and the oscillating motion is performed by a gas head. By adopting such a configuration, the driving mechanisms for the rotational motion and the oscillating motion can be separately provided, so that the configuration is simplified.

In the following description of the embodiment, the same reference numerals as those in the first embodiment denote the same or corresponding parts. FIG. 9 is a sectional structural view of the supporting rotator 6 constituting the rotating device 21. In FIG. 9, reference numeral 60 denotes a connection shaft, 61 denotes a connection shaft support, and 62 denotes a connection flange. The wafer stage 2 is integrally fixed to the connection shaft support 61 via a support post 41 and a connection flange 62 on the back surface. Connecting shaft support 6
1 and the supporting rotating body 6 are integrally fixed to the connecting shaft 60 by keying. Accordingly, the wafer stage 2 is integrally connected to the supporting rotator 6 via the respective members, and when the supporting rotator 6 is rotated by the electric motor 9, the wafer stage 2 also rotates.

In the oscillating gas head 70, an oscillating shaft 71 for oscillating the gas head 15 is supported by the reaction vessel 12 by a bearing 72. One end of the swing shaft 71 is slidable through a vacuum seal 73, for example, a mechanical seal or a vacuum seal using a magnetic fluid.
And is connected to the electric motor 74 via the speed reducer 76. By rotating the electric motor 74 forward and backward, the gas head 15 is swung.

The gas head 15 is connected to the reaction vessel 12 via a flexible tubular body such as a bellows 75,
While allowing the gas head 15 to swing, the reaction chamber 1
4 and the mixing chamber 18 are separated. Since such a configuration is adopted, the semiconductor wafer 1 mounted on the wafer stage 2 only performs a plane motion by the rotation of the wafer stage 2. The gas head 15 is swung by forward and reverse rotation of the electric motor 74. The reaction gas supplied from the gas head 15 reaches the surface to be processed of the wafer at an inclination angle as the gas head 15 swings. For example, in the case of trench film formation, the side wall of the trench has a reaction gas introduction hole. 1
While having an inclination angle with the axis 9, the chance of being exposed to the reaction gas introduced from the reaction gas introduction hole 19 is increased. Therefore, the same effect as that of the first embodiment is obtained.

When the driving mechanism for the rotational motion and the driving mechanism for the oscillating motion are separated as in the second embodiment, the rotational motion is adjusted so that the angle of the reaction gas impinging on the wafer is not the same at a certain position of the wafer. It is necessary to select the period of the swing motion and the rotation motion so that the rotation motion and the swing motion are not synchronized.

Embodiment 3 FIG. FIG. 10 is a sectional view of a partially cut structure of a CVD apparatus according to another embodiment of the present invention. In the third embodiment, the distance between the wafer stage and the gas head can be adjusted in the case of the first embodiment in which the wafer stage performs the rotational motion and the oscillating motion for performing the planar motion with respect to the opposed gas head. For example, a gas head height adjusting unit 80 is provided.

In FIG. 10, reference numeral 80 denotes a gas head height adjusting unit. The gas head 15 has a plurality of gas head supports 8.
1 and is integrally connected via a gas head support 81 to a ventilation flange 83 having a number of ventilation holes 82. The ventilation flange 83 supports the ventilation flange support 8.
The airtight flange 85 is integrally connected to the linear drive shaft 87 connected to a linear drive mechanism 86 as a parallel movement mechanism. The linear motion shaft 87 is connected to the reaction vessel 12 by a linear motion bearing 88.
It is supported by.

The gas head 15 and the reaction vessel 12 are connected by a bellows 89 so that the gas head 15 can be adjusted and the mixing chamber 18 and the reaction chamber 14 are separated. Further, the airtight flange 85 is connected to the reaction container 12 by a bellows 90 to maintain the airtightness of the reaction container 12. With the gas head height adjusting section 80 having such a configuration, the distance between the wafer stage 2 and the gas head 15 can be adjusted by driving the linear drive mechanism 86, and the reaction vessel 12 is sealed. The setting and change of the processing conditions can be performed in a short time and appropriately while maintaining the above conditions. In this embodiment, in order to adjust the distance between the wafer stage 2 and the gas head 15, the gas head 15 is moved by disposing the gas head height adjusting section 80.
Instead of moving the gas head 15 , a linear drive mechanism may be provided on the wafer stage 2 to adjust the distance between the wafer stage 2 and the gas head 15.

In the above description, mainly the case of the low pressure chemical vapor deposition apparatus and the low pressure chemical vapor deposition method has been described. It may be used for an apparatus and a chemical vapor deposition method.

[0044]

As described above, in the chemical vapor deposition apparatus according to the present invention, the supporting means or the reactive gas introducing means is driven so that the workpiece and the reactive gas introducing means move in a plane while facing each other. 1 driving means, and second driving means for driving the supporting means or the reactive gas introducing means so that the surface to be processed of the workpiece and the reactive gas introducing means face each other while swinging each other. Therefore, the processing surface of the workpiece can be inclined with respect to the reaction gas introducing means, so that the reaction gas can easily reach the deep uneven side walls of the processing surface, and is smooth including the side walls and the bottom. Uniform processing can be performed.

Further, since the first driving means for driving the support means or the reactive gas introducing means is a rotating device for rotating the supporting means or the reactive gas introducing means, continuous planar movement of the workpiece can be easily realized. It is possible to construct a simple and effective device. In addition, since the reaction chamber is provided with a decompression means, the reaction gas can easily reach the deep uneven side wall of the surface to be processed in the low pressure chemical vapor deposition apparatus, and smooth and uniform processing including the side wall and the bottom can be performed. Can be. Further, since the reaction gas introduction means is a gas head having a plurality of reaction gas introduction holes, the reaction gas is rectified and hits the workpiece, thereby promoting uniform processing.

Further, since the supporting means or the reactive gas introducing means or the supporting table or the gas head is provided through the parallel moving mechanism, the distance between the supporting means and the reactive gas introducing means or the distance between the supporting table and the gas head can be adjusted. In addition, setting and changing of processing conditions are facilitated while the reaction vessel 12 is kept in a closed state, and the setup time for performing smooth and uniform processing including the side walls and the bottom of the irregularities on the surface to be processed can be shortened, and the processing efficiency can be reduced. improves.

Further, in the chemical vapor deposition method according to the present invention, the step of causing the workpiece and the above-mentioned reaction gas introducing means to move in a plane while facing each other, and the step of making the processing surface of the workpiece face the reaction gas introducing means. Swinging the surface to be processed and the reaction gas introducing means with respect to each other, so that the surface to be processed of the workpiece is inclined with respect to the reaction gas introducing means, and the side wall portion having deep unevenness on the surface to be processed is provided. Thus, the reaction gas can easily reach the surface, and smooth and uniform processing including the side wall and the bottom can be performed.

Further, since the step of moving the plane is the step of moving the plane by rotating the support means, the plane movement is continuous and the processing becomes uniform. Further, since the gas head is used as the reaction gas introduction means, the flow direction of the reaction gas can be easily adjusted. Also, since the step of moving the plane and the step of swinging are performed simultaneously, the processing can be performed continuously, and the processing becomes more uniform. In addition, since a step of reducing the pressure in the reaction chamber is provided, processing becomes more uniform. In addition, since the process for adjusting the distance between the surface to be processed and the reaction gas introduction hole is provided according to the processing conditions, the optimum processing conditions can be set and changed in a short time, the setup time can be reduced, and the processing efficiency can be reduced. improves.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a partially broken structure of an embodiment of a CVD apparatus according to the present invention.

FIG. 2 is a cross-sectional view of a partially broken structure of a rocking device of a CVD device according to the present invention.

FIG. 3 is a plan view of a swing driven portion of the CVD apparatus according to the present invention.

FIG. 4 is a structural sectional view taken along the line IV-IV of FIG. 3 showing a swing driven portion of the CVD apparatus according to the present invention.

FIG. 5 is a plan view of a wafer stage and a heater of the CVD apparatus according to the present invention.

6 is a structural sectional view taken along the line VI-VI of FIG. 5 showing a wafer stage and a heater of the CVD apparatus according to the present invention.

FIG. 7 is a plan view of a gas head of the CVD apparatus according to the present invention.

FIG. 8 is a partially cutaway sectional view of a CVD apparatus according to another embodiment of the present invention.

FIG. 9 is a sectional structural view of a supporting rotary member 6 of a CVD apparatus according to another embodiment of the present invention.

FIG. 10 is a partially cutaway sectional view of a CVD apparatus according to another embodiment of the present invention.

FIG. 11 is a structural sectional view of a conventional CVD apparatus.

[Explanation of symbols]

 2 Wafer Stage 14 Reaction Chamber 15 Gas Head 20 Exhaust Port 21 Rotating Device 23 Vacuum Device 31 Swinging Device 70 Swinging Gas Head Unit 80 Gas Head Height Adjusting Unit

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-207865 (JP, A) JP-A-47-477 (JP, A) JP-A-5-226252 (JP, A) JP-A-3-207 287771 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 H01L 21/31

Claims (11)

(57) [Claims] 1. A reaction chamber, which is disposed in a reaction chamber that can be sealed from the outside,
A reaction gas introduction unit that supplies a reaction gas to the reaction chamber; an exhaust unit that is arranged in the reaction chamber; and a discharge surface that is arranged in the reaction chamber. A supporting means mounted so as to face and heat the workpiece; and the supporting means such that the workpiece mounted on the supporting means and the reactive gas introducing means move in a plane while facing each other. Alternatively, a first driving means for driving the reaction gas introducing means is provided.
Driving means, and driving the supporting means or the reactive gas introducing means such that the processing surface of the workpiece mounted on the supporting means and the reactive gas introducing means swing mutually while facing each other. And a second driving unit for performing the chemical vapor deposition. 2. The apparatus according to claim 1, wherein said first driving means for driving said support means or said reaction gas introduction means is a rotating device for rotating said support means or said reaction gas introduction means. Chemical vapor deposition equipment. 3. The chemical vapor deposition apparatus according to claim 1, further comprising a pressure reducing means in said reaction chamber. 4. It is provided in a reaction chamber that can be sealed from the outside,
A gas head for rectifying the reaction gas pressurized from the plurality of reaction gas introduction holes and supplying the rectified reaction gas to the reaction chamber; an exhaust port disposed in the reaction chamber and exhausted by an exhaust device provided with a decompression device; A support table which is provided in the reaction chamber and has a heater for heating the workpiece while mounting the workpiece so that the surface to be processed faces the gas head; and the workpiece mounted on the support table. A rotating device that rotates the support base or the gas head so that the workpiece and the gas head face each other and move in a plane while facing each other, so as to mutually cut the axial direction of the reaction gas introduction hole; As the work surface of the work and the reaction gas introduction hole attached to each other are swung while facing each other,
A chemical vapor deposition apparatus comprising: a rocking device that rocks the support table or the gas head. 5. The support means or the reaction gas introduction means via a parallel moving mechanism such that the distance between the support means and the reaction gas introduction means or the distance between the support base and the gas head can be adjusted. The said support stand or the said gas head was arrange | positioned, The claim 1 characterized by the above-mentioned.
The chemical vapor deposition apparatus according to claim 4. 6. A step of mounting a workpiece in a reaction chamber having a reaction gas introduction means and a support means for the workpiece so that the reaction gas introduction means and the processing surface face each other; A step of heating the object; a step of causing the workpiece mounted on the support means and the reactive gas introducing means to move in a plane with each other; and a processing surface of the workpiece mounted on the support means. And a step of causing the surface to be processed and the reaction gas introduction unit to swing mutually while facing the reaction gas introduction unit. 7. The chemical vapor deposition method according to claim 6, wherein the step of moving the plane is a step of moving the plane by rotating the support means. 8. A step of mounting a workpiece such that the gas head and a processing surface of the workpiece face each other in a reaction chamber having a gas head and a support base on which the workpiece is mounted; A step of heating the workpiece, a step of rotating the support or the gas head while causing the workpiece mounted on the support and the gas head to face each other, and causing the gas head to move in a plane with each other; A step of causing the surface to be processed and the gas head to oscillate with each other while causing the surface of the workpiece to be processed to face the gas head. 9. The chemical vapor deposition method according to claim 6, wherein the step of moving in a plane and the step of oscillating are performed simultaneously. 10. The chemical vapor deposition method according to claim 6, further comprising a step of depressurizing the reaction chamber. 11. The chemical vapor deposition method according to claim 6, further comprising a step of adjusting a distance between the surface to be processed and the reaction gas introduction hole in accordance with processing conditions.